C
SECTION C — CHEMISTRY AND METALLURGY
 C

Note(s)

Definitions for Section C:

  • Alkali metals: Li, Na, K, Rb, Cs, Fr
  • Alkaline earth metals: Ca, Sr, Ba, Ra
  • Lanthanides: elements with atomic numbers 57 to 71 inclusive
  • Rare earths: Sc, Y, Lanthanides
  • Actinides: elements with atomic numbers 89 to 103 inclusive
  • Refractory metals: Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W
  • Halogens: F, Cl, Br, I, At
  • Noble gases: He, Ne, Ar, Kr, Xe, Rn
  • Platinum group: Os, Ir, Pt, Ru, Rh, Pd
  • Noble metals: Ag, Au, Platinum group
  • Light metals: alkali metals, alkaline earth metals, Be, Al, Mg
  • Heavy metals: metals other than light metals
  • Iron group: Fe, Co, Ni
  • Non-metals: H, B, C, Si, N, P, O, S, Se, Te, noble gases, halogens
  • Metals: elements other than non-metals
  • Transition elements: elements with atomic numbers 21 to 30 inclusive, 39 to 48 inclusive, 57 to 80 inclusive, 89 upwards

  
METALLURGY
 C30
CRYSTAL GROWTH (separation by crystallisation in general B01D 9/00)  [3]
 C30B
SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIALS OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIALS; AFTER-TREATMENT OF SINGLE CRYSTALS (for producing semi-conductor devices or parts thereof H01L); DOPING PROCESSES FOR CRYSTALS IN GENERAL (for producing semi-conductor devices or parts thereof H01L); REFINING BY ZONE-MELTING OF MATERIALS IN GENERAL (zone-refining of metals or alloys C22B); APPARATUS THEREFOR  [3]
 C30B

Note(s)

  1. In this sub-class, the term "single crystal" includes also twin crystals and a predominantly single crystal product. [3]
  2. Inventions dealing with the preparation of single crystals of particular materials or shapes are classified in the group for the process as well as in group C30B 29/00[3]
  3. Apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group C30B 35/00[3]
 C30B 1/00
Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00)  [3]
 C30B 1/02
·  by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)  [3]
 C30B 1/04
·  ·  Isothermal recrystallisation  [3]
 C30B 1/06
·  ·  Recrystallisation under a temperature gradient  [3]
 C30B 1/08
·  ·  ·  Zone recrystallisation  [3]
 C30B 1/10
·  by solid state reactions or multi-phase diffusion  [3]
 C30B 1/12
·  by pressure treatment during the growth  [3]
 C30B 3/00
Unidirectional demixing of eutectoid materials  [3]
 C30B 5/00
Single-crystal growth from gels (under a protective fluid C30B 27/00)  [3]
 C30B 5/02
·  with addition of doping material Single-crystal growth from liquids; Unidirectional solidification of eutectic materials  [3]
 C30B 7/00
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00)  [3]
 C30B 7/02
·  by evaporation of the solvent  [3]
 C30B 7/04
·  ·  using aqueous solvents  [3]
 C30B 7/06
·  ·  using non-aqueous solvents  [3]
 C30B 7/08
·  by cooling of the solution  [3]
 C30B 7/10
·  by application of pressure, e.g. hydrothermal processes  [3]
 C30B 7/12
·  by electrolysis  [3]
 C30B 7/14
·  the crystallising material being formed by chemical reactions in the solution  [3]
 C30B 9/00
Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00)  [3]
 C30B 9/02
·  by evaporation of the molten solvent  [3]
 C30B 9/04
·  by cooling of the solution  [3]
 C30B 9/06
·  ·  using as solvent a component of the crystal composition  [3]
 C30B 9/08
·  ·  using other solvents  [3]
 C30B 9/10
·  ·  ·  Metal solvents  [3]
 C30B 9/12
·  ·  ·  Salt solvents, e.g. flux growth  [3]
 C30B 9/14
·  by electrolysis  [3]
 C30B 11/00
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00)  [3]
 C30B 11/02
·  without using solvents (C30B 11/06 takes precedence)  [3]
 C30B 11/04
·  adding crystallising material or reactants forming it in situ to the melt  [3]
 C30B 11/06
·  ·  at least one but not all components of the crystal composition being added  [3]
 C30B 11/08
·  ·  every component of the crystal composition being added during the crystallisation  [3]
 C30B 11/10
·  ·  ·  Solid or liquid components, e.g. Verneuil method  [3]
 C30B 11/12
·  ·  ·  Vaporous components, e.g. vapour-liquid-solid-growth  [3]
 C30B 11/14
·  characterised by the seed, e.g. its crystallographic orientation  [3]
 C30B 13/00
Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; zone-refining of specific materials, see the relevant sub-classes for the materials)  [3]
 C30B 13/02
·  Zone-melting with a solvent, e.g. travelling solvent process  [3]
 C30B 13/04
·  Homogenisation by zone-levelling  [3]
 C30B 13/06
·  the molten zone not extending over the whole cross-section  [3]
 C30B 13/08
·  adding crystallising material or reactants forming it in situ to the molten zone  [3]
 C30B 13/10
·  ·  with addition of doping material  [3]
 C30B 13/12
·  ·  ·  in the gaseous or vapour state  [3]
 C30B 13/14
·  Crucibles or vessels  [3]
 C30B 13/16
·  Heating of the molten zone  [3]
 C30B 13/18
·  ·  the heating element being in contact with, or immersed in, the molten zone  [3]
 C30B 13/20
·  ·  by induction, e.g. hot wire technique (C30B 13/18 takes precedence; induction coils H05B 6/36)  [3]
 C30B 13/22
·  ·  by irradiation or electric discharge  [3]
 C30B 13/24
·  ·  ·  using electromagnetic waves  [3]
 C30B 13/26
·  Stirring of the molten zone  [3]
 C30B 13/28
·  Controlling or regulating (controlling or regulating in general G05)  [3]
 C30B 13/30
·  ·  Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal  [3]
 C30B 13/32
·  Mechanisms for moving either the charge or the heater  [3]
 C30B 13/34
·  characterised by the seed, e.g. by its crystallographic orientation  [3]
 C30B 15/00
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00)  [3]
 C30B 15/02
·  adding crystallising material or reactants forming it in situ to the melt  [3]
 C30B 15/04
·  ·  adding doping material, e.g. for n—p-junction  [3]
 C30B 15/06
·  Non-vertical pulling  [3]
 C30B 15/08
·  Downward pulling  [3]
 C30B 15/10
·  Crucibles or containers for supporting the melt  [3]
 C30B 15/12
·  ·  Double crucible methods  [3]
 C30B 15/14
·  Heating of the melt or the crystallised material  [3]
 C30B 15/16
·  ·  by irradiation or electric discharge  [3]
 C30B 15/18
·  ·  using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat  [3]
 C30B 15/20
·  Controlling or regulating (controlling or regulating in general G05)  [3]
 C30B 15/22
·  ·  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal  [3]
 C30B 15/24
·  ·  ·  using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34)  [3]
 C30B 15/26
·  ·  ·  using television detectors; using photo or X-ray detectors  [3]
 C30B 15/28
·  ·  ·  using weight changes of the crystal or the melt, e.g. flotation methods  [3]
 C30B 15/30
·  Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28)  [3]
 C30B 15/32
·  Seed holders, e.g. chucks  [3]
 C30B 15/34
·  Edge-defined film-fed crystal growth using dies or slits  [3]
 C30B 15/36
·  characterised by the seed, e.g. its crystallographic orientation  [3]
 C30B 17/00
Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence)  [3]
 C30B 19/00
Liquid-phase epitaxial-layer growth  [3]
 C30B 19/02
·  using molten solvents, e.g. flux  [3]
 C30B 19/04
·  ·  the solvent being a component of the crystal composition  [3]
 C30B 19/06
·  Reaction chambers; Boats for supporting the melt; Substrate holders  [3]
 C30B 19/08
·  Heating of the reaction chamber or the substrate  [3]
 C30B 19/10
·  Controlling or regulating (controlling or regulating in general G05)  [3]
 C30B 19/12
·  characterised by the substrate  [3]
 C30B 21/00
Unidirectional solidification of eutectic materials  [3]
 C30B 21/02
·  by normal casting or gradient freezing  [3]
 C30B 21/04
·  by zone-melting  [3]
 C30B 21/06
·  by pulling from a melt Single-crystal growth from vapours  [3]
 C30B 23/00
Single-crystal growth by condensing evaporated or sublimed material  [3]
 C30B 23/02
·  Epitaxial-layer growth  [3]
 C30B 23/04
·  ·  Pattern deposit, e.g. by using masks  [3]
 C30B 23/06
·  ·  Heating of the deposition chamber, the substrate, or the material to be evaporated  [3]
 C30B 23/08
·  ·  by condensing ionised vapours (by reactive sputtering C30B 25/06)  [3]
 C30B 25/00
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth  [3]
 C30B 25/02
·  Epitaxial-layer growth  [3]
 C30B 25/04
·  ·  Pattern deposit, e.g. by using masks  [3]
 C30B 25/06
·  ·  by reactive sputtering  [3]
 C30B 25/08
·  ·  Reaction chambers; Selection of material therefor  [3]
 C30B 25/10
·  ·  Heating of the reaction chamber or the substrate  [3]
 C30B 25/12
·  ·  Substrate holders or susceptors  [3]
 C30B 25/14
·  ·  Feed and outlet means for the gases; Modifying the flow of the reactive gases  [3]
 C30B 25/16
·  ·  Controlling or regulating (controlling or regulating in general G05)  [3]
 C30B 25/18
·  ·  characterised by the substrate  [3]
 C30B 25/20
·  ·  ·  the substrate being of the same material as the epitaxial layer  [3]
 C30B 25/22
·  ·  Sandwich processes  [3]
 C30B 27/00
Single-crystal growth under a protective fluid  [3]
 C30B 27/02
·  by pulling from a melt  [3]
 C30B 29/00
Single crystals characterised by the material or by their shape  [3]
 C30B 29/00

Note(s)

In groups C30B 29/02-C30B 29/58, in the absence of an indication to the contrary, a material is classified in the last appropriate place. [3]

 C30B 29/02
·  Elements  [3]
 C30B 29/04
·  ·  Diamond  [3]
 C30B 29/06
·  ·  Silicon  [3]
 C30B 29/08
·  ·  Germanium  [3]
 C30B 29/10
·  Inorganic compounds or compositions  [3]
 C30B 29/12
·  ·  Halides  [3]
 C30B 29/14
·  ·  Phosphates  [3]
 C30B 29/16
·  ·  Oxides  [3]
 C30B 29/18
·  ·  ·  Quartz  [3]
 C30B 29/20
·  ·  ·  Aluminium oxides  [3]
 C30B 29/22
·  ·  ·  Complex oxides  [3]
 C30B 29/24
·  ·  ·  ·  with formula AMeO3 , wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites  [3]
 C30B 29/26
·  ·  ·  ·  with formula BMe2O4 , wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al  [3]
 C30B 29/28
·  ·  ·  ·  with formula A3Me5O12 , wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets  [3]
 C30B 29/30
·  ·  ·  ·  Niobates; Vanadates; Tantalates  [3]
 C30B 29/32
·  ·  ·  ·  Titanates; Germanates; Molybdates; Tungstates  [3]
 C30B 29/34
·  ·  Silicates  [3]
 C30B 29/36
·  ·  Carbides  [3]
 C30B 29/38
·  ·  Nitrides  [3]
 C30B 29/40
·  ·  AIIIBV compounds  [3]
 C30B 29/42
·  ·  ·  Gallium arsenide  [3]
 C30B 29/44
·  ·  ·  Gallium phosphide  [3]
 C30B 29/46
·  ·  Sulphur-, selenium- or tellurium-containing compounds  [3]
 C30B 29/48
·  ·  ·  AIIBVI compounds  [3]
 C30B 29/50
·  ·  ·  ·  Cadmium sulphide  [3]
 C30B 29/52
·  ·  Alloys  [3]
 C30B 29/54
·  Organic compounds  [3]
 C30B 29/56
·  ·  Tartrates  [3]
 C30B 29/58
·  ·  Macromolecular compounds  [3]
 C30B 29/60
·  characterised by shape  [3]
 C30B 29/62
·  ·  Whiskers or needles After-treatment of single crystals  [3]
 C30B 31/00
Diffusion or doping processes for single crystals; Apparatus therefor  [3]
 C30B 31/02
·  by contacting with diffusion material in the solid state  [3]
 C30B 31/04
·  by contacting with diffusion material in the liquid state  [3]
 C30B 31/06
·  by contacting with diffusion material in the gaseous state (C30B 31/18 takes precedence)  [3]
 C30B 31/08
·  ·  the diffusion material being a compound of the elements to be diffused  [3]
 C30B 31/10
·  ·  Reaction chambers; Selection of material therefor  [3]
 C30B 31/12
·  ·  Heating of the reaction chamber  [3]
 C30B 31/14
·  ·  Substrate holders or susceptors  [3]
 C30B 31/16
·  ·  Feed and outlet means for the gases; Modifying the flow of the gases  [3]
 C30B 31/18
·  ·  Controlling or regulating (controlling or regulating in general G05)  [3]
 C30B 31/20
·  Doping by irradiation with electromagnetic waves or by particle radiation  [3]
 C30B 31/22
·  ·  by ion-implantation  [3]
 C30B 33/00
After-treatment of single crystals (C30B 31/00 takes precedence; grinding, polishing B24; mechanical fine working of gems, jewels, crystals B28D 5/00)  [3]
 C30B 35/00
Apparatus in general, specially adapted for single-crystal-growth, diffusion, or doping processes  [3]