H
SECTION H — ELECTRICITY
 H01
BASIC ELECTRIC ELEMENTS
 H01

Note(s)

Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.

 H01V
ELECTRIC DEVICES EXHIBITING SPECIFIC PHYSICAL EFFECTS (exhibiting semiconductivity H01L; making crystals B01J 17/00)
 H01V

Note(s)

This sub-class deals with devices exhibiting thermo-electric, thermo-magnetic, galvano-magnetic, piezo-electric, electrostrictive, magnetostrictive, or superconductive effects.

 H01V 1/00
Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermo-magnetic effects; Assemblies thereof (thermometers in general G01K; refrigerating machines using electric or magnetic effects F25B 21/00)
 H01V 1/02
·  Details
 H01V 1/04
·  ·  Structural details of the junction; Connections of leds (in general H01R)
 H01V 1/06
·  ·  ·  detachable, e.g. using spring
 H01V 1/08
·  ·  ·  non-detachable, e.g. cemented, sintered
 H01V 1/10
·  ·  ·  Connections of leads
 H01V 1/12
·  ·  ·  ·  to semiconductor devices (connections to semiconductor material in general H01L)
 H01V 1/14
·  characterised by the selection of the material of the legs of the junction
 H01V 1/16
·  ·  using inorganic compositions, e.g. boride, nitride
 H01V 1/18
·  ·  ·  comprising tellurium or selenium or sulphur
 H01V 1/20
·  ·  ·  comprising arsenic or antimony or bismuth (H01V 1/18 takes precedence)
 H01V 1/22
·  ·  ·  comprising metals only (H01V 1/18, H01V 1/20 take precedence)
 H01V 1/24
·  ·  using organic compositions
 H01V 1/26
·  ·  using compositions changing continuously or discontinuously inside the thermo-electric material
 H01V 1/28
·  operating only with Peltier effect; operating only with Seebeck effect
 H01V 1/30
·  ·  characterised by the heat-exchanging means at the junction
 H01V 1/32
·  ·  characterised by the structure or configuration of the cell or thermocouple forming the device
 H01V 3/00
Thermo-electric devices without junction of dissimilar materials; Thermo-magnetic devices; Selection of materials therefor
 H01V 3/02
·  using thermal change of dielectric constant
 H01V 3/04
·  using thermal change of magnetic permeability, e.g. working above and below Curie point
 H01V 5/00
Devices exhibiting galvano-magnetic effects, e.g. Hall effect; Selection of materials therfor
 H01V 7/00
Piezo-electric devices; Electrostrictive devices; Selection of materials therefor (electromechanical resonators or transducers H03K, H04R)
 H01V 7/02
·  Selection of materials
 H01V 9/00
Magnetostrictive devices; Selection of materials therefor (electromechanical resonators or transducers H03K, H04R)
 H01V 9/02
·  Selection of materials
 H01V 11/00
Devices exhibiting superconductivity; Selection of materials therefor (coils for producing high magnetic flux H01F 7/22)
 H01V 11/02
·  Details
 H01V 11/04
·  ·  Casings; Mountings
 H01V 11/06
·  ·  characterised by the current path
 H01V 11/08
·  ·  characterised by the shape of the element
 H01V 11/10
·  ·  characterised by the means for switching
 H01V 11/12
·  ·  characterised by th selection of material
 H01V 11/14
·  Permanent superconductor devices
 H01V 11/16
·  Devices switchable between superconductive and normal states, e.g. cryotron