|  | H |
SECTION H — ELECTRICITY

|  | H01 |
BASIC ELECTRIC ELEMENTS

|  | H01 |
Note(s) Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.

|  | H01L |
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring Fulltext... Hierarchy... Expanded...G01; resistors in general Fulltext... Hierarchy... Expanded...H01C; magnets, inductors, transformers Fulltext... Hierarchy... Expanded...H01F; capacitors in general Fulltext... Hierarchy... Expanded...H01G; electrolytic devices Fulltext... Hierarchy... Expanded...H01G 9/00; batteries, accumulators Fulltext... Hierarchy... Expanded...H01M; waveguides, resonators, or lines of the waveguide type Fulltext... Hierarchy... Expanded...H01P; line connectors, current collectors Fulltext... Hierarchy... Expanded...H01R; stimulated-emission devices Fulltext... Hierarchy... Expanded...H01S; electromechanical resonators Fulltext... Hierarchy... Expanded...H03H; electromechanical transducers for electrical communication Fulltext... Hierarchy... Expanded...H04R; electric light sources in general Fulltext... Hierarchy... Expanded...H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components Fulltext... Hierarchy... Expanded...H05K; use of semiconductor devices in circuits having a particular application, see the sub-class for the application) [2]

|  | H01L |
Note(s) This sub-class provides for electric solid state devices which are not provided for in any other sub-class and details thereof, and includes: semiconductor devices adapted for rectifying, amplifying, oscillating or switching; semiconductor devices sensitive to radiation; electric solid state devices using thermoelectric, superconductive, piezo-electric, electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and integrated circuit devices. Also provided for in this sub-class are photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes, electromechanical solid state transducers and thin-film or thick-film circuits. Furthermore, it provides for processes and apparatus adapted for the manufacture or treatment of such devices, except where such processes relate to single-step processes for which provision exists elsewhere. [2] In this sub-class The expression "solid state body" refers to the body of material within which, or at the surface of which, the physical effects characteristic of the device occur. In thermoelectric devices, it includes all materials in the current path. Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid state body electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto. An electrode may include several portions and the term includes metallic regions which exert influence on the solid state body through an insulating region (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, only those portions which exert an influence on the solid state body by virtue of their shape, size, or disposition or the material of which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangements for conducting electric current to or from the solid state body" or "interconnections between solid state components formed in or on a common substrate", i.e. leads. The word "device" refers to an electric circuit element; where an electric circuit element is one of a plurality of elements formed in or on a common substrate it is referred to as a "component". A "complete device" is a device in its fully assembled state which may or may not require further treatment, e.g. electroforming, before it is ready for use but which does not require the addition of further structural units. The word "parts" includes all structural units which are included in a complete device. A "container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body of the device is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation". "Integrated circuit" is a device where all components, e.g. diodes, resistors, are built up on a common substrate and form the device including interconnections between the components. "Assembly" of a device is the building up of the device from its component constructional units and includes the provision of fillings in containers. [2]

|  | H01L 1/00 - H01L 19/00 |
( transferred to Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/00-H01L 49/00 )

|  | H01L 21/00 |
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 31/00-H01L 49/00 or of parts thereof, see the relevant groups; single-step processes provided for in other subclasses, see th relevant sub-classes, e.g. Fulltext... Hierarchy... Expanded...B01J, Fulltext... Hierarchy... Expanded...C23C) [2]

|  | H01L 21/02 - H01L 21/68 |
Note(s) Fulltext... Hierarchy... Expanded...H01L 21/70 takes precedence over groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/02-H01L 21/68. [2]

|  | H01L 21/02 |
· | Manufacture or treatment of semiconductor devices or of parts thereof [2]

|  | H01L 21/04 |
· · | the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer [2]

|  | H01L 21/06 |
· · · | the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials [2]

|  | H01L 21/08 |
· · · · | Preparation of the foundation plate [2]

|  | H01L 21/10 |
· · · · | Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination [2]

|  | H01L 21/103 |
· · · · · | Conversion of the selenium or tellurium to the conductive state [2]

|  | H01L 21/105 |
· · · · · | Treatment of the surface of the selenium or tellurium layer after having been made conductive [2]

|  | H01L 21/108 |
· · · · · | Provision of discrete insulating layers, i.e. non-genetic barrier layers [2]

|  | H01L 21/12 |
· · · · | Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate [2]

|  | H01L 21/14 |
· · · · | Treatment of the complete device, e.g. by electroforming to form a barrier [2]

|  | H01L 21/145 |
· · · · · | Ageing [2]

|  | H01L 21/16 |
· · · | the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide [2]

|  | H01L 21/18 |
· · · | the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials [2]

|  | H01L 21/20 |
· · · · | Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]

|  | H01L 21/203 |
· · · · · | using physical deposition, e.g. vacuum deposition, sputtering [2]

|  | H01L 21/205 |
· · · · · | using reduction or decomposition of a gaseous compound yielding a solid condensate, chemical deposition [2]

|  | H01L 21/208 |
· · · · · | using liquid deposition [2]

|  | H01L 21/22 |
· · · · | Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2]

|  | H01L 21/223 |
· · · · · | using diffusion into, or out of, a solid from or into a gaseous phase [2]

|  | H01L 21/225 |
· · · · · | using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]

|  | H01L 21/228 |
· · · · · | using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]

|  | H01L 21/24 |
· · · · | Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]

|  | H01L 21/26 |
· · · · | Bombardment with radiation [2]

|  | H01L 21/263 |
· · · · · | with high-energy radiation [2]

|  | H01L 21/265 |
· · · · · · | producing ion implantation (ion-beam tubes for localized treatment Fulltext... Hierarchy... Expanded...H01J 37/30) [2]

|  | H01L 21/268 |
· · · · · · | using electromagnetic radiation, e.g. laser radiation [2]

|  | H01L 21/28 |
· · · · | Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/20-H01L 21/268 [2]

|  | H01L 21/283 |
· · · · · | Deposition of conductive or insulating materials for electrodes [2]

|  | H01L 21/285 |
· · · · · · | from a gas or vapour, e.g. condensation [2]

|  | H01L 21/288 |
· · · · · · | from a liquid, e.g. electrolytic deposition [2]

|  | H01L 21/30 |
· · · · | Treatment of semiconductor bodies using processes or apparatus not provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/20-H01L 21/26 (manufacture of electrodes thereon Fulltext... Hierarchy... Expanded...H01L 21/28) [2]

|  | H01L 21/302 |
· · · · · | to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2]

|  | H01L 21/304 |
· · · · · · | Mechanical treatment, e.g. grinding, ultrasonic treatment [2]

|  | H01L 21/306 |
· · · · · · | Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers Fulltext... Hierarchy... Expanded...H01L 21/31) [2]

|  | H01L 21/308 |
· · · · · · · | using masks [2]

|  | H01L 21/31 |
· · · · · · | to form insulating layers thereon, e.g. for masking (layers forming electrodes Fulltext... Hierarchy... Expanded...H01L 21/28; encapsulating layers Fulltext... Hierarchy... Expanded...H01L 21/56) [2]

|  | H01L 21/312 |
· · · · · · · | organic layers, e.g. photoresist [2]

|  | H01L 21/314 |
· · · · · · · | inorganic layers [2]

|  | H01L 21/316 |
· · · · · · · · | composed of oxides or glassy oxides or oxide-based glass [2]

|  | H01L 21/318 |
· · · · · · · · | composed of nitrides [2]

|  | H01L 21/32 |
· · · · · · · | using masks (Fulltext... Hierarchy... Expanded...H01L 21/308 takes precedence) [2]

|  | H01L 21/322 |
· · · · · | to modify their internal properties, e.g. to produce internal imperfections [2]

|  | H01L 21/324 |
· · · · · | Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/20-H01L 21/288 and Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/302-H01L 21/322 take precedence) [2]

|  | H01L 21/326 |
· · · · · | Application of electric currents or fields, e.g. for electroforming (Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/20-H01L 21/288, Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/302-H01L 21/324 take precedence) [2]

|  | H01L 21/34 |
· · · | the devices having semiconductor bodies not provided for in groups Fulltext... Hierarchy... Expanded...H01L 21/06, Fulltext... Hierarchy... Expanded...H01L 21/16, and Fulltext... Hierarchy... Expanded...H01L 21/18 with or without impurities, e.g. doping materials [2]

|  | H01L 21/36 |
· · · · | Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]

|  | H01L 21/363 |
· · · · · | using physical deposition, e.g. vacuum deposition, sputtering [2]

|  | H01L 21/365 |
· · · · · | using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]

|  | H01L 21/368 |
· · · · · | using liquid deposition [2]

|  | H01L 21/38 |
· · · · | Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2]

|  | H01L 21/383 |
· · · · · | using diffusion into, or out of, a solid from or into a gaseous phase [2]

|  | H01L 21/385 |
· · · · · | using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]

|  | H01L 21/388 |
· · · · · | using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]

|  | H01L 21/40 |
· · · · | Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]

|  | H01L 21/42 |
· · · · | Bombardment with radiation [2]

|  | H01L 21/423 |
· · · · · | with high-energy radiation [2]

|  | H01L 21/425 |
· · · · · · | producing ion implantation (ion-beam tubes for localized treatment Fulltext... Hierarchy... Expanded...H01J 37/30) [2]

|  | H01L 21/428 |
· · · · · · | using electromagnetic radiation, e.g. laser radiation [2]

|  | H01L 21/44 |
· · · · | Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/36-H01L 21/428 [2]

|  | H01L 21/441 |
· · · · · | Deposition of conductive or insulating materials for electrodes [2]

|  | H01L 21/443 |
· · · · · · | from a gas or vapour, e.g. condensation [2]

|  | H01L 21/445 |
· · · · · · | from a liquid, e.g. electrolytic deposition [2]

|  | H01L 21/447 |
· · · · · | involving the application of pressure, e.g. thermo-compression bonding (Fulltext... Hierarchy... Expanded...H01L 21/607 takes precedence) [2]

|  | H01L 21/449 |
· · · · · | involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]

|  | H01L 21/46 |
· · · · | Treatment of semiconductor bodies using processes or apparatus not provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/36-H01L 21/428 (manufacture of electrodes thereon Fulltext... Hierarchy... Expanded...H01L 21/44) [2]

|  | H01L 21/461 |
· · · · · | to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2]

|  | H01L 21/463 |
· · · · · · | Mechanical treatment, e.g. grinding, ultrasonic treatment [2]

|  | H01L 21/465 |
· · · · · · | Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers Fulltext... Hierarchy... Expanded...H01L 21/469) [2]

|  | H01L 21/467 |
· · · · · · · | using masks [2]

|  | H01L 21/469 |
· · · · · · | to form insulating layers thereon, e.g. for masking (layers forming electrodes Fulltext... Hierarchy... Expanded...H01L 21/44; encapsulation layers Fulltext... Hierarchy... Expanded...H01L 21/56) [2]

|  | H01L 21/47 |
· · · · · · · | organic layers, e.g. photoresist [2]

|  | H01L 21/471 |
· · · · · · · | inorganic layers [2]

|  | H01L 21/473 |
· · · · · · · · | composed of oxides or glassy oxides or oxide-based glass [2]

|  | H01L 21/475 |
· · · · · · · | using masks (Fulltext... Hierarchy... Expanded...H01L 21/467 takes precedence) [2]

|  | H01L 21/477 |
· · · · · | Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/36-H01L 21/449, Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/461-H01L 21/475 take precedence) [2]

|  | H01L 21/479 |
· · · · · | Application of electric currents or fields, e.g. for electroforming (Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/36-H01L 21/449, Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/461-H01L 21/477 take precedence) [2]

|  | H01L 21/48 |
· · · | Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/06-H01L 21/326 (containers, encapsulations, fillings, mountings per se Fulltext... Hierarchy... Expanded...H01L 23/00) [2]

|  | H01L 21/50 |
· · · | Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the sub-groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 21/06-H01L 21/326 [2]

|  | H01L 21/52 |
· · · · | Mounting semiconductor bodies in containers [2]

|  | H01L 21/54 |
· · · · | Providing fillings in containers, e.g. gas fillings [2]

|  | H01L 21/56 |
· · · · | Encapsulations, e.g. encapsulation layers, coatings [2]

|  | H01L 21/58 |
· · · · | Mounting semiconductor devices on supports [2]

|  | H01L 21/60 |
· · · · | Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2]

|  | H01L 21/603 |
· · · · · | involving the application of pressure, e.g. thermo-compression bonding (Fulltext... Hierarchy... Expanded...H01L 21/607 takes precedence) [2]

|  | H01L 21/607 |
· · · · · | involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]

|  | H01L 21/62 |
· · | the devices having no potential-jump barriers or surface barriers [2]

|  | H01L 21/64 |
· | Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 31/00-H01L 49/00 [2]

|  | H01L 21/66 |
· | Testing or measuring during manufacture or treatment (after manufacture Fulltext... Hierarchy... Expanded...G01R 31/26) [2]

|  | H01L 21/68 |
· | Apparatus for supporting or positioning components during manufacture, e.g. jigs [2]

|  | H01L 21/70 |
· | Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof (manufacture of assemblies consisting of preformed electrical components Fulltext... Hierarchy... Expanded...H05K 3/00, Fulltext... Hierarchy... Expanded...H05K 13/00) [2]

|  | H01L 21/72 |
· · | the substrate being a semiconductor body [2]

|  | H01L 21/74 |
· · · | Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2]

|  | H01L 21/76 |
· · · | Making of isolation regions between components, e.g. PN junctions, dielectric layers, air gaps [2]

|  | H01L 21/78 |
· · · | with subsequent division of the substrate into a plurality of individual components [2]

|  | H01L 21/80 |
· · · · | each individual component consisting of a plurality of components formed in or on a common substrate [2]

|  | H01L 21/82 |
· · · | without subsequent division of the substrate into a plurality of individual components, e.g. integrated circuits [2]

|  | H01L 21/84 |
· · | the substrate being other than a semiconductor body, e.g. being an insulating body [2]

|  | H01L 21/86 |
· · · | the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS [2]

|  | H01L 21/88 |
· · | Applying leads or other conductive members to be used for carrying current [2]

|  | H01L 21/90 |
· · · | within the device from one component in operation to the other [2]

|  | H01L 21/92 |
· · · | to or from the device in operation [2]

|  | H01L 21/94 |
· · | Forming insulating layers or insulating regions [2]

|  | H01L 21/95 |
· · · | within the device [2]

|  | H01L 21/96 |
· · | Manufacture or treatment of parts, e.g. containers, for devices consisting of a plurality of solid state components formed in or on a common substrate, prior to assembly of the devices; Manufacture or treatment of parts, e.g. containers, for integrated circuit devices, prior to assembly of the devices (containers, encapsulations, fillings, mountings per se Fulltext... Hierarchy... Expanded...H01L 23/00) [2]

|  | H01L 21/98 |
· · | Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices [2]

|  | H01L 23/00 |
Details of semiconductor or other solid state devices (Fulltext... Hierarchy... Expanded...H01L 25/00 takes precedence; details of semiconductor bodies or of electrodes of devices provided for in group Fulltext... Hierarchy... Expanded...H01L 29/00 are classified therein; details peculiar to devices provided for in a single group of groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 31/00-H01L 49/00 are classified therein) [2]

|  | H01L 23/02 |
· | Containers; Seals (Fulltext... Hierarchy... Expanded...H01L 23/12, Fulltext... Hierarchy... Expanded...H01L 23/34, Fulltext... Hierarchy... Expanded...H01L 23/48 take precedence) [2]

|  | H01L 23/04 |
· · | characterised by the shape [2]

|  | H01L 23/06 |
· · | characterised by the material of the container or its electrical properties [2]

|  | H01L 23/08 |
· · · | the material being an electrical insulator, e.g. glass [2]

|  | H01L 23/10 |
· · | characterised by the material or arrangement of seals between parts, e.g. between containers and mountings [2]

|  | H01L 23/12 |
· | Mountings [2]

|  | H01L 23/14 |
· · | characterised by the material or its electrical properties [2]

|  | H01L 23/16 |
· | Fillings [2]

|  | H01L 23/18 |
· · | characterised by the material or its physical or chemical properties or its arrangement within the complete device [2]

|  | H01L 23/20 - H01L 23/24 |
Note(s) Group Fulltext... Hierarchy... Expanded...H01L 23/26 takes precedence over groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 23/20-H01L 23/24. [2]

|  | H01L 23/20 |
· · · | gaseous at the normal operating temperature of the device [2]

|  | H01L 23/22 |
· · · | liquid at the normal operating temperature of the device [2]

|  | H01L 23/24 |
· · · | solid or gel, at the normal operating temperature of the device [2]

|  | H01L 23/26 |
· · · | including materials for absorbing or reacting with moisture or other undesired substances [2]

|  | H01L 23/28 |
· | Encapsulations [2]

|  | H01L 23/30 |
· · | characterised by the material or arrangement of the encapsulation [2]

|  | H01L 23/32 |
· | Holders for supporting the complete device in operation [2]

|  | H01L 23/34 |
· | Cooling arrangements; Heating arrangements; Ventilating arrangements [2]

|  | H01L 23/36 |
· · | Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks [2]

|  | H01L 23/38 |
· · | Cooling arrangements using the Peltier effect [2]

|  | H01L 23/40 |
· · | Mountings or securing means for detachable cooling or heating arrangements [2]

|  | H01L 23/42 |
· · | Fillings selected or arranged to facilitate heating or cooling, e.g. by change of state [2]

|  | H01L 23/44 |
· · | the complete device being wholly immersed in a fluid other than air [2]

|  | H01L 23/46 |
· · | involving the transfer of heat by flowing fluids (Fulltext... Hierarchy... Expanded...H01L 23/42, Fulltext... Hierarchy... Expanded...H01L 23/44 take precedence) [2]

|  | H01L 23/48 |
· | Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements (in general Fulltext... Hierarchy... Expanded...H01R) [2]

|  | H01L 23/50 |
· · | for integrated circuit devices [2]

|  | H01L 23/52 |
· | Arrangements for conducting electric current within the device in operation from one component to another [2]

|  | H01L 23/54 |
· | Details of semiconductor or other solid state devices or of electrodes thereof, e.g. selection of materials therefor, not peculiar to devices provided for in a single group of groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 31/00-H01L 49/00 (Fulltext... Hierarchy... Expanded...H01L 29/00 takes precedence) [2]

|  | H01L 23/56 |
· | Circuit arrangements not adapted to a particular application of the device, e.g. for temperature compensation [2]

|  | H01L 25/00 |
Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; details of complete circuit assemblies for which provision exists in another sub-class, e.g. details of television receivers, see the relevant sub-class, e.g. Fulltext... Hierarchy... Expanded...H04N; details of assemblies of electrical components in general Fulltext... Hierarchy... Expanded...H05K) [2]

|  | H01L 25/02 |
· | the devices all being of a type provided for in the same main group of groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 27/00-H01L 49/00, e.g. assemblies of rectifiers [2]

|  | H01L 25/04 |
· · | the devices not having separate containers [2]

|  | H01L 25/06 |
· · · | Apertured devices mounted on one or more rods passed through the apertures [2]

|  | H01L 25/08 |
· · · | Stacked arrangements of non-apertured devices [2]

|  | H01L 25/10 |
· · | the devices having separate containers [2]

|  | H01L 25/12 |
· · · | having one terminal in common [2]

|  | H01L 25/14 |
· · · | Stacked arrangements, e.g. of sandwich-type rectifiers [2]

|  | H01L 25/16 |
· | the devices being of types provided for in two or more different main groups of groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 27/00-H01L 49/00 [2]

|  | H01L 27/00 |
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate Integrated circuits devices (processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof Fulltext... Hierarchy... Expanded...H01L 21/70, Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 31/00-H01L 49/00; details thereof Fulltext... Hierarchy... Expanded...H01L 23/00, Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 29/00-H01L 49/00; assemblies consisting of a plurality of individual solid state devices Fulltext... Hierarchy... Expanded...H01L 25/00; assemblies of electrical components in general, e.g. hybrid circuits, Fulltext... Hierarchy... Expanded...H05K) [2]

|  | H01L 27/00 |
Note(s) Matter is classified in the last appropriate place. [2]

|  | H01L 27/02 |
· | including semiconductor components adapted for rectifying, oscillating, amplifying, switching or including integrated passive circuit elements with at least one potential-jump barrier or surface barrier [2]

|  | H01L 27/04 |
· · | the substrate being a semiconductor body [2]

|  | H01L 27/06 |
· · · | including a plurality of individual components in a non-repetitive configuration [2]

|  | H01L 27/08 |
· · · | including only semiconductor components of a single kind [2]

|  | H01L 27/10 |
· · · | including a plurality of individual components in a repetitive configuration [2]

|  | H01L 27/12 |
· · | the substrate being other than a semiconductor body, e.g. an insulating body [2]

|  | H01L 27/14 |
· | including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of a shorter wavelength, or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only Fulltext... Hierarchy... Expanded...H01L 31/14) [2]

|  | H01L 27/15 |
· | including semiconductor components with at least one potential-jump barrier or surface barrier adapted for light emission [2]

|  | H01L 27/16 |
· | including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices Fulltext... Hierarchy... Expanded...H01L 23/38) [2]

|  | H01L 27/18 |
· | including components exhibiting superconductivity [2]

|  | H01L 27/20 |
· | including piezo-electric components; including electrostrictive components; including magnetostrictive components; including semiconductor components adapted for use as electromechanical transducers (electromechanical transducers adapted for electrical communication technique Fulltext... Hierarchy... Expanded...H04R) [2]

|  | H01L 27/22 |
· | including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects [2]

|  | H01L 27/24 |
· | including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier [2]

|  | H01L 27/26 |
· | including bulk negative resistance effect components [2]

|  | H01L 29/00 |
Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 31/00-H01L 47/00 take precedence; processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof Fulltext... Hierarchy... Expanded...H01L 21/00; details other than of semiconductor bodies or of electrodes thereof Fulltext... Hierarchy... Expanded...H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; resistors in general Fulltext... Hierarchy... Expanded...H01C; capacitors in general Fulltext... Hierarchy... Expanded...H01G) [2]

|  | H01L 29/00 |
Note(s) Matter is classified both in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 29/02-H01L 29/64 and in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 29/66-H01L 29/96 so far as each of these sets of groups is relevant. [2]

|  | H01L 29/02 |
· | characterised by their semiconductor bodies [2]

|  | H01L 29/04 |
· · | characterised by their crystalline structure, e.g. polycrystalline, cubic, particular orientation of crystalline planes (imperfections Fulltext... Hierarchy... Expanded...H01L 29/30) [2]

|  | H01L 29/06 |
· · | characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions [2]

|  | H01L 29/08 |
· · · | with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]

|  | H01L 29/10 |
· · · | with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]

|  | H01L 29/12 |
· · | characterised by the materials of which they are formed [2]

|  | H01L 29/14 |
· · · | Inorganic materials [2]

|  | H01L 29/16 |
· · · · | including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form [2]

|  | H01L 29/161 |
· · · · · | including two or more of the elements provided for in Fulltext... Hierarchy... Expanded...H01L 29/16 [2]

|  | H01L 29/163 |
· · · · · · | in the same semiconductor region [2]

|  | H01L 29/165 |
· · · · · · | in different semiconductor regions [2]

|  | H01L 29/167 |
· · · · · | further characterised by the doping material [2]

|  | H01L 29/18 |
· · · · | Selenium or tellurium only, apart from doping materials or other impurities [2]

|  | H01L 29/20 |
· · · · | including, apart from doping materials or other impurities, only AIIIBV compounds [2]

|  | H01L 29/201 |
· · · · · | including two or more compounds [2]

|  | H01L 29/203 |
· · · · · · | in the same semiconductor region [2]

|  | H01L 29/205 |
· · · · · · | in different semiconductor regions [2]

|  | H01L 29/207 |
· · · · · | further characterised by the doping material [2]

|  | H01L 29/22 |
· · · · | including, apart from doping materials or other impurities, only AIIBVI compounds [2]

|  | H01L 29/221 |
· · · · · | including two or more compounds [2]

|  | H01L 29/223 |
· · · · · · | in the same semiconductor region [2]

|  | H01L 29/225 |
· · · · · · | in different semiconductor regions [2]

|  | H01L 29/227 |
· · · · · | further characterised by the doping material [2]

|  | H01L 29/24 |
· · · · | including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups Fulltext... Hierarchy... Expanded...H01L 29/16, Fulltext... Hierarchy... Expanded...H01L 29/18, Fulltext... Hierarchy... Expanded...H01L 29/20, Fulltext... Hierarchy... Expanded...H01L 29/22 [2]

|  | H01L 29/26 |
· · · · | including, apart from doping materials or other impurities, elements provided for in two or more of the groups Fulltext... Hierarchy... Expanded...H01L 29/16, Fulltext... Hierarchy... Expanded...H01L 29/18, Fulltext... Hierarchy... Expanded...H01L 29/20, Fulltext... Hierarchy... Expanded...H01L 29/22, Fulltext... Hierarchy... Expanded...H01L 29/24 [2]

|  | H01L 29/263 |
· · · · · | in the same semiconductor region [2]

|  | H01L 29/267 |
· · · · · | in different semiconductor regions [2]

|  | H01L 29/28 |
· · · | Organic materials [2]

|  | H01L 29/30 |
· · | characterised by physical imperfections; having polished or roughened surface [2]

|  | H01L 29/32 |
· · · | the imperfections being within the semiconductor body [2]

|  | H01L 29/34 |
· · · | the imperfections being on the surface [2]

|  | H01L 29/36 |
· · | characterised by the concentration or distribution of impurities [2]

|  | H01L 29/38 |
· · | characterised by combination of features provided for in two or more of the groups Fulltext... Hierarchy... Expanded...H01L 29/04, Fulltext... Hierarchy... Expanded...H01L 29/06, Fulltext... Hierarchy... Expanded...H01L 29/12, Fulltext... Hierarchy... Expanded...H01L 29/30, Fulltext... Hierarchy... Expanded...H01L 29/36 [2]

|  | H01L 29/40 |
· | characterised by their electrodes [2]

|  | H01L 29/42 |
· · | carrying the current to be rectified, amplified, or switched and such electrodes being part of a semiconductor device which comprises one or two electrodes [2]

|  | H01L 29/44 |
· · · | characterised by their shapes, relative sizes, or dispositions [2]

|  | H01L 29/46 |
· · · | characterised by the materials of which they are formed [2]

|  | H01L 29/48 |
· · · | for surface barrier, e.g. Schottky barrier [2]

|  | H01L 29/50 |
· · | carrying the current to be rectified, amplified, or switched and such electrodes being part of a semiconductor device which comprises three or more electrodes [2]

|  | H01L 29/52 |
· · · | characterised by their shapes, relative sizes, or dispositions [2]

|  | H01L 29/54 |
· · · | characterised by the materials of which they are formed [2]

|  | H01L 29/56 |
· · · | for surface barrier, e.g. Schottky barrier [2]

|  | H01L 29/58 |
· · | not carrying the current to be rectified, amplified, or switched and such electrodes being part of a semiconductor device which comprises three or more electrodes [2]

|  | H01L 29/60 |
· · · | characterised by their shapes, relative sizes, or dispositions [2]

|  | H01L 29/62 |
· · · | characterised by the material of which they are formed [2]

|  | H01L 29/64 |
· · · | for surface barrier, e.g. Schottky barrier [2]

|  | H01L 29/66 |
· | characterised by their operation [2]

|  | H01L 29/68 |
· · | controllable only by the electric current supplied, or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched [2]

|  | H01L 29/70 |
· · · | Bipolar devices [2]

|  | H01L 29/72 |
· · · · | continuously controllable [2]

|  | H01L 29/74 |
· · · · | not continuously controllable, e.g. thyristors [2]

|  | H01L 29/743 |
· · · · · | Reverse blocking thyristors [2]

|  | H01L 29/747 |
· · · · · | Bidirectional thyristors [2]

|  | H01L 29/76 |
· · · | Unipolar devices, e.g. field-effect transistors [2]

|  | H01L 29/78 |
· · · · | with field effect produced by an insulated gate [2]

|  | H01L 29/80 |
· · · · | with field effect produced by a PN or other rectifying junction gate [2]

|  | H01L 29/82 |
· · | controllable only by variation of the magnetic field applied to the device [2]

|  | H01L 29/84 |
· · | controllable only by variation of applied mechanical force, e.g. of pressure [2]

|  | H01L 29/86 |
· · | non-controllable; controllable only by variation of the electric current supplied, or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched [2]

|  | H01L 29/88 |
· · · | Tunnel diodes [2]

|  | H01L 29/90 |
· · · | Breakdown diodes, e.g. Zener diodes, avalanche diodes [2]

|  | H01L 29/91 |
· · · | Rectifier diodes [2]

|  | H01L 29/92 |
· · · | Capacitors with potential-jump barrier or surface barrier [2]

|  | H01L 29/93 |
· · · · | Variable-capacitance diodes, e.g. varactors [2]

|  | H01L 29/94 |
· · · · | Metal-insulator-semiconductors, e.g. MOS [2]

|  | H01L 29/95 |
· · · · | Ceramic barrier-layer capacitors (ceramic capacitors in general Fulltext... Hierarchy... Expanded...H01G) [2]

|  | H01L 29/96 |
· · | controllable by methods provided for in at least two of the groups Fulltext... Hierarchy... Expanded...H01L 29/68, Fulltext... Hierarchy... Expanded...H01L 29/82, Fulltext... Hierarchy... Expanded...H01L 29/84, Fulltext... Hierarchy... Expanded...H01L 29/86 [2]

|  | H01L 31/00 |
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, Fulltext... Hierarchy... Expanded...H01L 27/00; measurement of nuclear or X-radiation with semiconductor detectors Fulltext... Hierarchy... Expanded...G01T 1/24, with resistance detectors Fulltext... Hierarchy... Expanded...G01T 1/26; obtaining energy from radioactive sources Fulltext... Hierarchy... Expanded...G21H) [2]

|  | H01L 31/02 |
· | Details [2]

|  | H01L 31/04 |
· | adapted as conversion devices [2]

|  | H01L 31/06 |
· · | characterised by at least one potential-jump barrier or surface barrier [2]

|  | H01L 31/08 |
· | in which radiation controls flow of current through the device, e.g. photoresistors [2]

|  | H01L 31/10 |
· · | characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors [2]

|  | H01L 31/12 |
· | structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (amplifiers using electroluminescent element and photocell Fulltext... Hierarchy... Expanded...H03F 17/00; electroluminescent light sources per se Fulltext... Hierarchy... Expanded...H05B 33/00) [2]

|  | H01L 31/14 |
· · | the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices [2]

|  | H01L 31/16 |
· · | the semiconductor device sensitive to radiation being controlled by the light source or sources [2]

|  | H01L 31/18 |
· | Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto Fulltext... Hierarchy... Expanded...H01L 21/00) [2]

|  | H01L 33/00 |
Semiconductor devices with at least one potential-jump barrier or surface barrier adapted for light emission, e.g. infra-red; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (semiconductor lasers with potential-jump barrier or surface barrier Fulltext... Hierarchy... Expanded...H01S 3/19; electroluminescent light sources in general Fulltext... Hierarchy... Expanded...H05B 33/00) [2]

|  | H01L 35/00 |
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; refrigerating machines using electric or magnetic effects Fulltext... Hierarchy... Expanded...F25B 21/00; thermometers using thermoelectric or thermomagnetic elements Fulltext... Hierarchy... Expanded...G01K 7/00; obtaining energy from radioactive sources Fulltext... Hierarchy... Expanded...G21H) [2]

|  | H01L 35/02 |
· | Details [2]

|  | H01L 35/04 |
· · | Structural details of the junction; Connections of leads [2]

|  | H01L 35/06 |
· · · | detachable, e.g. using a spring [2]

|  | H01L 35/08 |
· · · | non-detachable, e.g. cemented, sintered, soldered [2]

|  | H01L 35/10 |
· · · | Connections of leads [2]

|  | H01L 35/12 |
· | Selection of the material for the legs of the junction [2]

|  | H01L 35/14 |
· · | using inorganic compositions [2]

|  | H01L 35/16 |
· · · | comprising tellurium or selenium or sulphur [2]

|  | H01L 35/18 |
· · · | comprising arsenic or antimony or bismuth (Fulltext... Hierarchy... Expanded...H01L 35/16 takes precedence) [2]

|  | H01L 35/20 |
· · · | comprising metals only (Fulltext... Hierarchy... Expanded...H01L 35/16, Fulltext... Hierarchy... Expanded...H01L 35/18 take precedence) [2]

|  | H01L 35/22 |
· · · | comprising compounds containing boron, carbon, oxygen, or nitrogen [2]

|  | H01L 35/24 |
· · | using organic compositions [2]

|  | H01L 35/26 |
· · | using compositions changing continuously or discontinuously inside the material [2]

|  | H01L 35/28 |
· | operating with Peltier or Seebeck effect only [2]

|  | H01L 35/30 |
· · | characterised by the heat-exchanging means at the junction [2]

|  | H01L 35/32 |
· · | characterised by the structure or configuration of the cell or thermo-couple forming the device [2]

|  | H01L 35/34 |
· | Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto Fulltext... Hierarchy... Expanded...H01L 21/00) [2]

|  | H01L 37/00 |
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; thermometers using thermoelectric or thermomagnetic elements Fulltext... Hierarchy... Expanded...G01K 7/00; selection of materials for magnetography, e.g. for Curie-point writing Fulltext... Hierarchy... Expanded...G03G 5/00) [2]

|  | H01L 37/02 |
· | using thermal change of dielectric constant, e.g. working above and below the Curie point [2]

|  | H01L 37/04 |
· | using thermal change of magnetic permeability, e.g. working above and below the Curie point [2]

|  | H01L 39/00 |
Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; superconductive coils or windings Fulltext... Hierarchy... Expanded...H01F; amplifiers using superconductivity Fulltext... Hierarchy... Expanded...H03F 19/00) [2]

|  | H01L 39/02 |
· | Details [2]

|  | H01L 39/04 |
· · | Containers; Mountings [2]

|  | H01L 39/06 |
· · | characterised by the current path [2]

|  | H01L 39/08 |
· · | characterised by the shape of the element [2]

|  | H01L 39/10 |
· · | characterised by the means for switching [2]

|  | H01L 39/12 |
· · | characterised by the material [2]

|  | H01L 39/14 |
· | Permanent superconductor devices [2]

|  | H01L 39/16 |
· | Devices switchable between superconductive and normal states [2]

|  | H01L 39/18 |
· · | Cryotrons [2]

|  | H01L 39/20 |
· · · | Power cryotrons [2]

|  | H01L 39/22 |
· | Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices [2]

|  | H01L 39/24 |
· | Processes or apparatus peculiar to the manufacture or treatment of devices provided for in group Fulltext... Hierarchy... Expanded...H01L 39/00 or of parts thereof (not peculiar thereto Fulltext... Hierarchy... Expanded...H01L 21/00) [2]

|  | H01L 41/00 |
Piezo-electric devices; Electrostrictive devices; Magnetostrictive devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; use of transducers as sensing elements for measuring Fulltext... Hierarchy... Expanded...G01, Fulltext... Hierarchy... Expanded...G04; electromechanical resonators Fulltext... Hierarchy... Expanded...H03H; magnetostrictive transducers for electric communication Fulltext... Hierarchy... Expanded...H04R 15/00; piezo-electric or electrostrictive transducers for electrical communication Fulltext... Hierarchy... Expanded...H04R 17/00) [2]

|  | H01L 41/02 |
· | Details [2]

|  | H01L 41/04 |
· · | of piezo-electric or electrostrictive devices [2]

|  | H01L 41/06 |
· · | of magnetostrictive devices [2]

|  | H01L 41/08 |
· | Piezo-electric or electrostrictive devices [2]

|  | H01L 41/10 |
· · | adapted for use as transducers [2]

|  | H01L 41/12 |
· | Magnetostrictive devices [2]

|  | H01L 41/14 |
· · | adapted for use as transducers [2]

|  | H01L 41/16 |
· | Selection of materials [2]

|  | H01L 41/18 |
· · | for piezo-electric or electrostrictive devices [2]

|  | H01L 41/20 |
· · | for magnetostrictive devices [2]

|  | H01L 41/22 |
· | Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto Fulltext... Hierarchy... Expanded...H01L 21/00) [2]

|  | H01L 43/00 |
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field Fulltext... Hierarchy... Expanded...H01L 29/82) [2]

|  | H01L 43/02 |
· | Details [2]

|  | H01L 43/04 |
· · | of Hall-effect devices [2]

|  | H01L 43/06 |
· | Hall-effect devices [2]

|  | H01L 43/08 |
· | Magnetic-field-controlled resistors [2]

|  | H01L 43/10 |
· | Selection of materials [2]

|  | H01L 43/12 |
· | Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto Fulltext... Hierarchy... Expanded...H01L 21/00) [2]

|  | H01L 43/14 |
· · | for Hall-effect devices [2]

|  | H01L 45/00 |
Solid state devices adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00; devices using superconductivity Fulltext... Hierarchy... Expanded...H01L 39/00; piezo-electric devices Fulltext... Hierarchy... Expanded...H01L 41/00; bulk negative resistance effect devices Fulltext... Hierarchy... Expanded...H01L 47/00) [2]

|  | H01L 45/02 |
· | Solid state travelling-wave devices [2]

|  | H01L 47/00 |
Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00) [2]

|  | H01L 47/02 |
· | Gunn-effect devices [2]

|  | H01L 49/00 |
Solid state devices not provided for in groups Fulltext... Hierarchy... Expanded...Fulltext... Hierarchy... Expanded...H01L 27/00-H01L 47/00 and not provided for in any other sub-class; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate Fulltext... Hierarchy... Expanded...H01L 27/00) [2]

|  | H01L 49/02 |
· | Thin-film or thick-film circuits [2]