G
SECTION G — PHYSICS
  
INSTRUMENTS
 G11
INFORMATION STORAGE
 G11C
STATIC STORES (recording and playback of information by relative movement between a record track and a transducer G11B; pulse technique in general H03K, e.g. electronic switches H03K 17/00)
 G11C

Note(s)

  1. This sub-class deals with devices or arrangements for storage of digital or analogue information:
    1. in which no relative movement takes place between an information storage element and a transducer;
    2. which incorporate a selecting-device for writing-in or reading-out the information into or from the store.
  2. In this sub-class, a storage element is provided with means for writing-in and reading-out at least one item of information. Elements not adapted for storage and not provided with such means are classified in the appropriate sub-class, e.g. of H01, H03K.
 G11C 5/00
Details of stores covered by G11C 11/00
 G11C 5/02
·  Disposition of storage elements, e.g. in the form of a matrix array
 G11C 5/04
·  ·  Supports for storage elements; Mounting or fixing of storage elements on such supports
 G11C 5/05
·  ·  ·  Supporting of cores in matrix  [2]
 G11C 5/06
·  Arrangements for interconnecting storage elements electrically, e.g. by wiring
 G11C 5/08
·  ·  for interconnecting magnetic elements, e.g. toroidal cores
 G11C 5/10
·  ·  for interconnecting capacitors
 G11C 5/12
·  Apparatus or processes for interconnecting storage elements, e.g. for threading magnetic cores
 G11C 7/00
Arrangements for writing information into, or reading information out from, a digital store (G11C 5/00, G11C 11/00 take precedence)  [2]
 G11C 7/02
·  with means for avoiding parasitic signals
 G11C 7/04
·  with means for avoiding disturbances due to temperature effects
 G11C 7/06
·  Adaptations of amplifiers (amplifiers per se H03F, H03K)
 G11C 8/00
Arrangements for selecting an address in a digital store  [2]
 G11C 8/02
·  using selecting matrix  [2]
 G11C 9/00
Transmission of digital information between stores, e.g. of different types (in digital computing arrangements G06F 13/00)
 G11C 9/02
·  Transfer between registers  [2]
 G11C 9/04
·  Transfer between location-addressed stores  [2]
 G11C 9/06
·  ·  with hierarchically-ordered stores, e.g. between scratchpad and main store, between fast and slow stores, between small working stores and bulk stores; Block transfer, paging  [2]
 G11C 9/08
·  between content-addressed and location-addressed stores  [2]
 G11C 11/00
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C 15/00-G11C 21/00 take precedence)
 G11C 11/02 - 
G11C 11/54

Note(s)

Group G11C 11/56 takes precedence over groups G11C 11/02-G11C 11/54[2]

 G11C 11/02
·  using magnetic elements
 G11C 11/04
·  ·  using storage elements having cylindrical form, e.g. rod, wire (G11C 11/12, G11C 11/14 take precedence)  [2]
 G11C 11/06
·  ·  using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
 G11C 11/061
·  ·  ·  using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out  [2]
 G11C 11/063
·  ·  ·  ·  bit-organised, such as, 2 L/2 D-, 3D-organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing  [2]
 G11C 11/065
·  ·  ·  ·  word-organised, such as 2 D-organisation, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading  [2]
 G11C 11/067
·  ·  ·  using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out  [2]
 G11C 11/08
·  ·  using multi-aperture storage elements, e.g. using transfluxors; using plates incorporating several individual multi-aperture storage elements (G11C 11/10 takes precedence; using multi-aperture plates in which each individual aperture forms a storage element G11C 11/06)  [2]
 G11C 11/10
·  ·  using multi-axial storage elements
 G11C 11/12
·  ·  using tensors; using twistors, i.e. elements in which one axis of magnetisation is twisted
 G11C 11/14
·  ·  using thin-film elements
 G11C 11/15
·  ·  ·  using multiple magnetic layers (G11C 11/155 takes precedence)  [2]
 G11C 11/155
·  ·  ·  with cylindrical configuration  [2]
 G11C 11/16
·  ·  using elements in which the storage effect is based on magnetic spin effect
 G11C 11/18
·  using Hall-effect devices
 G11C 11/19
·  using non-linear reactive devices in resonant circuits  [2]
 G11C 11/20
·  ·  using parametrons  [2]
 G11C 11/21
·  using electric elements  [2]
 G11C 11/22
·  ·  using ferroelectric elements  [2]
 G11C 11/23
·  ·  using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (G11C 11/22 takes precedence)  [2]
 G11C 11/24
·  ·  using capacitors (G11C 11/22 takes precedence)  [2]
 G11C 11/26
·  ·  using discharge tubes  [2]
 G11C 11/28
·  ·  ·  using gas-filled tubes  [2]
 G11C 11/30
·  ·  ·  using vacuum tubes (G11C 11/23 takes precedence)  [2]
 G11C 11/32
( transferred to G11C 11/23 )
 G11C 11/34
·  ·  using semiconductor devices  [2]
 G11C 11/36
·  ·  ·  using diodes, e.g. as threshold elements  [2]
 G11C 11/38
·  ·  ·  ·  using tunnel diodes  [2]
 G11C 11/40
·  ·  ·  using transistors  [2]
 G11C 11/42
·  ·  using electro-optical elements  [2]
 G11C 11/44
·  ·  using super-conductive elements, e.g. cryotron  [2]
 G11C 11/46
·  using thermoplastic elements
 G11C 11/48
·  using displaceable coupling elements, e.g. ferromagnetic cores, to produce change between different states of mutual or self-inductance
 G11C 11/50
·  using actuation of electric contacts to store the information (mechanical stores G11C 23/00; switches providing a selected number of consecutive operations of the contacts by a single manual actuation of the operating part H01H 41/00)
 G11C 11/52
·  ·  using electromagnetic relays
 G11C 11/54
·  using elements simulating biological cells, e.g. neuron
 G11C 11/56
·  Storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency (counting arrangements comprising multi-stable elements of this type H03K 25/00, H03K 29/00)  [2]
 G11C 13/00
Digital stores characterised by the use of storage elements not covered by groups G11C 11/00, G11C 23/00, or G11C 25/00
 G11C 13/02
·  using elements whose operation depends upon chemical change (using electrochemical charge G11C 11/00)
 G11C 13/04
·  using optical elements
 G11C 13/06
·  ·  using magneto-optical elements (magneto-optics in general G02F)  [2]
 G11C 13/08
·  ·  using electro-optical elements (electro-optics in general G02F)  [2]
 G11C 15/00
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (in which information is addressed to a specific location G11C 11/00)  [2]
 G11C 15/02
·  using magnetic elements  [2]
 G11C 15/04
·  using semiconductor elements  [2]
 G11C 15/06
·  using cryogenic elements  [2]
 G11C 17/00
Permanent stores with provision only for reading-out of information, i.e. read-only memories; Semi-permanent stores, e.g. manually-replaceable information cards (coders, decoders H03K 13/24)  [2]
 G11C 17/02
·  using magnetic or inductive elements or coupling  [2]
 G11C 17/04
·  using capacitive elements or coupling (G11C 17/06 takes precedence)  [2]
 G11C 17/06
·  using diode elements or coupling  [2]
 G11C 19/00
Digital stores in which the information is moved stepwise, e.g. shift register (counting chains H03K 23/00)  [2]
 G11C 19/02
·  using magnetic elements (G11C 19/14 takes precedence)  [2]
 G11C 19/04
·  ·  using cores with one aperture or magnetic loop  [2]
 G11C 19/06
·  ·  using structures with a number of apertures or magnetic loops, e.g. transfluxors  [2]
 G11C 19/08
·  ·  using thin films in plane structure  [2]
 G11C 19/10
·  ·  using thin films on rods; with twistors  [2]
 G11C 19/12
·  using non-linear reactive devices in resonant circuits  [2]
 G11C 19/14
·  using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements  [2]
 G11C 19/18
·  using capacitors as main elements of the stages  [2]
 G11C 19/20
·  using discharge tubes (G11C 19/14 takes precedence)  [2]
 G11C 19/28
·  using semiconductor elements (G11C 19/14 takes precedence)  [2]
 G11C 19/30
·  using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled  [2]
 G11C 19/32
·  using super-conductive elements  [2]
 G11C 21/00
Digital stores in which the information circulates (stepwise G11C 19/00)
 G11C 21/02
·  using electromechanical delay lines, e.g. using a mercury tank
 G11C 23/00
Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (storing by actuating contacts G11C 11/48)
 G11C 25/00
Digital stores characterised by the use of flowing media; Storage elements therefor
 G11C 27/00
Electric analogue stores, e.g. for storing instantaneous values
 G11C 27/02
·  Sample-and-hold arrangements  [2]
 G11C 29/00
Checking stores for correct operation