(WO/2008/017143) METHOD OF FABRICATING SEMICONDUCTOR DEVICES ON A GROUP IV SUBSTRATE WITH CONTROLLED INTERFACE PROPERTIES AND DIFFUSION TAILS
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| Latest bibliographic data on file with the International Bureau
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| IPC: | H01L 21/20 (2006.01), H01L 21/3205 (2006.01), H01L 29/12 (2006.01), H01L 31/0256 (2006.01) | ||||||||||||||||||
| Applicants: | CYRIUM TECHNOLOGIES INCORPORATED [CA/CA]; 1200 Montreal Road, M50-IPF316, Ottawa, Ontario K1A 0R6 (CA) (All Except US). PUETZ, Norbert [CA/CA]; (CA) (US Only). FAFARD, Simon [CA/CA]; (CA) (US Only). RIEL, Joseph, René, Bruno [CA/CA]; (CA) (US Only). | ||||||||||||||||||
| Inventors: | PUETZ, Norbert; (CA). FAFARD, Simon; (CA). RIEL, Joseph, René, Bruno; (CA). | ||||||||||||||||||
| Agent: | KINSMAN, L. Anne et al.; Borden Ladner Gervais LLP, World Exchange Plaza, 100 Queen Street, Suite 1100, Ottawa, Ontario K1P 1J9 (CA). | ||||||||||||||||||
| Priority Data: |
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| Title: | METHOD OF FABRICATING SEMICONDUCTOR DEVICES ON A GROUP IV SUBSTRATE WITH CONTROLLED INTERFACE PROPERTIES AND DIFFUSION TAILS | ||||||||||||||||||
| Abstract: | Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element. | ||||||||||||||||||
| Designated States: |
AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM) European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR) African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). | ||||||||||||||||||
| Publication Language: | English (EN) |
| Filing Language: | English (EN) |
