|  | C |
SECTION C — CHEMISTRY AND METALLURGY

|  | C |
Note(s) Definitions for Section C: Alkali metals: Li, Na, K, Rb, Cs, Fr Alkaline earth metals: Ca, Sr, Ba, Ra Lanthanides: elements with atomic numbers 57 to 71 inclusive Rare earths: Sc, Y, Lanthanides Actinides: elements with atomic numbers 89 to 103 inclusive Refractory metals: Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W Halogens: F, Cl, Br, I, At Noble gases: He, Ne, Ar, Kr, Xe, Rn Platinum group: Os, Ir, Pt, Ru, Rh, Pd Noble metals: Ag, Au, Platinum group Light metals: alkali metals, alkaline earth metals, Be, Al, Mg Heavy metals: metals other than light metals Iron group: Fe, Co, Ni Non-metals: H, B, C, Si, N, P, O, S, Se, Te, noble gases, halogens Metals: elements other than non-metals Transition elements: elements with atomic numbers 21 to 30 inclusive, 39 to 48 inclusive, 57 to 80 inclusive, 89 upwards

METALLURGY

|  | C30 |
CRYSTAL GROWTH (separation by crystallisation in general Fulltext... Hierarchy... Expanded...B01D 9/00) [3]

|  | C30B |
SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds Fulltext... Hierarchy... Expanded...B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIALS OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIALS; AFTER-TREATMENT OF SINGLE CRYSTALS (for producing semi-conductor devices or parts thereof Fulltext... Hierarchy... Expanded...H01L); DOPING PROCESSES FOR CRYSTALS IN GENERAL (for producing semi-conductor devices or parts thereof Fulltext... Hierarchy... Expanded...H01L); REFINING BY ZONE-MELTING OF MATERIALS IN GENERAL (zone-refining of metals or alloys Fulltext... Hierarchy... Expanded...C22B); APPARATUS THEREFOR [3]

|  | C30B |
Note(s) In this sub-class, the term "single crystal" includes also twin crystals and a predominantly single crystal product. [3] Inventions dealing with the preparation of single crystals of particular materials or shapes are classified in the group for the process as well as in group Fulltext... Hierarchy... Expanded...C30B 29/00. [3] Apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group Fulltext... Hierarchy... Expanded...C30B 35/00. [3]

|  | C30B 1/00 |
Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials Fulltext... Hierarchy... Expanded...C30B 3/00; under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00) [3]

|  | C30B 1/02 |
· | by thermal treatment, e.g. strain annealing (Fulltext... Hierarchy... Expanded...C30B 1/12 takes precedence) [3]

|  | C30B 1/04 |
· · | Isothermal recrystallisation [3]

|  | C30B 1/06 |
· · | Recrystallisation under a temperature gradient [3]

|  | C30B 1/08 |
· · · | Zone recrystallisation [3]

|  | C30B 1/10 |
· | by solid state reactions or multi-phase diffusion [3]

|  | C30B 1/12 |
· | by pressure treatment during the growth [3]

|  | C30B 3/00 |
Unidirectional demixing of eutectoid materials [3]

|  | C30B 5/00 |
Single-crystal growth from gels (under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00) [3]

|  | C30B 5/02 |
· | with addition of doping material Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [3]

|  | C30B 7/00 |
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents Fulltext... Hierarchy... Expanded...C30B 9/00; by normal or gradient freezing Fulltext... Hierarchy... Expanded...C30B 11/00; under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00) [3]

|  | C30B 7/02 |
· | by evaporation of the solvent [3]

|  | C30B 7/04 |
· · | using aqueous solvents [3]

|  | C30B 7/06 |
· · | using non-aqueous solvents [3]

|  | C30B 7/08 |
· | by cooling of the solution [3]

|  | C30B 7/10 |
· | by application of pressure, e.g. hydrothermal processes [3]

|  | C30B 7/12 |
· | by electrolysis [3]

|  | C30B 7/14 |
· | the crystallising material being formed by chemical reactions in the solution [3]

|  | C30B 9/00 |
Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing Fulltext... Hierarchy... Expanded...C30B 11/00; by zone-melting Fulltext... Hierarchy... Expanded...C30B 13/00; by crystal pulling Fulltext... Hierarchy... Expanded...C30B 15/00; on immersed seed crystal Fulltext... Hierarchy... Expanded...C30B 17/00; by liquid phase epitaxial growth Fulltext... Hierarchy... Expanded...C30B 19/00; under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00) [3]

|  | C30B 9/02 |
· | by evaporation of the molten solvent [3]

|  | C30B 9/04 |
· | by cooling of the solution [3]

|  | C30B 9/06 |
· · | using as solvent a component of the crystal composition [3]

|  | C30B 9/08 |
· · | using other solvents [3]

|  | C30B 9/10 |
· · · | Metal solvents [3]

|  | C30B 9/12 |
· · · | Salt solvents, e.g. flux growth [3]

|  | C30B 9/14 |
· | by electrolysis [3]

|  | C30B 11/00 |
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (Fulltext... Hierarchy... Expanded...C30B 13/00, Fulltext... Hierarchy... Expanded...C30B 15/00, Fulltext... Hierarchy... Expanded...C30B 17/00, Fulltext... Hierarchy... Expanded...C30B 19/00 take precedence; under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00) [3]

|  | C30B 11/02 |
· | without using solvents (Fulltext... Hierarchy... Expanded...C30B 11/06 takes precedence) [3]

|  | C30B 11/04 |
· | adding crystallising material or reactants forming it in situ to the melt [3]

|  | C30B 11/06 |
· · | at least one but not all components of the crystal composition being added [3]

|  | C30B 11/08 |
· · | every component of the crystal composition being added during the crystallisation [3]

|  | C30B 11/10 |
· · · | Solid or liquid components, e.g. Verneuil method [3]

|  | C30B 11/12 |
· · · | Vaporous components, e.g. vapour-liquid-solid-growth [3]

|  | C30B 11/14 |
· | characterised by the seed, e.g. its crystallographic orientation [3]

|  | C30B 13/00 |
Single-crystal growth by zone-melting; Refining by zone-melting (Fulltext... Hierarchy... Expanded...C30B 17/00 takes precedence; by changing the cross-section of the treated solid Fulltext... Hierarchy... Expanded...C30B 15/00; under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00; zone-refining of specific materials, see the relevant sub-classes for the materials) [3]

|  | C30B 13/02 |
· | Zone-melting with a solvent, e.g. travelling solvent process [3]

|  | C30B 13/04 |
· | Homogenisation by zone-levelling [3]

|  | C30B 13/06 |
· | the molten zone not extending over the whole cross-section [3]

|  | C30B 13/08 |
· | adding crystallising material or reactants forming it in situ to the molten zone [3]

|  | C30B 13/10 |
· · | with addition of doping material [3]

|  | C30B 13/12 |
· · · | in the gaseous or vapour state [3]

|  | C30B 13/14 |
· | Crucibles or vessels [3]

|  | C30B 13/16 |
· | Heating of the molten zone [3]

|  | C30B 13/18 |
· · | the heating element being in contact with, or immersed in, the molten zone [3]

|  | C30B 13/20 |
· · | by induction, e.g. hot wire technique (Fulltext... Hierarchy... Expanded...C30B 13/18 takes precedence; induction coils Fulltext... Hierarchy... Expanded...H05B 6/36) [3]

|  | C30B 13/22 |
· · | by irradiation or electric discharge [3]

|  | C30B 13/24 |
· · · | using electromagnetic waves [3]

|  | C30B 13/26 |
· | Stirring of the molten zone [3]

|  | C30B 13/28 |
· | Controlling or regulating (controlling or regulating in general Fulltext... Hierarchy... Expanded...G05) [3]

|  | C30B 13/30 |
· · | Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3]

|  | C30B 13/32 |
· | Mechanisms for moving either the charge or the heater [3]

|  | C30B 13/34 |
· | characterised by the seed, e.g. by its crystallographic orientation [3]

|  | C30B 15/00 |
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid Fulltext... Hierarchy... Expanded...C30B 27/00) [3]

|  | C30B 15/02 |
· | adding crystallising material or reactants forming it in situ to the melt [3]

|  | C30B 15/04 |
· · | adding doping material, e.g. for n—p-junction [3]

|  | C30B 15/06 |
· | Non-vertical pulling [3]

|  | C30B 15/08 |
· | Downward pulling [3]

|  | C30B 15/10 |
· | Crucibles or containers for supporting the melt [3]

|  | C30B 15/12 |
· · | Double crucible methods [3]

|  | C30B 15/14 |
· | Heating of the melt or the crystallised material [3]

|  | C30B 15/16 |
· · | by irradiation or electric discharge [3]

|  | C30B 15/18 |
· · | using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3]

|  | C30B 15/20 |
· | Controlling or regulating (controlling or regulating in general Fulltext... Hierarchy... Expanded...G05) [3]

|  | C30B 15/22 |
· · | Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3]

|  | C30B 15/24 |
· · · | using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth Fulltext... Hierarchy... Expanded...C30B 15/34) [3]

|  | C30B 15/26 |
· · · | using television detectors; using photo or X-ray detectors [3]

|  | C30B 15/28 |
· · · | using weight changes of the crystal or the melt, e.g. flotation methods [3]

|  | C30B 15/30 |
· | Mechanisms for rotating or moving either the melt or the crystal (flotation methods Fulltext... Hierarchy... Expanded...C30B 15/28) [3]

|  | C30B 15/32 |
· | Seed holders, e.g. chucks [3]

|  | C30B 15/34 |
· | Edge-defined film-fed crystal growth using dies or slits [3]

|  | C30B 15/36 |
· | characterised by the seed, e.g. its crystallographic orientation [3]

|  | C30B 17/00 |
Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (Fulltext... Hierarchy... Expanded...C30B 15/00 takes precedence) [3]

|  | C30B 19/00 |
Liquid-phase epitaxial-layer growth [3]

|  | C30B 19/02 |
· | using molten solvents, e.g. flux [3]

|  | C30B 19/04 |
· · | the solvent being a component of the crystal composition [3]

|  | C30B 19/06 |
· | Reaction chambers; Boats for supporting the melt; Substrate holders [3]

|  | C30B 19/08 |
· | Heating of the reaction chamber or the substrate [3]

|  | C30B 19/10 |
· | Controlling or regulating (controlling or regulating in general Fulltext... Hierarchy... Expanded...G05) [3]

|  | C30B 19/12 |
· | characterised by the substrate [3]

|  | C30B 21/00 |
Unidirectional solidification of eutectic materials [3]

|  | C30B 21/02 |
· | by normal casting or gradient freezing [3]

|  | C30B 21/04 |
· | by zone-melting [3]

|  | C30B 21/06 |
· | by pulling from a melt Single-crystal growth from vapours [3]

|  | C30B 23/00 |
Single-crystal growth by condensing evaporated or sublimed material [3]

|  | C30B 23/02 |
· | Epitaxial-layer growth [3]

|  | C30B 23/04 |
· · | Pattern deposit, e.g. by using masks [3]

|  | C30B 23/06 |
· · | Heating of the deposition chamber, the substrate, or the material to be evaporated [3]

|  | C30B 23/08 |
· · | by condensing ionised vapours (by reactive sputtering Fulltext... Hierarchy... Expanded...C30B 25/06) [3]

|  | C30B 25/00 |
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth [3]

|  | C30B 25/02 |
· | Epitaxial-layer growth [3]

|  | C30B 25/04 |
· · | Pattern deposit, e.g. by using masks [3]

|  | C30B 25/06 |
· · | by reactive sputtering [3]

|  | C30B 25/08 |
· · | Reaction chambers; Selection of material therefor [3]

|  | C30B 25/10 |
· · | Heating of the reaction chamber or the substrate [3]

|  | C30B 25/12 |
· · | Substrate holders or susceptors [3]

|  | C30B 25/14 |
· · | Feed and outlet means for the gases; Modifying the flow of the reactive gases [3]

|  | C30B 25/16 |
· · | Controlling or regulating (controlling or regulating in general Fulltext... Hierarchy... Expanded...G05) [3]

|  | C30B 25/18 |
· · | characterised by the substrate [3]

|  | C30B 25/20 |
· · · | the substrate being of the same material as the epitaxial layer [3]

|  | C30B 25/22 |
· · | Sandwich processes [3]

|  | C30B 27/00 |
Single-crystal growth under a protective fluid [3]

|  | C30B 27/02 |
· | by pulling from a melt [3]

|  | C30B 29/00 |
Single crystals characterised by the material or by their shape [3]

|  | C30B 29/00 |
Note(s) In groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...C30B 29/02-C30B 29/58, in the absence of an indication to the contrary, a material is classified in the last appropriate place. [3]

|  | C30B 29/02 |
· | Elements [3]

|  | C30B 29/04 |
· · | Diamond [3]

|  | C30B 29/06 |
· · | Silicon [3]

|  | C30B 29/08 |
· · | Germanium [3]

|  | C30B 29/10 |
· | Inorganic compounds or compositions [3]

|  | C30B 29/12 |
· · | Halides [3]

|  | C30B 29/14 |
· · | Phosphates [3]

|  | C30B 29/16 |
· · | Oxides [3]

|  | C30B 29/18 |
· · · | Quartz [3]

|  | C30B 29/20 |
· · · | Aluminium oxides [3]

|  | C30B 29/22 |
· · · | Complex oxides [3]

|  | C30B 29/24 |
· · · · | with formula AMeO3 , wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3]

|  | C30B 29/26 |
· · · · | with formula BMe2O4 , wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3]

|  | C30B 29/28 |
· · · · | with formula A3Me5O12 , wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3]

|  | C30B 29/30 |
· · · · | Niobates; Vanadates; Tantalates [3]

|  | C30B 29/32 |
· · · · | Titanates; Germanates; Molybdates; Tungstates [3]

|  | C30B 29/34 |
· · | Silicates [3]

|  | C30B 29/36 |
· · | Carbides [3]

|  | C30B 29/38 |
· · | Nitrides [3]

|  | C30B 29/40 |
· · | AIIIBV compounds [3]

|  | C30B 29/42 |
· · · | Gallium arsenide [3]

|  | C30B 29/44 |
· · · | Gallium phosphide [3]

|  | C30B 29/46 |
· · | Sulphur-, selenium- or tellurium-containing compounds [3]

|  | C30B 29/48 |
· · · | AIIBVI compounds [3]

|  | C30B 29/50 |
· · · · | Cadmium sulphide [3]

|  | C30B 29/52 |
· · | Alloys [3]

|  | C30B 29/54 |
· | Organic compounds [3]

|  | C30B 29/56 |
· · | Tartrates [3]

|  | C30B 29/58 |
· · | Macromolecular compounds [3]

|  | C30B 29/60 |
· | characterised by shape [3]

|  | C30B 29/62 |
· · | Whiskers or needles After-treatment of single crystals [3]

|  | C30B 31/00 |
Diffusion or doping processes for single crystals; Apparatus therefor [3]

|  | C30B 31/02 |
· | by contacting with diffusion material in the solid state [3]

|  | C30B 31/04 |
· | by contacting with diffusion material in the liquid state [3]

|  | C30B 31/06 |
· | by contacting with diffusion material in the gaseous state (Fulltext... Hierarchy... Expanded...C30B 31/18 takes precedence) [3]

|  | C30B 31/08 |
· · | the diffusion material being a compound of the elements to be diffused [3]

|  | C30B 31/10 |
· · | Reaction chambers; Selection of material therefor [3]

|  | C30B 31/12 |
· · | Heating of the reaction chamber [3]

|  | C30B 31/14 |
· · | Substrate holders or susceptors [3]

|  | C30B 31/16 |
· · | Feed and outlet means for the gases; Modifying the flow of the gases [3]

|  | C30B 31/18 |
· · | Controlling or regulating (controlling or regulating in general Fulltext... Hierarchy... Expanded...G05) [3]

|  | C30B 31/20 |
· | Doping by irradiation with electromagnetic waves or by particle radiation [3]

|  | C30B 31/22 |
· · | by ion-implantation [3]

|  | C30B 33/00 |
After-treatment of single crystals (Fulltext... Hierarchy... Expanded...C30B 31/00 takes precedence; grinding, polishing Fulltext... Hierarchy... Expanded...B24; mechanical fine working of gems, jewels, crystals Fulltext... Hierarchy... Expanded...B28D 5/00) [3]

|  | C30B 35/00 |
Apparatus in general, specially adapted for single-crystal-growth, diffusion, or doping processes [3]