Notable inventors: Shuji NAKAMURA

Winner of the 2006 Millennium Technology Prize for his work on light and laser technology.

Shuji NAKAMURA
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Selection of PCT applications:	(WO 06/036446) WHITE, SINGLE OR MULTI-COLOR LIGHT EMITTING DIODES BY RECYCLING GUIDED MODES (WO 05/117152) METHOD FOR FABRICATING GROUP III NITRIDE DEVICES AND DEVICES FABRICATED USING METHOD (WO 05/112138) LIFT-OFF PROCESS FOR GAN FILMS FORMED ON SIC SUBSTRATES AND DEVICES FABRICATED USING METHOD (WO 05/112123) FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION (WO 05/064666) HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING (WO 00/052796) NITRIDE SEMICONDUCTOR LASER ELEMENT (WO 98/031055) NITRIDE SEMICONDUCTOR DEVICE
Links:	The Millennium Technology Prize University of California, Santa Barbara Japanese inventor wins major technology prize (MSNBC) (June 15, 2006) Calif. prof awarded Millennium Tech prize (Yahoo! News, June 15, 2006)

Shuji NAKAMURA

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Selection of PCT applications:

(WO 06/036446) WHITE, SINGLE OR MULTI-COLOR LIGHT EMITTING DIODES BY RECYCLING GUIDED MODES
(WO 05/117152) METHOD FOR FABRICATING GROUP III NITRIDE DEVICES AND DEVICES FABRICATED USING METHOD
(WO 05/112138) LIFT-OFF PROCESS FOR GAN FILMS FORMED ON SIC SUBSTRATES AND DEVICES FABRICATED USING METHOD
(WO 05/112123) FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION
(WO 05/064666) HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
(WO 00/052796) NITRIDE SEMICONDUCTOR LASER ELEMENT
(WO 98/031055) NITRIDE SEMICONDUCTOR DEVICE

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