H
SECTION H — ELECTRICITY
 H01
BASIC ELECTRIC ELEMENTS
 H01

Note(s)

Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.

 H01L
SEMICONDUCTOR DEVICES (adapted as electroluminescent light sources H05B 33/00; electrolytic devices H01G 9/00; thermo-electric devices H01V 1/00, H01V 3/00)
 H01L

Note(s)

Semiconductor devices as interpreted in this sub-class comprise inherently at least one potential-jump barrier which is essential to the desired operation of the device and which separates regions of different conductivity type, at least one region having P, P+, N, N+, I or S type conductivity.

 H01L 1/00
Details of semiconductor devices
 H01L 1/02
·  Containers (for assemblages of two or more semiconductor devices H01L 1/16); Windows; Selection of substances for fillings; Encapsulation
 H01L 1/04
·  ·  characterised by the material of container or window
 H01L 1/06
·  ·  Containers in which the semiconductor device is mounted directly and conductively on the container wall, e.g. for power devices
 H01L 1/08
·  ·  Containers, having all walls consisting entirely of electrically insulating material, e.g. all-glass containers
 H01L 1/10
·  ·  Selection of substances for fillings, e.g. gas fillings; Embedding or encapsulating arrangements; Protective layers; Means for absorbing moisture or gas
 H01L 1/12
·  Cooling arrangements (by structure of or parts fastened to container H01L 1/02, H01L 1/16; by use of fillings H01L 1/10); Heating arrangements; Ventilating arrangements
 H01L 1/14
·  Connections, e.g. lead; Terminal arrangements
 H01L 1/16
·  Assemblages of two or more semiconductor devices
 H01L 1/18
·  ·  the devices not having separate containers
 H01L 1/20
·  ·  ·  Apertured devices mounted on one or more rods passing through the apertures
 H01L 1/22
·  ·  ·  Stacked arrangements of non-apertured devices
 H01L 1/24
·  Circuit arrangements not adapted to a particular application of the device, e.g. for temperature compensation
 H01L 3/00
Semiconductor devices characterised by the material of the region or regions of P, P+, N, N+, I or S type conductivity; Selection of materials specifically for semiconductor devices, such materials having P, P+, N, N+, I or S type conductivity; Semiconductor devices further characterised by the material of a contact electrode which co-operates with a body of material having P, P +, N, N+, I or S type conductivity; Semiconductor devices further characterised by the material of one or ore separate insulating layers between such body and such contact electrode
 H01L 3/02
·  with elements only of the sixth group of the Periodic System as the fundamental material, e.g. selenium, tellurium
 H01L 3/04
·  ·  using selenium in the form of a layer or of superimposed layers
 H01L 3/06
·  ·  characterised by the material of foundation plate
 H01L 3/08
·  ·  characterised by the material of counter-electrode
 H01L 3/10
·  ·  characterised by the material of non-genetic barrier layer
 H01L 3/12
·  with elements only of the fourth group of the Periodic System as the fundamental material, e.g. germanium, silicon
 H01L 3/14
·  ·  further characterised by the doping material
 H01L 3/16
·  with only inorganic compounds as the fundamental material
 H01L 3/18
·  ·  with cuprous oxide; with cuprous iodide
 H01L 3/20
·  ·  with AIIIBV, AIIBVI or AIBVII compounds (with cuprous iodide H01L 3/18)
 H01L 3/22
·  ·  ·  further characterised by the doping material
 H01L 3/24
·  with only organic compounds as the fundamental material
 H01L 5/00
Semiconductor devices characterised by the shape of body of material having, P, P+, N, N+, I or S type conductivity by the spatial distribution of the regions of different type conductivity therein, or by the shape of contact electrode or insulating layer between such body and such contact electrode
 H01L 5/02
·  Shape of contact electrode or of part of body associated therewith
 H01L 5/04
·  ·  for point or knife contact electrodes
 H01L 5/06
·  ·  with insulating layer between contact electrode and body
 H01L 7/00
Semiconductor devices characterised by the manner of their manufacture or treatment; Apparatus or processes uniquely adapted to the manufacture or treatment of semiconductor devices or parts therof (processes involving only a single technical art for which provision exists elsewhere, see the relevant class for the process, e.g. C23C)
 H01L 7/02
·  Manufacture of potential-jump barriers or rectifying connections to regions of P, P+, N, N+, I or S type conductivity; Manufacture of connections to regions of P, P +, N, N+, I or S type conductivity in such a manner, e.g. by providing an intermediate region of N+ or P+ type conductivity, as to prevent the connection from having rectifying properties, i.e. manufacture of ohmic contacts; Combined processes including the step of producing the potential-jump barriers
 H01L 7/04
·  ·  for devices having selenium or tellurium in elemental form
 H01L 7/06
·  ·  ·  Preparation of the foundation plate
 H01L 7/08
·  ·  ·  Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
 H01L 7/10
·  ·  ·  ·  Converting the selenium or tellurium to the conductive state
 H01L 7/12
·  ·  ·  ·  Treatment of the surface of selenium layer after having been made conductive
 H01L 7/14
·  ·  ·  ·  Providing discrete insulating barrier layers, i.e. non-genetic barrier layers
 H01L 7/16
·  ·  ·  Applying an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
 H01L 7/18
·  ·  ·  Treatment of the completed device, e.g. by electroforming
 H01L 7/20
·  ·  ·  ·  using an artificial ageing process
 H01L 7/22
·  ·  for devices having cuprous oxide or cuprous iodide
 H01L 7/24
·  ·  ·  Preparation of the foundation plate
 H01L 7/26
·  ·  ·  Applying an electrode to the exposed surface of the cuprous oxide or iodide after the formation of the oxide or iodide on the foundation plate
 H01L 7/28
·  ·  ·  Treatment of the completed device, e.g. by electroforming
 H01L 7/30
·  ·  ·  ·  using an artificial ageing process
 H01L 7/32
·  ·  for devices having a fundamental material other than elemental selenium, elemental tellurium, cuprous oxide, or cuprous iodide
 H01L 7/34
·  ·  ·  for devices having elemental germanium or elemental silicon or AIIIBV compound as the fundamental material
 H01L 7/36
·  ·  ·  ·  using reduction or decomposition of a gaseous compound yielding a solid condensate
 H01L 7/38
·  ·  ·  ·  using growth on a stationary seed crystal in a melt
 H01L 7/40
·  ·  ·  ·  using crystal-pulling from a melt
 H01L 7/42
·  ·  ·  ·  using zone-melting
 H01L 7/44
·  ·  ·  ·  using diffusion from a gaseous phase into a solid
 H01L 7/46
·  ·  ·  ·  using the melting and partial alloying of one solid laid upon another
 H01L 7/48
·  ·  ·  ·  ·  wherein an electric current passes through the materials to heat them, e.g. for applying contact electrodes
 H01L 7/50
·  ·  ·  ·  using non-electrical etching, corrosion, or erosion
 H01L 7/52
·  ·  ·  ·  using electrolytic deposition or electrolytic etching
 H01L 7/54
·  ·  ·  ·  using bombardment with electrons or nuclear particles
 H01L 7/56
·  ·  ·  ·  using an electroforming process (wherein melting takes place H01L 7/48)
 H01L 7/58
·  ·  ·  ·  using an artificial ageing process
 H01L 7/60
·  ·  ·  ·  Positioning of contact electrodes during manufacture of the device
 H01L 7/62
·  ·  ·  for devices having a fundamental material other than elemental germanium or elemental silicon or an AIIIBV compound
 H01L 7/64
·  Concurrent or sequential manufacture of a plurality of semiconductor devices or parts thereof
 H01L 7/66
·  ·  Dividing a large piece of material without spoiling the properties of the region(s) of P, P+, N, N+, I or S type conductivity that it possesses
 H01L 7/68
·  ·  Machines or apparatus for manufacturing a plurality of semiconductor devices or parts thereof concurrently or at sequentially arranged operating stations
 H01L 9/00 - 
H01L 19/00
Devices characterised by their structure
 H01L 9/00
Semiconductor devices without separate control electrode, e.g. diodes for rectifying or switching, Zener diodes (double-base diodes H01L 11/14)
 H01L 9/02
·  Devices having a layer of elemental selenium or elemental tellurium, Devices having a layer of cuprous oxide or cuprous iodide
 H01L 9/04
·  ·  with electrodes having one or more apertures passing through the current-carrying surfaces thereof, for the purpose of mounting or assembling the device
 H01L 9/06
·  Multiple diodes having one electrode in common
 H01L 9/08
·  Point-contact devices
 H01L 9/10
·  Devices having a region of I-type or S type conductivity
 H01L 9/12
·  Devices having more than one PBN junction, e.g. rectifier having PNPN structure
 H01L 11/00
Semiconductor devices with tree electrodes, one of which may be used for controlling current flow between the other two
 H01L 11/02
·  Transistors having one or two point-contact electrodes
 H01L 11/04
·  ·  Transistors having two point-contact electrodes
 H01L 11/06
·  Transistors or other devices without point-contact electrode
 H01L 11/08
·  ·  having region of I-type or S-type conductivity
 H01L 11/10
·  ·  having PNPN structure, e.g. transistors with hook collector, rectifier with PNPN structure and control electrode
 H01L 11/12
·  ·  Drift transistors
 H01L 11/14
·  ·  Double-base diodes; Analogous transistors; Field-effect transistors (fieldistors H01C 7/14)
 H01L 13/00
Semiconductor devices with four or more electrodes (multiple two-electrode or three-electrode devices without interaction between the separate parts of the device H01L 9/00, H01L 11/00)
 H01L 13/02
·  having one or more point-contact electrodes
 H01L 13/04
·  Double-base transistors
 H01L 15/00
Semiconductor devices sensitive to radiant heat, light, electromagnetic radiation of a shorter wavelength, or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
 H01L 15/02
·  functioning as conversion devices, e.g. photovoltaic device
 H01L 15/04
·  ·  structurally associated with a one-way conducting device, e.g. for use in a solar battery
 H01L 15/06
·  functioning as control devices, e.g. photo-conductive device (photo-resistors H01C 7/08)
 H01L 15/08
·  ·  Point-contact devices, e.g. point-contact photo-transistor
 H01L 17/00
Semiconductor devices operating as image amplifiers or converters
 H01L 19/00
Monolithic integrated circuits comprising at least one semiconductor device or one piece of material exhibiting semiconductivity (making individual semiconductor devices H01L 7/00; printed circuit techniques H05K 1/00, H05K 3/00)