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Search result: 87 of 139 |
(WO/2007/126418) OPTICALLY INTERFACE ELECTRICALLY CONTROLLED DEVICES
- Biblio. Data
- Description
- Claims
- National Phase
- Notices
- Documents
| Latest bibliographic data on file with the International Bureau
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| IPC: | H01L 27/14 (2006.01) | |||||||||||
| Applicants: | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, Oakland, CA 94607-5200 (US) (All Except US). BUTOV, Leonid [RU/US]; (US) (US Only). | |||||||||||
| Inventor: | BUTOV, Leonid; (US). | |||||||||||
| Agent: | FALLON, Steven, P.; Greer, Burns & Crain, Ltd., 300 S. Wacker Drive-Suite 2500, Chicago, IL 60606 (US). | |||||||||||
| Priority Data: |
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| Title: | OPTICALLY INTERFACE ELECTRICALLY CONTROLLED DEVICES | |||||||||||
| Abstract: | Disclosed are devices and methods for localized control and transport of excitons and separate processing of holes and electrons in a device with an optical input and an optical output. An optoelectronic device includes a coupled or wide quantum well structure. A localized gate is arranged over a region of the coupled or wide quantum well structure and a semiconductor barrier layer. A optical Input and optical output are arranged over other regions of the structure that are separated by the gate electrode region. The coupled or wide quantum well structure is dimensioned and formed from materials that creale a nonzero distance d between the separated electron and hole of an exciton formed in response to the input. The flow of excitons or separated electrons and holes between the optical input and optical output can be controlled at the localized gate electrode, optical input, and output gates. | |||||||||||
| Designated States: |
AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM) European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR) African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). | |||||||||||
| Publication Language: | English (EN) |
| Filing Language: | English (EN) |
