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Search result: 10 of 128 |
(WO/2006/098868) BIPOLAR JUNCTION TRANSISTOR WITH HIGH BETA
- Biblio. Data
- Description
- Claims
- National Phase
- Notices
- Documents
| Latest bibliographic data on file with the International Bureau
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| IPC: | H01L 29/76 (2006.01), H01L 27/082 (2006.01), H01L 27/095 (2006.01), H01L 29/70 (2006.01) | |||||||||||
| Applicant: | LATTICE SEMICONDUCTOR CORPORATION [US/US]; 5555 Ne Moore Ct, Hillsboro, Oregon 97124 (US) (All Except US). | |||||||||||
| Inventors: | BARTEL, Robert; (US). SMOAK, Richard; (US). AGAM, Moshe; (US). MCDONALD, Adrian; (US). | |||||||||||
| Agent: | BECKER, Mark; Lattice Semiconductor Corporation, 5555 Ne Moore Ct., Hillsboro, Oregon 97124 (US). | |||||||||||
| Priority Data: |
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| Title: | BIPOLAR JUNCTION TRANSISTOR WITH HIGH BETA | |||||||||||
| Abstract: | In one embodiment of the invention, a bipolar junction transistor (BJT) includes an emitter (216A) comprised of a first doped region doped with a first dopant of a first conductivity type. In addition, a salicide block (224) is disposed over a periphery portion (226) of t first doped region, and a suicide (242A) is formed on an exposed portion of the first doped region inside the periphery portion (226). Such a salicide block (224) prevents formation of salicide down to a base region (210A) in turn preventing leakage current through the base for increased of the BJT. | |||||||||||
| Designated States: |
AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW. African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM) European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR) African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). | |||||||||||
| Publication Language: | English (EN) |
| Filing Language: | English (EN) |
