|  | H |
SECTION H — ELECTRICITY

|  | H01 |
BASIC ELECTRIC ELEMENTS

|  | H01 |
Note(s) Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.

|  | H01V |
ELECTRIC DEVICES EXHIBITING SPECIFIC PHYSICAL EFFECTS (exhibiting semiconductivity Fulltext... Hierarchy... Expanded...H01L; making crystals Fulltext... Hierarchy... Expanded...B01J 17/00)

|  | H01V |
Note(s) This sub-class deals with devices exhibiting thermo-electric, thermo-magnetic, galvano-magnetic, piezo-electric, electrostrictive, magnetostrictive, or superconductive effects.

|  | H01V 1/00 |
Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermo-magnetic effects; Assemblies thereof (thermometers in general Fulltext... Hierarchy... Expanded...G01K; refrigerating machines using electric or magnetic effects Fulltext... Hierarchy... Expanded...F25B 21/00)

|  | H01V 1/02 |
· | Details

|  | H01V 1/04 |
· · | Structural details of the junction; Connections of leds (in general Fulltext... Hierarchy... Expanded...H01R)

|  | H01V 1/06 |
· · · | detachable, e.g. using spring

|  | H01V 1/08 |
· · · | non-detachable, e.g. cemented, sintered

|  | H01V 1/10 |
· · · | Connections of leads

|  | H01V 1/12 |
· · · · | to semiconductor devices (connections to semiconductor material in general Fulltext... Hierarchy... Expanded...H01L)

|  | H01V 1/14 |
· | characterised by the selection of the material of the legs of the junction

|  | H01V 1/16 |
· · | using inorganic compositions, e.g. boride, nitride

|  | H01V 1/18 |
· · · | comprising tellurium or selenium or sulphur

|  | H01V 1/20 |
· · · | comprising arsenic or antimony or bismuth (Fulltext... Hierarchy... Expanded...H01V 1/18 takes precedence)

|  | H01V 1/22 |
· · · | comprising metals only (Fulltext... Hierarchy... Expanded...H01V 1/18, Fulltext... Hierarchy... Expanded...H01V 1/20 take precedence)

|  | H01V 1/24 |
· · | using organic compositions

|  | H01V 1/26 |
· · | using compositions changing continuously or discontinuously inside the thermo-electric material

|  | H01V 1/28 |
· | operating only with Peltier effect; operating only with Seebeck effect

|  | H01V 1/30 |
· · | characterised by the heat-exchanging means at the junction

|  | H01V 1/32 |
· · | characterised by the structure or configuration of the cell or thermocouple forming the device

|  | H01V 3/00 |
Thermo-electric devices without junction of dissimilar materials; Thermo-magnetic devices; Selection of materials therefor

|  | H01V 3/02 |
· | using thermal change of dielectric constant

|  | H01V 3/04 |
· | using thermal change of magnetic permeability, e.g. working above and below Curie point

|  | H01V 5/00 |
Devices exhibiting galvano-magnetic effects, e.g. Hall effect; Selection of materials therfor

|  | H01V 7/00 |
Piezo-electric devices; Electrostrictive devices; Selection of materials therefor (electromechanical resonators or transducers Fulltext... Hierarchy... Expanded...H03K, Fulltext... Hierarchy... Expanded...H04R)

|  | H01V 7/02 |
· | Selection of materials

|  | H01V 9/00 |
Magnetostrictive devices; Selection of materials therefor (electromechanical resonators or transducers Fulltext... Hierarchy... Expanded...H03K, Fulltext... Hierarchy... Expanded...H04R)

|  | H01V 9/02 |
· | Selection of materials

|  | H01V 11/00 |
Devices exhibiting superconductivity; Selection of materials therefor (coils for producing high magnetic flux Fulltext... Hierarchy... Expanded...H01F 7/22)

|  | H01V 11/02 |
· | Details

|  | H01V 11/04 |
· · | Casings; Mountings

|  | H01V 11/06 |
· · | characterised by the current path

|  | H01V 11/08 |
· · | characterised by the shape of the element

|  | H01V 11/10 |
· · | characterised by the means for switching

|  | H01V 11/12 |
· · | characterised by th selection of material

|  | H01V 11/14 |
· | Permanent superconductor devices

|  | H01V 11/16 |
· | Devices switchable between superconductive and normal states, e.g. cryotron