IPC Definitions - January 01, 2012
G03F 1/36 - Definition
This group covers:
Subject matter of main group G03F 1/00 in which the patterned radiation modifying products are masks, where the mask has a pattern that includes a proximity correction feature or a changed dimension of a printing feature for improving a resulting printed pattern formed thereby (e.g., enhancing sub-resolution sized patterns, reducing side-lobe formation between closely spaced patterns); and in which the processes of preparing are directed to preparation of such masks having proximity correction features (e.g., optical proximity correction [OPC] design processes).
(1) Note. Proximity correction addresses problems resulting from the miniaturization of patterns for radiation modifying masks, which typically results in degradation of the pattern, with the degradation not being uniform between sorts of pattern such as, for example, a line-and-space pattern, an isolated pattern, etc.
(2) Note. The proximity correction features can be sub-resolution patterns (e.g. serifs, assist bars) or modified patterns (e.g. biased) to compensate for optical proximity effects in a basic layout of a mask pattern. Alternatively, the proximity correction features can be dummy patterns, which are placed in a vacant region of a mask pattern to reduce inhomogeneous processing due to proximity effects.
Attention is drawn to the following places, which may be of interest for search:
Adapting basic layout or design of a mask to a lithographic process requirement for preparation of masks without proximity correction features | G03F 1/70 |
Computer-aided design in general | G06F 17/50 |