(WO/2006/113725) OPTICAL TRANSCEIVER INTEGRATABLE WITH SILICON VLSI
- Biblio. Data
- Description
- Claims
- National Phase
- Notices
- Documents
| Latest bibliographic data on file with the International Bureau
| ||||||||||||
| ||||||||||||
| IPC: | G02F 1/017 (2006.01) | |||||||||||
| Applicants: | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 11th Floor, Oakland, California 94607 (US) (All Except US). XIE, Ya-hong [US/US]; (US) (US Only). SHI, Bin [CN/US]; (US) (US Only). | |||||||||||
| Inventors: | XIE, Ya-hong; (US). SHI, Bin; (US). | |||||||||||
| Agent: | O'BANION, John, P.; O'Banion & Ritchey LLP, 400 Capital Mall, Suite 1550, Sacramento, California 95814 (US). | |||||||||||
| Priority Data: |
| |||||||||||
| Title: | OPTICAL TRANSCEIVER INTEGRATABLE WITH SILICON VLSI | |||||||||||
| Abstract: | A modulator for an optical transceiver is disclosed. The modulator has two quarter-wave stack mirrors composed of alternating dielectric layers with an optically absorbing layer sandwiched in between to form the vertical resonant cavity. The optically absorbing layer is made of semiconductor nanocrystals embedded in a dialectic material. The device is configured to operate near the saturation point of the absorption layer. By adjusting the biasing voltage across the absorption layer, the saturation threshold of the semiconductor nanocrystals is altered, resulting in the overall reflectivity of the resonant cavity to vary. The modulator is configured to be fabricated as the extension of the backend process of Si CMOS. | |||||||||||
| Designated States: |
AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW. African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM) European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR) African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). | |||||||||||
| Publication Language: | English (EN) |
| Filing Language: | English (EN) |
