|  | H |
SECTION H — ELECTRICITY

|  | H01 |
BASIC ELECTRIC ELEMENTS

|  | H01 |
Note(s) Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.

|  | H01L |
SEMICONDUCTOR DEVICES (adapted as electroluminescent light sources Fulltext... Hierarchy... Expanded...H05B 33/00; electrolytic devices Fulltext... Hierarchy... Expanded...H01G 9/00; thermo-electric devices Fulltext... Hierarchy... Expanded...H01V 1/00, Fulltext... Hierarchy... Expanded...H01V 3/00)

|  | H01L |
Note(s) Semiconductor devices as interpreted in this sub-class comprise inherently at least one potential-jump barrier which is essential to the desired operation of the device and which separates regions of different conductivity type, at least one region having P, P+, N, N+, I or S type conductivity.

|  | H01L 1/00 |
Details of semiconductor devices

|  | H01L 1/02 |
· | Containers (for assemblages of two or more semiconductor devices Fulltext... Hierarchy... Expanded...H01L 1/16); Windows; Selection of substances for fillings; Encapsulation

|  | H01L 1/04 |
· · | characterised by the material of container or window

|  | H01L 1/06 |
· · | Containers in which the semiconductor device is mounted directly and conductively on the container wall, e.g. for power devices

|  | H01L 1/08 |
· · | Containers, having all walls consisting entirely of electrically insulating material, e.g. all-glass containers

|  | H01L 1/10 |
· · | Selection of substances for fillings, e.g. gas fillings; Embedding or encapsulating arrangements; Protective layers; Means for absorbing moisture or gas

|  | H01L 1/12 |
· | Cooling arrangements (by structure of or parts fastened to container Fulltext... Hierarchy... Expanded...H01L 1/02, Fulltext... Hierarchy... Expanded...H01L 1/16; by use of fillings Fulltext... Hierarchy... Expanded...H01L 1/10); Heating arrangements; Ventilating arrangements

|  | H01L 1/14 |
· | Connections, e.g. lead; Terminal arrangements

|  | H01L 1/16 |
· | Assemblages of two or more semiconductor devices

|  | H01L 1/18 |
· · | the devices not having separate containers

|  | H01L 1/20 |
· · · | Apertured devices mounted on one or more rods passing through the apertures

|  | H01L 1/22 |
· · · | Stacked arrangements of non-apertured devices

|  | H01L 1/24 |
· | Circuit arrangements not adapted to a particular application of the device, e.g. for temperature compensation

|  | H01L 3/00 |
Semiconductor devices characterised by the material of the region or regions of P, P+, N, N+, I or S type conductivity; Selection of materials specifically for semiconductor devices, such materials having P, P+, N, N+, I or S type conductivity; Semiconductor devices further characterised by the material of a contact electrode which co-operates with a body of material having P, P +, N, N+, I or S type conductivity; Semiconductor devices further characterised by the material of one or ore separate insulating layers between such body and such contact electrode

|  | H01L 3/02 |
· | with elements only of the sixth group of the Periodic System as the fundamental material, e.g. selenium, tellurium

|  | H01L 3/04 |
· · | using selenium in the form of a layer or of superimposed layers

|  | H01L 3/06 |
· · | characterised by the material of foundation plate

|  | H01L 3/08 |
· · | characterised by the material of counter-electrode

|  | H01L 3/10 |
· · | characterised by the material of non-genetic barrier layer

|  | H01L 3/12 |
· | with elements only of the fourth group of the Periodic System as the fundamental material, e.g. germanium, silicon

|  | H01L 3/14 |
· · | further characterised by the doping material

|  | H01L 3/16 |
· | with only inorganic compounds as the fundamental material

|  | H01L 3/18 |
· · | with cuprous oxide; with cuprous iodide

|  | H01L 3/20 |
· · | with AIIIBV, AIIBVI or AIBVII compounds (with cuprous iodide Fulltext... Hierarchy... Expanded...H01L 3/18)

|  | H01L 3/22 |
· · · | further characterised by the doping material

|  | H01L 3/24 |
· | with only organic compounds as the fundamental material

|  | H01L 5/00 |
Semiconductor devices characterised by the shape of body of material having, P, P+, N, N+, I or S type conductivity by the spatial distribution of the regions of different type conductivity therein, or by the shape of contact electrode or insulating layer between such body and such contact electrode

|  | H01L 5/02 |
· | Shape of contact electrode or of part of body associated therewith

|  | H01L 5/04 |
· · | for point or knife contact electrodes

|  | H01L 5/06 |
· · | with insulating layer between contact electrode and body

|  | H01L 7/00 |
Semiconductor devices characterised by the manner of their manufacture or treatment; Apparatus or processes uniquely adapted to the manufacture or treatment of semiconductor devices or parts therof (processes involving only a single technical art for which provision exists elsewhere, see the relevant class for the process, e.g. Fulltext... Hierarchy... Expanded...C23C)

|  | H01L 7/02 |
· | Manufacture of potential-jump barriers or rectifying connections to regions of P, P+, N, N+, I or S type conductivity; Manufacture of connections to regions of P, P +, N, N+, I or S type conductivity in such a manner, e.g. by providing an intermediate region of N+ or P+ type conductivity, as to prevent the connection from having rectifying properties, i.e. manufacture of ohmic contacts; Combined processes including the step of producing the potential-jump barriers

|  | H01L 7/04 |
· · | for devices having selenium or tellurium in elemental form

|  | H01L 7/06 |
· · · | Preparation of the foundation plate

|  | H01L 7/08 |
· · · | Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

|  | H01L 7/10 |
· · · · | Converting the selenium or tellurium to the conductive state

|  | H01L 7/12 |
· · · · | Treatment of the surface of selenium layer after having been made conductive

|  | H01L 7/14 |
· · · · | Providing discrete insulating barrier layers, i.e. non-genetic barrier layers

|  | H01L 7/16 |
· · · | Applying an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

|  | H01L 7/18 |
· · · | Treatment of the completed device, e.g. by electroforming

|  | H01L 7/20 |
· · · · | using an artificial ageing process

|  | H01L 7/22 |
· · | for devices having cuprous oxide or cuprous iodide

|  | H01L 7/24 |
· · · | Preparation of the foundation plate

|  | H01L 7/26 |
· · · | Applying an electrode to the exposed surface of the cuprous oxide or iodide after the formation of the oxide or iodide on the foundation plate

|  | H01L 7/28 |
· · · | Treatment of the completed device, e.g. by electroforming

|  | H01L 7/30 |
· · · · | using an artificial ageing process

|  | H01L 7/32 |
· · | for devices having a fundamental material other than elemental selenium, elemental tellurium, cuprous oxide, or cuprous iodide

|  | H01L 7/34 |
· · · | for devices having elemental germanium or elemental silicon or AIIIBV compound as the fundamental material

|  | H01L 7/36 |
· · · · | using reduction or decomposition of a gaseous compound yielding a solid condensate

|  | H01L 7/38 |
· · · · | using growth on a stationary seed crystal in a melt

|  | H01L 7/40 |
· · · · | using crystal-pulling from a melt

|  | H01L 7/42 |
· · · · | using zone-melting

|  | H01L 7/44 |
· · · · | using diffusion from a gaseous phase into a solid

|  | H01L 7/46 |
· · · · | using the melting and partial alloying of one solid laid upon another

|  | H01L 7/48 |
· · · · · | wherein an electric current passes through the materials to heat them, e.g. for applying contact electrodes

|  | H01L 7/50 |
· · · · | using non-electrical etching, corrosion, or erosion

|  | H01L 7/52 |
· · · · | using electrolytic deposition or electrolytic etching

|  | H01L 7/54 |
· · · · | using bombardment with electrons or nuclear particles

|  | H01L 7/56 |
· · · · | using an electroforming process (wherein melting takes place Fulltext... Hierarchy... Expanded...H01L 7/48)

|  | H01L 7/58 |
· · · · | using an artificial ageing process

|  | H01L 7/60 |
· · · · | Positioning of contact electrodes during manufacture of the device

|  | H01L 7/62 |
· · · | for devices having a fundamental material other than elemental germanium or elemental silicon or an AIIIBV compound

|  | H01L 7/64 |
· | Concurrent or sequential manufacture of a plurality of semiconductor devices or parts thereof

|  | H01L 7/66 |
· · | Dividing a large piece of material without spoiling the properties of the region(s) of P, P+, N, N+, I or S type conductivity that it possesses

|  | H01L 7/68 |
· · | Machines or apparatus for manufacturing a plurality of semiconductor devices or parts thereof concurrently or at sequentially arranged operating stations

|  | H01L 9/00 - H01L 19/00 |
Devices characterised by their structure

|  | H01L 9/00 |
Semiconductor devices without separate control electrode, e.g. diodes for rectifying or switching, Zener diodes (double-base diodes Fulltext... Hierarchy... Expanded...H01L 11/14)

|  | H01L 9/02 |
· | Devices having a layer of elemental selenium or elemental tellurium, Devices having a layer of cuprous oxide or cuprous iodide

|  | H01L 9/04 |
· · | with electrodes having one or more apertures passing through the current-carrying surfaces thereof, for the purpose of mounting or assembling the device

|  | H01L 9/06 |
· | Multiple diodes having one electrode in common

|  | H01L 9/08 |
· | Point-contact devices

|  | H01L 9/10 |
· | Devices having a region of I-type or S type conductivity

|  | H01L 9/12 |
· | Devices having more than one PBN junction, e.g. rectifier having PNPN structure

|  | H01L 11/00 |
Semiconductor devices with tree electrodes, one of which may be used for controlling current flow between the other two

|  | H01L 11/02 |
· | Transistors having one or two point-contact electrodes

|  | H01L 11/04 |
· · | Transistors having two point-contact electrodes

|  | H01L 11/06 |
· | Transistors or other devices without point-contact electrode

|  | H01L 11/08 |
· · | having region of I-type or S-type conductivity

|  | H01L 11/10 |
· · | having PNPN structure, e.g. transistors with hook collector, rectifier with PNPN structure and control electrode

|  | H01L 11/12 |
· · | Drift transistors

|  | H01L 11/14 |
· · | Double-base diodes; Analogous transistors; Field-effect transistors (fieldistors Fulltext... Hierarchy... Expanded...H01C 7/14)

|  | H01L 13/00 |
Semiconductor devices with four or more electrodes (multiple two-electrode or three-electrode devices without interaction between the separate parts of the device Fulltext... Hierarchy... Expanded...H01L 9/00, Fulltext... Hierarchy... Expanded...H01L 11/00)

|  | H01L 13/02 |
· | having one or more point-contact electrodes

|  | H01L 13/04 |
· | Double-base transistors

|  | H01L 15/00 |
Semiconductor devices sensitive to radiant heat, light, electromagnetic radiation of a shorter wavelength, or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

|  | H01L 15/02 |
· | functioning as conversion devices, e.g. photovoltaic device

|  | H01L 15/04 |
· · | structurally associated with a one-way conducting device, e.g. for use in a solar battery

|  | H01L 15/06 |
· | functioning as control devices, e.g. photo-conductive device (photo-resistors Fulltext... Hierarchy... Expanded...H01C 7/08)

|  | H01L 15/08 |
· · | Point-contact devices, e.g. point-contact photo-transistor

|  | H01L 17/00 |
Semiconductor devices operating as image amplifiers or converters

|  | H01L 19/00 |
Monolithic integrated circuits comprising at least one semiconductor device or one piece of material exhibiting semiconductivity (making individual semiconductor devices Fulltext... Hierarchy... Expanded...H01L 7/00; printed circuit techniques Fulltext... Hierarchy... Expanded...H05K 1/00, Fulltext... Hierarchy... Expanded...H05K 3/00)