|  | G |
SECTION G — PHYSICS

|  | G |
Note(s) In this section, the following term is used with the meaning indicated: "variable" (as a noun) means a feature or property (e.g., a dimension, a physical condition such as temperature, a quality such as density or colour) which, in respect of a particular entity (e.g., an object, a quantity of a substance, a beam of light) and at a particular instant, is capable of being measured; the variable may change, so that its numerical expression may assume different values at different times, in different conditions or in individual cases, but may be constant in respect of a particular entity in certain conditions or for practical purposes (e.g., the length of a bar may be regarded as constant for many purposes). Attention is drawn to the definitions of terms or expressions used, appearing in the notes of several of the classes in this section, in particular those of "measuring" in class Fulltext... Hierarchy... Expanded...G01 and "control" and "regulation" in class Fulltext... Hierarchy... Expanded...G05. Classification in this section may present more difficulty than in other sections, because the distinction between different fields of use rests to a considerable extent on differences in the intention of the user rather than on any constructional differences or differences in the manner of use, and because the subjects dealt with are often in effect systems or combinations, which have features or parts in common, rather than "things", which are readily distinguishable as a whole. For example, information (e.g., a set of figures) may be displayed for the purpose of education or advertising (Fulltext... Hierarchy... Expanded...G09), for enabling the result of a measurement to be known (Fulltext... Hierarchy... Expanded...G01), for signalling the information to a distant point or for giving information which has been signalled from a distant point (Fulltext... Hierarchy... Expanded...G08). The words used to describe the purpose depend on features that may be irrelevant to the form of the apparatus concerned, for example, such features as the desired effect on the person who sees the display, or whether the display is controlled from a remote point. Again, a device which responds to some change in a condition, e.g., in the pressure of a fluid, may be used, without modification of the device itself, to give information about the pressure (Fulltext... Hierarchy... Expanded...G01L) or about some other condition linked to the pressure (another subclass of class Fulltext... Hierarchy... Expanded...G01, e.g., Fulltext... Hierarchy... Expanded...G01K for temperature), to make a record of the pressure or of its occurrence (Fulltext... Hierarchy... Expanded...G07C), to give an alarm (Fulltext... Hierarchy... Expanded...G08B), or to control another apparatus (Fulltext... Hierarchy... Expanded...G05). The classification scheme is intended to enable things of a similar nature (as indicated above) to be classified together. It is therefore particularly necessary for the real nature of any technical subject to be decided before it can be properly classified.

INSTRUMENTS

|  | G11 |
INFORMATION STORAGE

|  | G11C |
STATIC STORES (information storage based on relative movement between record carrier and transducer Fulltext... Hierarchy... Expanded...G11B; semiconductor devices for storage Fulltext... Hierarchy... Expanded...H01L, e.g. Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 27/108-H01L 27/115; pulse technique in general Fulltext... Hierarchy... Expanded...H03K, e.g. electronic switches Fulltext... Hierarchy... Expanded...H03K 17/00)

|  | G11C |
Note(s) This subclass covers devices or arrangements for storage of digital or analogue information: in which no relative movement takes place between an information storage element and a transducer; which incorporate a selecting-device for writing-in or reading-out the information into or from the store. This subclass does not cover elements not adapted for storage and not provided with such means as referred to in Note (3) below, which elements are classified in the appropriate subclass, e.g. of Fulltext... Hierarchy... Expanded...H01, Fulltext... Hierarchy... Expanded...H03K. In this subclass, a storage element is provided with means for writing-in and reading-out at least one item of information.

|  | G11C |
Subclass index
WRITING OR READING INFORMATION | 7/00
ADDRESS SELECTING | 8/00
DIGITAL STORES CHARACTERISED BY THE TYPE OF ELEMENT |
Electric, magnetic types; details thereof | 11/00; 5/00
Mechanical types | 23/00
Fluidic types | 25/00
Other types | 13/00
DIGITAL STORES CHARACTERISED BY BACK-UP MEANS | 14/00
ERASABLE PROGRAMMABLE READ-ONLY MEMORIES | 16/00
DIGITAL STORES CHARACTERISED BY INFORMATION DISPLACEMENT |
Shift; circulation | 19/00; 21/00
STORES CHARACTERISED BY FUNCTION |
Associative; analogue; for reading-out only | 15/00; 27/00; 17/00
CHECKING OF STORES | 29/00

|  | G11C 5/00 |
Details of stores covered by group Fulltext... Hierarchy... Expanded...G11C 11/00

|  | G11C 5/02 |
· | Disposition of storage elements, e.g. in the form of a matrix array

|  | G11C 5/04 |
· · | Supports for storage elements; Mounting or fixing of storage elements on such supports

|  | G11C 5/05 |
· · · | Supporting of cores in matrix [2]

|  | G11C 5/06 |
· | Arrangements for interconnecting storage elements electrically, e.g. by wiring

|  | G11C 5/08 |
· · | for interconnecting magnetic elements, e.g. toroidal cores

|  | G11C 5/10 |
· · | for interconnecting capacitors

|  | G11C 5/12 |
· | Apparatus or processes for interconnecting storage elements, e.g. for threading magnetic cores

|  | G11C 5/14 |
· | Power supply arrangements (in general Fulltext... Hierarchy... Expanded...G05F, Fulltext... Hierarchy... Expanded...H02J, Fulltext... Hierarchy... Expanded...H02M) [5]

|  | G11C 7/00 |
Arrangements for writing information into, or reading information out from, a digital store (Fulltext... Hierarchy... Expanded...G11C 5/00 takes precedence; for stores using transistors Fulltext... Hierarchy... Expanded...G11C 11/407, Fulltext... Hierarchy... Expanded...G11C 11/413) [2,5]

|  | G11C 7/02 |
· | with means for avoiding parasitic signals

|  | G11C 7/04 |
· | with means for avoiding disturbances due to temperature effects

|  | G11C 7/06 |
· | Adaptations of amplifiers (amplifiers per se Fulltext... Hierarchy... Expanded...H03F, Fulltext... Hierarchy... Expanded...H03K)

|  | G11C 8/00 |
Arrangements for selecting an address in a digital store (for stores using transistors Fulltext... Hierarchy... Expanded...G11C 11/407, Fulltext... Hierarchy... Expanded...G11C 11/413) [2,5]

|  | G11C 8/02 |
· | using selecting matrix [2]

|  | G11C 8/04 |
· | using a sequential addressing device, e.g. shift register, counter [5]

|  | G11C 11/00 |
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...G11C 14/00-G11C 21/00 take precedence) [5]

|  | G11C 11/02 - G11C 11/54 |
Note(s) Group Fulltext... Hierarchy... Expanded...G11C 11/56 takes precedence over groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...G11C 11/02-G11C 11/54. [2]

|  | G11C 11/02 |
· | using magnetic elements

|  | G11C 11/04 |
· · | using storage elements having cylindrical form, e.g. rod, wire (Fulltext... Hierarchy... Expanded...G11C 11/12, Fulltext... Hierarchy... Expanded...G11C 11/14 take precedence) [2]

|  | G11C 11/06 |
· · | using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element

|  | G11C 11/061 |
· · · | using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out [2]

|  | G11C 11/063 |
· · · · | bit-organized, such as, 2L/2D-, 3D-organization, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing [2]

|  | G11C 11/065 |
· · · · | word-organized, such as 2D-organization, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading [2]

|  | G11C 11/067 |
· · · | using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out [2]

|  | G11C 11/08 |
· · | using multi-aperture storage elements, e.g. using transfluxors; using plates incorporating several individual multi-aperture storage elements (Fulltext... Hierarchy... Expanded...G11C 11/10 takes precedence; using multi-aperture plates in which each individual aperture forms a storage element Fulltext... Hierarchy... Expanded...G11C 11/06) [2]

|  | G11C 11/10 |
· · | using multi-axial storage elements

|  | G11C 11/12 |
· · | using tensors; using twistors, i.e. elements in which one axis of magnetisation is twisted

|  | G11C 11/14 |
· · | using thin-film elements

|  | G11C 11/15 |
· · · | using multiple magnetic layers (Fulltext... Hierarchy... Expanded...G11C 11/155 takes precedence) [2]

|  | G11C 11/155 |
· · · | with cylindrical configuration [2]

|  | G11C 11/16 |
· · | using elements in which the storage effect is based on magnetic spin effect

|  | G11C 11/18 |
· | using Hall-effect devices

|  | G11C 11/19 |
· | using non-linear reactive devices in resonant circuits [2]

|  | G11C 11/20 |
· · | using parametrons [2]

|  | G11C 11/21 |
· | using electric elements [2]

|  | G11C 11/22 |
· · | using ferroelectric elements [2]

|  | G11C 11/23 |
· · | using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (Fulltext... Hierarchy... Expanded...G11C 11/22 takes precedence) [2]

|  | G11C 11/24 |
· · | using capacitors (Fulltext... Hierarchy... Expanded...G11C 11/22 takes precedence; using a combination of semiconductor devices and capacitors Fulltext... Hierarchy... Expanded...G11C 11/34, e.g. Fulltext... Hierarchy... Expanded...G11C 11/40) [2,5]

|  | G11C 11/26 |
· · | using discharge tubes [2]

|  | G11C 11/28 |
· · · | using gas-filled tubes [2]

|  | G11C 11/30 |
· · · | using vacuum tubes (Fulltext... Hierarchy... Expanded...G11C 11/23 takes precedence) [2]

|  | G11C 11/34 |
· · | using semiconductor devices [2]

|  | G11C 11/36 |
· · · | using diodes, e.g. as threshold elements [2]

|  | G11C 11/38 |
· · · · | using tunnel diodes [2]

|  | G11C 11/39 |
· · · | using thyristors [5]

|  | G11C 11/40 |
· · · | using transistors [2]

|  | G11C 11/401 |
· · · · | forming cells needing refreshing or charge regeneration [5]

|  | G11C 11/402 |
· · · · · | with charge regeneration individual to each memory cell, i.e. internal refresh [5]

|  | G11C 11/403 |
· · · · · | with charge regeneration common to a multiplicity of memory cells, i.e. external refresh [5]

|  | G11C 11/404 |
· · · · · · | with one charge-transfer gate, e.g. MOS transistor, per cell [5]

|  | G11C 11/405 |
· · · · · · | with three charge-transfer gates, e.g. MOS transistors, per cell [5]

|  | G11C 11/406 |
· · · · · | Management or control of the refreshing or charge-regeneration cycles [5]

|  | G11C 11/407 |
· · · · · | Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing, for memory cells of the field-effect type (in general Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...G11C 5/00-G11C 8/00) [5]

|  | G11C 11/408 |
· · · · · · | Address circuits [5]

|  | G11C 11/409 |
· · · · · · | Read-write circuits [5]

|  | G11C 11/41 |
· · · · | forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger [5]

|  | G11C 11/411 |
· · · · · | using bipolar transistors only [5]

|  | G11C 11/412 |
· · · · · | using field-effect transistors only [5]

|  | G11C 11/413 |
· · · · · | Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction (in general Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...G11C 5/00-G11C 8/00) [5]

|  | G11C 11/414 |
· · · · · · | for memory cells of the bipolar type [5]

|  | G11C 11/415 |
· · · · · · · | Address circuits [5]

|  | G11C 11/416 |
· · · · · · · | Read-write circuits [5]

|  | G11C 11/417 |
· · · · · · | for memory cells of the field-effect type [5]

|  | G11C 11/418 |
· · · · · · · | Address circuits [5]

|  | G11C 11/419 |
· · · · · · · | Read-write circuits [5]

|  | G11C 11/42 |
· · | using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

|  | G11C 11/44 |
· · | using super-conductive elements, e.g. cryotron [2]

|  | G11C 11/46 |
· | using thermoplastic elements

|  | G11C 11/48 |
· | using displaceable coupling elements, e.g. ferromagnetic cores, to produce change between different states of mutual or self-inductance

|  | G11C 11/50 |
· | using actuation of electric contacts to store the information (mechanical stores Fulltext... Hierarchy... Expanded...G11C 23/00; switches providing a selected number of consecutive operations of the contacts by a single manual actuation of the operating part Fulltext... Hierarchy... Expanded...H01H 41/00)

|  | G11C 11/52 |
· · | using electromagnetic relays

|  | G11C 11/54 |
· | using elements simulating biological cells, e.g. neuron

|  | G11C 11/56 |
· | using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency (counting arrangements comprising multi-stable elements of this type Fulltext... Hierarchy... Expanded...H03K 25/00, Fulltext... Hierarchy... Expanded...H03K 29/00) [2]

|  | G11C 13/00 |
Digital stores characterised by the use of storage elements not covered by groups Fulltext... Hierarchy... Expanded...G11C 11/00, Fulltext... Hierarchy... Expanded...G11C 23/00, or Fulltext... Hierarchy... Expanded...G11C 25/00

|  | G11C 13/02 |
· | using elements whose operation depends upon chemical change (using electrochemical charge Fulltext... Hierarchy... Expanded...G11C 11/00)

|  | G11C 13/04 |
· | using optical elements

|  | G11C 13/06 |
· · | using magneto-optical elements (magneto-optics in general Fulltext... Hierarchy... Expanded...G02F) [2]

|  | G11C 14/00 |
Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down [5]

|  | G11C 15/00 |
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (in which information is addressed to a specific location Fulltext... Hierarchy... Expanded...G11C 11/00) [2]

|  | G11C 15/02 |
· | using magnetic elements [2]

|  | G11C 15/04 |
· | using semiconductor elements [2]

|  | G11C 15/06 |
· | using cryogenic elements [2]

|  | G11C 16/00 |
Erasable programmable read-only memories (Fulltext... Hierarchy... Expanded...G11C 14/00 takes precedence) [5]

|  | G11C 16/02 |
· | electrically programmable [5]

|  | G11C 16/04 |
· · | using variable threshold transistors, e.g. FAMOS [5]

|  | G11C 16/06 |
· · | Auxiliary circuits, e.g. for writing into memory (in general Fulltext... Hierarchy... Expanded...G11C 7/00) [5]

|  | G11C 17/00 |
Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (erasable programmable read-only memories Fulltext... Hierarchy... Expanded...G11C 16/00; coding, decoding or code conversion, in general Fulltext... Hierarchy... Expanded...H03M) [2,5]

|  | G11C 17/02 |
· | using magnetic or inductive elements (Fulltext... Hierarchy... Expanded...G11C 17/14 takes precedence) [2,5]

|  | G11C 17/04 |
· | using capacitive elements (Fulltext... Hierarchy... Expanded...G11C 17/06, Fulltext... Hierarchy... Expanded...G11C 17/14 take precedence) [2,5]

|  | G11C 17/06 |
· | using diode elements (Fulltext... Hierarchy... Expanded...G11C 17/14 takes precedence) [2,5]

|  | G11C 17/08 |
· | using semiconductor devices, e.g. bipolar elements (Fulltext... Hierarchy... Expanded...G11C 17/06, Fulltext... Hierarchy... Expanded...G11C 17/14 take precedence) [5]

|  | G11C 17/10 |
· · | in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM [5]

|  | G11C 17/12 |
· · · | using field-effect devices [5]

|  | G11C 17/14 |
· | in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM [5]

|  | G11C 17/16 |
· · | using electrically-fusible links [5]

|  | G11C 17/18 |
· · | Auxiliary circuits, e.g. for writing into memory (in general Fulltext... Hierarchy... Expanded...G11C 7/00) [5]

|  | G11C 19/00 |
Digital stores in which the information is moved stepwise, e.g. shift register (counting chains Fulltext... Hierarchy... Expanded...H03K 23/00)

|  | G11C 19/02 |
· | using magnetic elements (Fulltext... Hierarchy... Expanded...G11C 19/14 takes precedence) [2]

|  | G11C 19/04 |
· · | using cores with one aperture or magnetic loop [2]

|  | G11C 19/06 |
· · | using structures with a number of apertures or magnetic loops, e.g. transfluxors [2]

|  | G11C 19/08 |
· · | using thin films in plane structure [2]

|  | G11C 19/10 |
· · | using thin films on rods; with twistors [2]

|  | G11C 19/12 |
· | using non-linear reactive devices in resonant circuits [2]

|  | G11C 19/14 |
· | using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements [2]

|  | G11C 19/18 |
· | using capacitors as main elements of the stages [2]

|  | G11C 19/20 |
· | using discharge tubes (Fulltext... Hierarchy... Expanded...G11C 19/14 takes precedence) [2]

|  | G11C 19/28 |
· | using semiconductor elements (Fulltext... Hierarchy... Expanded...G11C 19/14 takes precedence) [2]

|  | G11C 19/30 |
· | using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled [2]

|  | G11C 19/32 |
· | using super-conductive elements [2]

|  | G11C 21/00 |
Digital stores in which the information circulates (stepwise Fulltext... Hierarchy... Expanded...G11C 19/00)

|  | G11C 21/02 |
· | using electromechanical delay lines, e.g. using a mercury tank

|  | G11C 23/00 |
Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (storing by actuating contacts Fulltext... Hierarchy... Expanded...G11C 11/48)

|  | G11C 25/00 |
Digital stores characterised by the use of flowing media; Storage elements therefor

|  | G11C 27/00 |
Electric analogue stores, e.g. for storing instantaneous values

|  | G11C 27/02 |
· | Sample-and-hold arrangements (Fulltext... Hierarchy... Expanded...G11C 27/04 takes precedence; sampling electrical signals, in general Fulltext... Hierarchy... Expanded...H03K) [2,4]

|  | G11C 27/04 |
· | Shift registers (charge coupled devices per se Fulltext... Hierarchy... Expanded...H01L 29/76) [4]

|  | G11C 29/00 |
Checking stores for correct operation