G
SECTION G — PHYSICS
  
INSTRUMENTS
 G11
INFORMATION STORAGE
 G11C
STATIC STORES (information storage based on relative movement between record carrier and transducer G11B; pulse technique in general H03K, e.g. electronic switches H03K 17/00)
 G11C

Note(s)

  1. This subclass covers devices or arrangements for storage of digital or analogue information:
    1. in which no relative movement takes place between an information storage element and a transducer;
    2. which incorporate a selecting-device for writing-in or reading-out the information into or from the store.
  2. This subclass does not cover elements not adapted for storage and not provided with such means as referred to in Note (3) below, which elements are classified in the appropriate subclass, e.g. of H01, H03K.
  3. In this subclass, a storage element is provided with means for writing-in and reading-out at least one item of information.
 G11C 5/00
Details of stores covered by group G11C 11/00
 G11C 5/02
·  Disposition of storage elements, e.g. in the form of a matrix array
 G11C 5/04
·  ·  Supports for storage elements; Mounting or fixing of storage elements on such supports
 G11C 5/05
·  ·  ·  Supporting of cores in matrix  [2]
 G11C 5/06
·  Arrangements for interconnecting storage elements electrically, e.g. by wiring
 G11C 5/08
·  ·  for interconnecting magnetic elements, e.g. toroidal cores
 G11C 5/10
·  ·  for interconnecting capacitors
 G11C 5/12
·  Apparatus or processes for interconnecting storage elements, e.g. for threading magnetic cores
 G11C 7/00
Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00, G11C 11/00 take precedence)  [2]
 G11C 7/02
·  with means for avoiding parasitic signals
 G11C 7/04
·  with means for avoiding disturbances due to temperature effects
 G11C 7/06
·  Adaptations of amplifiers (amplifiers per se H03F, H03K)
 G11C 8/00
Arrangements for selecting an address in a digital store  [2]
 G11C 8/02
·  using selecting matrix  [2]
 G11C 9/00
( transferred to G06F 12/00, G06F 13/00 )
 G11C 11/00
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C 15/00-G11C 21/00 take precedence)
 G11C 11/02 - 
G11C 11/54

Note(s)

Group G11C 11/56 takes precedence over groups G11C 11/02-G11C 11/54[2]

 G11C 11/02
·  using magnetic elements
 G11C 11/04
·  ·  using storage elements having cylindrical form, e.g. rod, wire (G11C 11/12, G11C 11/14 take precedence)  [2]
 G11C 11/06
·  ·  using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
 G11C 11/061
·  ·  ·  using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out  [2]
 G11C 11/063
·  ·  ·  ·  bit-organised, such as, 2L/2D-, 3D-organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing  [2]
 G11C 11/065
·  ·  ·  ·  word-organised, such as 2D-organisation, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading  [2]
 G11C 11/067
·  ·  ·  using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out  [2]
 G11C 11/08
·  ·  using multi-aperture storage elements, e.g. using transfluxors; using plates incorporating several individual multi-aperture storage elements (G11C 11/10 takes precedence; using multi-aperture plates in which each individual aperture forms a storage element G11C 11/06)  [2]
 G11C 11/10
·  ·  using multi-axial storage elements
 G11C 11/12
·  ·  using tensors; using twistors, i.e. elements in which one axis of magnetisation is twisted
 G11C 11/14
·  ·  using thin-film elements
 G11C 11/15
·  ·  ·  using multiple magnetic layers (G11C 11/155 takes precedence)  [2]
 G11C 11/155
·  ·  ·  with cylindrical configuration  [2]
 G11C 11/16
·  ·  using elements in which the storage effect is based on magnetic spin effect
 G11C 11/18
·  using Hall-effect devices
 G11C 11/19
·  using non-linear reactive devices in resonant circuits  [2]
 G11C 11/20
·  ·  using parametrons  [2]
 G11C 11/21
·  using electric elements  [2]
 G11C 11/22
·  ·  using ferroelectric elements  [2]
 G11C 11/23
·  ·  using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (G11C 11/22 takes precedence)  [2]
 G11C 11/24
·  ·  using capacitors (G11C 11/22 takes precedence)  [2]
 G11C 11/26
·  ·  using discharge tubes  [2]
 G11C 11/28
·  ·  ·  using gas-filled tubes  [2]
 G11C 11/30
·  ·  ·  using vacuum tubes (G11C 11/23 takes precedence)  [2]
 G11C 11/34
·  ·  using semiconductor devices  [2]
 G11C 11/36
·  ·  ·  using diodes, e.g. as threshold elements  [2]
 G11C 11/38
·  ·  ·  ·  using tunnel diodes  [2]
 G11C 11/40
·  ·  ·  using transistors  [2]
 G11C 11/42
·  ·  using electro-optical elements  [2]
 G11C 11/44
·  ·  using super-conductive elements, e.g. cryotron  [2]
 G11C 11/46
·  using thermoplastic elements
 G11C 11/48
·  using displaceable coupling elements, e.g. ferromagnetic cores, to produce change between different states of mutual or self-inductance
 G11C 11/50
·  using actuation of electric contacts to store the information (mechanical stores G11C 23/00; switches providing a selected number of consecutive operations of the contacts by a single manual actuation of the operating part H01H 41/00)
 G11C 11/52
·  ·  using electromagnetic relays
 G11C 11/54
·  using elements simulating biological cells, e.g. neuron
 G11C 11/56
·  Storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency (counting arrangements comprising multi-stable elements of this type H03K 25/00, H03K 29/00)  [2]
 G11C 13/00
Digital stores characterised by the use of storage elements not covered by groups G11C 11/00, G11C 23/00, or G11C 25/00
 G11C 13/02
·  using elements whose operation depends upon chemical change (using electrochemical charge G11C 11/00)
 G11C 13/04
·  using optical elements
 G11C 13/06
·  ·  using magneto-optical elements (magneto-optics in general G02F)  [2]
 G11C 13/08
·  ·  using electro-optical elements (electro-optics in general G02F)  [2]
 G11C 15/00
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (in which information is addressed to a specific location G11C 11/00)  [2]
 G11C 15/02
·  using magnetic elements  [2]
 G11C 15/04
·  using semiconductor elements  [2]
 G11C 15/06
·  using cryogenic elements  [2]
 G11C 17/00
Permanent stores with provision only for reading-out of information, i.e. read-only memories; Semi-permanent stores, e.g. manually-replaceable information cards (coding, decoding or code conversion, in general H03M)  [2]
 G11C 17/02
·  using magnetic or inductive elements or coupling  [2]
 G11C 17/04
·  using capacitive elements or coupling (G11C 17/06 takes precedence)  [2]
 G11C 17/06
·  using diode elements or coupling  [2]
 G11C 19/00
Digital stores in which the information is moved stepwise, e.g. shift register (counting chains H03K 23/00)
 G11C 19/02
·  using magnetic elements (G11C 19/14 takes precedence)  [2]
 G11C 19/04
·  ·  using cores with one aperture or magnetic loop  [2]
 G11C 19/06
·  ·  using structures with a number of apertures or magnetic loops, e.g. transfluxors  [2]
 G11C 19/08
·  ·  using thin films in plane structure  [2]
 G11C 19/10
·  ·  using thin films on rods; with twistors  [2]
 G11C 19/12
·  using non-linear reactive devices in resonant circuits  [2]
 G11C 19/14
·  using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements  [2]
 G11C 19/18
·  using capacitors as main elements of the stages  [2]
 G11C 19/20
·  using discharge tubes (G11C 19/14 takes precedence)  [2]
 G11C 19/28
·  using semiconductor elements (G11C 19/14 takes precedence)  [2]
 G11C 19/30
·  using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled  [2]
 G11C 19/32
·  using super-conductive elements  [2]
 G11C 21/00
Digital stores in which the information circulates (stepwise G11C 19/00)
 G11C 21/02
·  using electromechanical delay lines, e.g. using a mercury tank
 G11C 23/00
Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (storing by actuating contacts G11C 11/48)
 G11C 25/00
Digital stores characterised by the use of flowing media; Storage elements therefor
 G11C 27/00
Electric analogue stores, e.g. for storing instantaneous values
 G11C 27/02
·  Sample-and-hold arrangements (G11C 27/04 takes precedence; sampling electrical signals, in general H03K)  [2]
 G11C 27/04
·  Shift registers (charge coupled devices per se H01L 29/76)  [4]
 G11C 29/00
Checking stores for correct operation