IPC Definitions - January 01, 2012
G03F 1/70 - Definition
This group covers:
Subject matter of subgroup G03F 1/68 in which the preparation processes are for adapting basic layout of patterned radiation modifying products to a lithographic process requirement, which include methods for adapting, modifying or correcting of basic patterns for a radiation mask used for photomechanical production of textured or patterned surfaces (e.g. second iteration correction of mask pattern for imaging).
Attention is drawn to the following places, which may be of interest for search:
Proximity correction layout or design processes for preparation of masks with proximity correction features, e.g. OPC features | G03F 1/36 |
Computer-aided design in general | G06F 17/50 |