IPC Definitions - January 01, 2012

G03F 1/70 - Definition fr

Definition statement

This group covers:

Subject matter of subgroup G03F 1/68 in which the preparation processes are for adapting basic layout of patterned radiation modifying products to a lithographic process requirement, which include methods for adapting, modifying or correcting of basic patterns for a radiation mask used for photomechanical production of textured or patterned surfaces (e.g. second iteration correction of mask pattern for imaging).

Informative references

Attention is drawn to the following places, which may be of interest for search:

Proximity correction layout or design processes for preparation of masks with proximity correction features, e.g. OPC features

G03F 1/36

Computer-aided design in general

G06F 17/50