C | CHEMISTRY; METALLURGY | |||||||||||||||||||||
Note(s)
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METALLURGY | ||||||||||||||||||||||
C30 | CRYSTAL GROWTH (separation by crystallisation in general B01D 9/00) [3] | |||||||||||||||||||||
C30B | SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR [3] | |||||||||||||||||||||
Note(s)
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Single-crystal growth from solids or gels [3] | ||||||||||||||||||||||
C30B 1/00 | Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3] | |||||||||||||||||||||
C30B 1/02 | • by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) [3] | |||||||||||||||||||||
C30B 1/04 | • • Isothermal recrystallisation [3] | |||||||||||||||||||||
C30B 1/06 | • • Recrystallisation under a temperature gradient [3] | |||||||||||||||||||||
C30B 1/08 | • • • Zone recrystallisation [3] | |||||||||||||||||||||
C30B 1/10 | • by solid state reactions or multi-phase diffusion [3] | |||||||||||||||||||||
C30B 1/12 | • by pressure treatment during the growth [3] | |||||||||||||||||||||
C30B 3/00 | Unidirectional demixing of eutectoid materials [3] | |||||||||||||||||||||
C30B 5/00 | Single-crystal growth from gels (under a protective fluid C30B 27/00) [3] | |||||||||||||||||||||
C30B 5/02 | • with addition of doping materials [3] | |||||||||||||||||||||
Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [3] | ||||||||||||||||||||||
C30B 7/00 | Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3] | |||||||||||||||||||||
C30B 7/02 | • by evaporation of the solvent [3] | |||||||||||||||||||||
C30B 7/04 | • • using aqueous solvents [3] | |||||||||||||||||||||
C30B 7/06 | • • using non-aqueous solvents [3] | |||||||||||||||||||||
C30B 7/08 | • by cooling of the solution [3] | |||||||||||||||||||||
C30B 7/10 | • by application of pressure, e.g. hydrothermal processes [3] | |||||||||||||||||||||
C30B 7/12 | • by electrolysis [3] | |||||||||||||||||||||
C30B 7/14 | • the crystallising materials being formed by chemical reactions in the solution [3] | |||||||||||||||||||||
C30B 9/00 | Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3] | |||||||||||||||||||||
C30B 9/02 | • by evaporation of the molten solvent [3] | |||||||||||||||||||||
C30B 9/04 | • by cooling of the solution [3] | |||||||||||||||||||||
C30B 9/06 | • • using as solvent a component of the crystal composition [3] | |||||||||||||||||||||
C30B 9/08 | • • using other solvents [3] | |||||||||||||||||||||
C30B 9/10 | • • • Metal solvents [3] | |||||||||||||||||||||
C30B 9/12 | • • • Salt solvents, e.g. flux growth [3] | |||||||||||||||||||||
C30B 9/14 | • by electrolysis [3] | |||||||||||||||||||||
C30B 11/00 | Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3] | |||||||||||||||||||||
C30B 11/02 | • without using solvents (C30B 11/06 takes precedence) [3] | |||||||||||||||||||||
C30B 11/04 | • adding crystallising materials or reactants forming it in situ to the melt [3] | |||||||||||||||||||||
C30B 11/06 | • • at least one but not all components of the crystal composition being added [3] | |||||||||||||||||||||
C30B 11/08 | • • every component of the crystal composition being added during the crystallisation [3] | |||||||||||||||||||||
C30B 11/10 | • • • Solid or liquid components, e.g. Verneuil method [3] | |||||||||||||||||||||
C30B 11/12 | • • • Vaporous components, e.g. vapour-liquid-solid-growth [3] | |||||||||||||||||||||
C30B 11/14 | • characterised by the seed, e.g. its crystallographic orientation [3] | |||||||||||||||||||||
C30B 13/00 | Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) [5] | |||||||||||||||||||||
C30B 13/02 | • Zone-melting with a solvent, e.g. travelling solvent process [3] | |||||||||||||||||||||
C30B 13/04 | • Homogenisation by zone-levelling [3] | |||||||||||||||||||||
C30B 13/06 | • the molten zone not extending over the whole cross-section [3] | |||||||||||||||||||||
C30B 13/08 | • adding crystallising materials or reactants forming it in situ to the molten zone [3] | |||||||||||||||||||||
C30B 13/10 | • • with addition of doping materials [3] | |||||||||||||||||||||
C30B 13/12 | • • • in the gaseous or vapour state [3] | |||||||||||||||||||||
C30B 13/14 | • Crucibles or vessels [3] | |||||||||||||||||||||
C30B 13/16 | • Heating of the molten zone [3] | |||||||||||||||||||||
C30B 13/18 | • • the heating element being in contact with, or immersed in, the molten zone [3] | |||||||||||||||||||||
C30B 13/20 | • • by induction, e.g. hot wire technique (C30B 13/18 takes precedence) [3] | |||||||||||||||||||||
C30B 13/22 | • • by irradiation or electric discharge [3] | |||||||||||||||||||||
C30B 13/24 | • • • using electromagnetic waves [3] | |||||||||||||||||||||
C30B 13/26 | • Stirring of the molten zone [3] | |||||||||||||||||||||
C30B 13/28 | • Controlling or regulating [3] | |||||||||||||||||||||
C30B 13/30 | • • Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3] | |||||||||||||||||||||
C30B 13/32 | • Mechanisms for moving either the charge or the heater [3] | |||||||||||||||||||||
C30B 13/34 | • characterised by the seed, e.g. by its crystallographic orientation [3] | |||||||||||||||||||||
C30B 15/00 | Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3] | |||||||||||||||||||||
C30B 15/02 | • adding crystallising materials or reactants forming it in situ to the melt [3] | |||||||||||||||||||||
C30B 15/04 | • • adding doping materials, e.g. for n–p-junction [3] | |||||||||||||||||||||
C30B 15/06 | • Non-vertical pulling [3] | |||||||||||||||||||||
C30B 15/08 | • Downward pulling [3] | |||||||||||||||||||||
C30B 15/10 | • Crucibles or containers for supporting the melt [3] | |||||||||||||||||||||
C30B 15/12 | • • Double crucible methods [3] | |||||||||||||||||||||
C30B 15/14 | • Heating of the melt or the crystallised materials [3] | |||||||||||||||||||||
C30B 15/16 | • • by irradiation or electric discharge [3] | |||||||||||||||||||||
C30B 15/18 | • • using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3] | |||||||||||||||||||||
C30B 15/20 | • Controlling or regulating (controlling or regulating in general G05) [3] | |||||||||||||||||||||
C30B 15/22 | • • Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3] | |||||||||||||||||||||
C30B 15/24 | • • • using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [3] | |||||||||||||||||||||
C30B 15/26 | • • • using television detectors; using photo or X-ray detectors [3] | |||||||||||||||||||||
C30B 15/28 | • • • using weight changes of the crystal or the melt, e.g. flotation methods [3] | |||||||||||||||||||||
C30B 15/30 | • Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [3] | |||||||||||||||||||||
C30B 15/32 | • Seed holders, e.g. chucks [3] | |||||||||||||||||||||
C30B 15/34 | • Edge-defined film-fed crystal growth using dies or slits [3] | |||||||||||||||||||||
C30B 15/36 | • characterised by the seed, e.g. its crystallographic orientation [3] | |||||||||||||||||||||
C30B 17/00 | Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3] | |||||||||||||||||||||
C30B 19/00 | Liquid-phase epitaxial-layer growth [3] | |||||||||||||||||||||
C30B 19/02 | • using molten solvents, e.g. flux [3] | |||||||||||||||||||||
C30B 19/04 | • • the solvent being a component of the crystal composition [3] | |||||||||||||||||||||
C30B 19/06 | • Reaction chambers; Boats for supporting the melt; Substrate holders [3] | |||||||||||||||||||||
C30B 19/08 | • Heating of the reaction chamber or the substrate [3] | |||||||||||||||||||||
C30B 19/10 | • Controlling or regulating (controlling or regulating in general G05) [3] | |||||||||||||||||||||
C30B 19/12 | • characterised by the substrate [3] | |||||||||||||||||||||
C30B 21/00 | Unidirectional solidification of eutectic materials [3] | |||||||||||||||||||||
C30B 21/02 | • by normal casting or gradient freezing [3] | |||||||||||||||||||||
C30B 21/04 | • by zone-melting [3] | |||||||||||||||||||||
C30B 21/06 | • by pulling from a melt [3] | |||||||||||||||||||||
Single-crystal growth from vapours [3] | ||||||||||||||||||||||
C30B 23/00 | Single-crystal growth by condensing evaporated or sublimed materials [3] | |||||||||||||||||||||
C30B 23/02 | • Epitaxial-layer growth [3] | |||||||||||||||||||||
C30B 23/04 | • • Pattern deposit, e.g. by using masks [3] | |||||||||||||||||||||
C30B 23/06 | • • Heating of the deposition chamber, the substrate, or the materials to be evaporated [3] | |||||||||||||||||||||
C30B 23/08 | • • by condensing ionised vapours (by reactive sputtering C30B 25/06) [3] | |||||||||||||||||||||
C30B 25/00 | Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth [3] | |||||||||||||||||||||
C30B 25/02 | • Epitaxial-layer growth [3] | |||||||||||||||||||||
C30B 25/04 | • • Pattern deposit, e.g. by using masks [3] | |||||||||||||||||||||
C30B 25/06 | • • by reactive sputtering [3] | |||||||||||||||||||||
C30B 25/08 | • • Reaction chambers; Selection of materials therefor [3] | |||||||||||||||||||||
C30B 25/10 | • • Heating of the reaction chamber or the substrate [3] | |||||||||||||||||||||
C30B 25/12 | • • Substrate holders or susceptors [3] | |||||||||||||||||||||
C30B 25/14 | • • Feed and outlet means for the gases; Modifying the flow of the reactive gases [3] | |||||||||||||||||||||
C30B 25/16 | • • Controlling or regulating (controlling or regulating in general G05) [3] | |||||||||||||||||||||
C30B 25/18 | • • characterised by the substrate [3] | |||||||||||||||||||||
C30B 25/20 | • • • the substrate being of the same materials as the epitaxial layer [3] | |||||||||||||||||||||
C30B 25/22 | • • Sandwich processes [3] | |||||||||||||||||||||
C30B 27/00 | Single-crystal growth under a protective fluid [3] | |||||||||||||||||||||
C30B 27/02 | • by pulling from a melt [3] | |||||||||||||||||||||
C30B 28/00 | Production of homogeneous polycrystalline material with defined structure [5] | |||||||||||||||||||||
C30B 28/02 | • directly from the solid state [5] | |||||||||||||||||||||
C30B 28/04 | • from liquids [5] | |||||||||||||||||||||
C30B 28/06 | • • by normal freezing or freezing under temperature gradient [5] | |||||||||||||||||||||
C30B 28/08 | • • by zone-melting [5] | |||||||||||||||||||||
C30B 28/10 | • • by pulling from a melt [5] | |||||||||||||||||||||
C30B 28/12 | • directly from the gas state [5] | |||||||||||||||||||||
C30B 28/14 | • • by chemical reaction of reactive gases [5] | |||||||||||||||||||||
C30B 29/00 | Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape [5] | |||||||||||||||||||||
Note(s)
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C30B 29/02 | • Elements [3] | |||||||||||||||||||||
C30B 29/04 | • • Diamond [3] | |||||||||||||||||||||
C30B 29/06 | • • Silicon [3] | |||||||||||||||||||||
C30B 29/08 | • • Germanium [3] | |||||||||||||||||||||
C30B 29/10 | • Inorganic compounds or compositions [3] | |||||||||||||||||||||
C30B 29/12 | • • Halides [3] | |||||||||||||||||||||
C30B 29/14 | • • Phosphates [3] | |||||||||||||||||||||
C30B 29/16 | • • Oxides [3] | |||||||||||||||||||||
C30B 29/18 | • • • Quartz [3] | |||||||||||||||||||||
C30B 29/20 | • • • Aluminium oxides [3] | |||||||||||||||||||||
C30B 29/22 | • • • Complex oxides [3] | |||||||||||||||||||||
C30B 29/24 | • • • • with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3] | |||||||||||||||||||||
C30B 29/26 | • • • • with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3] | |||||||||||||||||||||
C30B 29/28 | • • • • with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3] | |||||||||||||||||||||
C30B 29/30 | • • • • Niobates; Vanadates; Tantalates [3] | |||||||||||||||||||||
C30B 29/32 | • • • • Titanates; Germanates; Molybdates; Tungstates [3] | |||||||||||||||||||||
C30B 29/34 | • • Silicates [3] | |||||||||||||||||||||
C30B 29/36 | • • Carbides [3] | |||||||||||||||||||||
C30B 29/38 | • • Nitrides [3] | |||||||||||||||||||||
C30B 29/40 | • • AIIIBV compounds [3] | |||||||||||||||||||||
C30B 29/42 | • • • Gallium arsenide [3] | |||||||||||||||||||||
C30B 29/44 | • • • Gallium phosphide [3] | |||||||||||||||||||||
C30B 29/46 | • • Sulfur-, selenium- or tellurium-containing compounds [3] | |||||||||||||||||||||
C30B 29/48 | • • • AIIBVI compounds [3] | |||||||||||||||||||||
C30B 29/50 | • • • • Cadmium sulfide [3] | |||||||||||||||||||||
C30B 29/52 | • • Alloys [3] | |||||||||||||||||||||
C30B 29/54 | • Organic compounds [3] | |||||||||||||||||||||
C30B 29/56 | • • Tartrates [3] | |||||||||||||||||||||
C30B 29/58 | • • Macromolecular compounds [3] | |||||||||||||||||||||
C30B 29/60 | • characterised by shape [3] | |||||||||||||||||||||
C30B 29/62 | • • Whiskers or needles [3] | |||||||||||||||||||||
C30B 29/64 | • • Flat crystals, e.g. plates, strips, disks [5] | |||||||||||||||||||||
C30B 29/66 | • • Crystals of complex geometrical shape, e.g. tubes, cylinders [5] | |||||||||||||||||||||
C30B 29/68 | • • Crystals with laminate structure, e.g. "superlattices" [5] | |||||||||||||||||||||
C30B 30/00 | Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5] | |||||||||||||||||||||
Note(s)
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C30B 30/02 | • using electric fields, e.g. electrolysis [5] | |||||||||||||||||||||
C30B 30/04 | • using magnetic fields [5] | |||||||||||||||||||||
C30B 30/06 | • using mechanical vibrations [5] | |||||||||||||||||||||
C30B 30/08 | • in conditions of zero-gravity or low gravity [5] | |||||||||||||||||||||
After-treatment of single crystals or homogeneous polycrystalline material with defined structure [5] | ||||||||||||||||||||||
C30B 31/00 | Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [5] | |||||||||||||||||||||
C30B 31/02 | • by contacting with diffusion materials in the solid state [3] | |||||||||||||||||||||
C30B 31/04 | • by contacting with diffusion materials in the liquid state [3] | |||||||||||||||||||||
C30B 31/06 | • by contacting with diffusion material in the gaseous state (C30B 31/18 takes precedence) [3] | |||||||||||||||||||||
C30B 31/08 | • • the diffusion materials being a compound of the elements to be diffused [3] | |||||||||||||||||||||
C30B 31/10 | • • Reaction chambers; Selection of materials therefor [3] | |||||||||||||||||||||
C30B 31/12 | • • Heating of the reaction chamber [3] | |||||||||||||||||||||
C30B 31/14 | • • Substrate holders or susceptors [3] | |||||||||||||||||||||
C30B 31/16 | • • Feed and outlet means for the gases; Modifying the flow of the gases [3] | |||||||||||||||||||||
C30B 31/18 | • • Controlling or regulating [3] | |||||||||||||||||||||
C30B 31/20 | • Doping by irradiation with electromagnetic waves or by particle radiation [3] | |||||||||||||||||||||
C30B 31/22 | • • by ion-implantation [3] | |||||||||||||||||||||
C30B 33/00 | After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence) [5] | |||||||||||||||||||||
C30B 33/02 | • Heat treatment (C30B 33/04, C30B 33/06 take precedence) [5] | |||||||||||||||||||||
C30B 33/04 | • using electric or magnetic fields or particle radiation [5] | |||||||||||||||||||||
C30B 33/06 | • Joining of crystals [5] | |||||||||||||||||||||
C30B 33/08 | • Etching [5] | |||||||||||||||||||||
C30B 33/10 | • • in solutions or melts [5] | |||||||||||||||||||||
C30B 33/12 | • • in gas atmosphere or plasma [5] | |||||||||||||||||||||
C30B 35/00 | Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure [5] |