 | | H01L 3/00 | Semiconductor devices characterised by the material of the region or regions of P, P+, N, N+, I or S type conductivity; Selection of materials specifically for semiconductor devices, such materials having P, P+, N, N+, I or S type conductivity; Semiconductor devices further characterised by the material of a contact electrode which co-operates with a body of material having P, P +, N, N+, I or S type conductivity; Semiconductor devices further characterised by the material of one or ore separate insulating layers between such body and such contact electrode |
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