H
SECTION H — ELECTRICITY
 H

Note(s)

These Notes cover the basic principles and general instructions for use of section H.

  1. Section H covers:
    1. basic electric elements, which cover all electric units and the general mechanical structure of apparatus and circuits, including the assembly of various basic elements into what are called printed circuits and also cover to a certain extent the manufacture of these elements (when not covered elsewhere);
    2. generation of electricity, which covers the generation, conversion and distribution of electricity together with the controlling of the corresponding gear;
    3. applied electricity, which covers:
      1. general utilisation techniques, viz. those of electric heating and electric lighting circuits;
      2. some special utilisation techniques, either electric or electronic in the strict sense, which are not covered by other sections of the Classification, including:
        1. electric light sources, including lasers;
        2. electric X-ray technique;
        3. electric plasma technique and the generation and acceleration of electrically charged particles or neutrons;
    4. basic electronic circuits and their control;
    5. radio or electric communication technique;
    6. the use of a specified material for the manufacture of the article or element described. In this connection, paragraphs 88 to 90 of the Guide should be referred to.
  2. In this section, the following general rules apply:
    1. Subject to the exceptions stated in I(c), above, any electric aspect or part peculiar to a particular operation, process, apparatus, object or article, classified in one of the sections of the Classification other than section H, is always classified in the subclass for that operation, process, apparatus, object or article. Where common characteristics concerning technical subjects of similar nature have been brought out at class level, the electric aspect or part is classified, in conjunction with the operation, process, apparatus, object or article, in a subclass which covers entirely the general electrical applications for the technical subject in question;
    2. The electrical applications referred to under (a), above, either general or particular, include:
      1. the therapeutic processes and apparatus, in class A61;
      2. the electric processes and apparatus used in various laboratory or industrial operations, in classes B01 and B03 and in subclass B23K;
      3. the electricity supply, electric propulsion and electric lighting of vehicles in general and of particular vehicles, in the subsection "Transporting" of section B;
      4. the electric ignition systems of internal-combustion engines, in subclass F02P, and of combustion apparatus in general, in subclass F23Q;
      5. the whole electrical part of section G, i.e. measuring devices including apparatus for measuring electric variables, checking, signalling and calculating. Electricity in that section is generally dealt with as a means and not as an end in itself;
    3. All electrical applications, both general and particular, presuppose that the "basic electricity" aspect appears in section H (see I(a) above) as regards the electric "basic elements" which they comprise. This rule is also valid for applied electricity, referred to in I(c), above, which appears in section H itself.
  3. In this section, the following special cases occur:
    1. Among the general applications covered by sections other than section H, it is worth noting that electric heating in general is covered by subclasses F24D or F24H or class F27, and that electric lighting in general is partly covered by class F21, since in section H (see I(c), above) there are places in H05B which cover the same technical subjects;
    2. In the two cases referred to under (a), above, the subclasses of section F, which deal with the respective subjects, essentially cover in the first place the whole mechanical aspect of the apparatus or devices, whereas the electrical aspect, as such, is covered by subclass H05B;
    3. In the case of lighting, this mechanical aspect should be taken to cover the material arrangement of the various electric elements, i.e., their geometrical or physical position in relation to one another; this aspect is covered by subclass F21V, the elements themselves and the primary circuits remaining in section H. The same applies to electric light sources, when combined with light sources of a different kind. These are covered by subclass H05B, whereas the physical arrangement which their combination constitutes is covered by the various subclasses of class F21;
    4. As regards heating, not only the electric elements and circuitry designs, as such, are covered by subclass H05B, but also the electric aspects of their arrangement, where these concern cases of general application; electric furnaces being considered as such. The physical disposition of the electric elements in furnaces is covered by section F. If a comparison is made with electric welding circuits, which are covered by subclass B23K in connection with welding, it can be seen that electric heating is not covered by the general rule stated in II, above.

 H01
BASIC ELECTRIC ELEMENTS
 H01

Note(s)

  1. Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.
  2. Attention is drawn to the Notes following the titles of class B81 and subclass B81B relating to "micro-structural devices" and "micro-structural systems". [7]
 H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application)  [2]
 H01L

Note(s)

  1. This subclass covers:
    • electric solid state devices which are not covered by any other subclass and details thereof, and includes: semiconductor devices adapted for rectifying, amplifying, oscillating or switching; semiconductor devices sensitive to radiation; electric solid state devices using thermoelectric, superconductive, piezo-electric, electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and integrated circuit devices; [2]
    • photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes and thin-film or thick-film circuits; [2]
    • processes and apparatus adapted for the manufacture or treatment of such devices, except where such processes relate to single-step processes for which provision exists elsewhere. [2]
  2. In this subclass, the following terms or expressions are used with the meaning indicated:
    • "wafer" means a slice of semiconductor or crystalline substrate material, which can be modified by impurity diffusion (doping), ion implantation or epitaxy, and whose active surface can be processed into arrays of discrete components or integrated circuits; [8]
    • "solid state body" means the body of material within which, or at the surface of which, the physical effects characteristic of the device occur. In thermoelectric devices, it includes all materials in the current path.
    Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid state body electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto. An electrode may include several portions and the term includes metallic regions which exert influence on the solid state body through an insulating region (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, only those portions which exert an influence on the solid state body by virtue of their shape, size, or disposition or the material of which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangements for conducting electric current to or from the solid state body" or "interconnections between solid state components formed in or on a common substrate", i.e. leads; [2]
    • "device" means an electric circuit element; where an electric circuit element is one of a plurality of elements formed in or on a common substrate it is referred to as a "component"; [2]
    • "complete device" is a device in its fully assembled state which may or may not require further treatment, e.g. electroforming, before it is ready for use but which does not require the addition of further structural units; [2]
    • "parts" includes all structural units which are included in a complete device; [2]
    • "container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body of the device is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation"; [2]
    • "integrated circuit" is a device where all components, e.g. diodes, resistors, are built up on a common substrate and form the device including interconnections between the components; [2]
    • "assembly" of a device is the building up of the device from its component constructional units and includes the provision of fillings in containers. [2]
  3. In this subclass, both the process or apparatus for the manufacture or treatment of a device and the device itself are classified, whenever both of these are described sufficiently to be of interest. [6]
 H01L
Subclass index
SEMICONDUCTOR DEVICES
Devices adapted for rectifying, amplifying, oscillating, or switching 29/00
Devices sensitive to, or emitting, radiation 31/00, 33/00
SOLID STATE DEVICES USING ORGANIC MATERIALS 51/00
OTHER SOLID STATE DEVICES
Thermoelectric or thermomagnetic devices 35/00, 37/00
Superconductive or hyperconductive devices 39/00
Piezo-electric, electrostrictive or magnetostrictive elements in general 41/00
Galvano-magnetic devices 43/00
Devices without a potential-jump or a surface barrier; bulk negative resistance effect devices; devices not otherwise provided for 45/00; 47/00; 49/00
ASSEMBLIES OF SEMICONDUCTOR OR OTHER SOLID STATE DEVICES
Assemblies of individual devices 25/00
Integrated circuits 27/00
DETAILS 23/00
MANUFACTURE 21/00
P:150 H01L 21/00
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof  [2,8]
 H01L 21/02 - 
H01L 21/67

Note(s)

Group H01L 21/70 takes precedence over groups H01L 21/02-H01L 21/67[2]

 H01L 21/02
·  Manufacture or treatment of semiconductor devices or of parts thereof  [2,8]
 H01L 21/64
·  Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in groups H01L 31/00-H01L 51/00  [2,8]
 H01L 21/66
·  Testing or measuring during manufacture or treatment  [2]
 H01L 21/67
·  Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components  [8]
 H01L 21/70
·  Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00)  [2]
P:140 H01L 23/00
Details of semiconductor or other solid state devices (H01L 25/00 takes precedence)  [2,5]
 H01L 23/00

Note(s)

This group does not cover:

 H01L 23/02
·  Containers; Seals (H01L 23/12, H01L 23/34, H01L 23/48, H01L 23/552 take precedence)  [2,5]
 H01L 23/12
·  Mountings, e.g. non-detachable insulating substrates  [2]
 H01L 23/16
·  Fillings or auxiliary members in containers, e.g. centering rings (H01L 23/34, H01L 23/552 take precedence)  [2,5]
 H01L 23/28
·  Encapsulation, e.g. encapsulating layers, coatings (H01L 23/552 takes precedence)  [2,5]
 H01L 23/32
·  Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L 23/34 takes precedence)  [2,5]
 H01L 23/34
·  Arrangements for cooling, heating, ventilating or temperature compensation  [2,5]
 H01L 23/48
·  Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements  [2]
 H01L 23/52
·  Arrangements for conducting electric current within the device in operation from one component to another  [2]
 H01L 23/544
·  Marks applied to semiconductor devices, e.g. registration marks, test patterns  [5]
 H01L 23/552
·  Protection against radiation, e.g. light  [5]
 H01L 23/58
·  Structural electrical arrangements for semiconductor devices not otherwise provided for  [5]
P:0 H01L 25/00
Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectronic cells H01L 31/042)  [2,5]
 H01L 25/03
·  all the devices being of a type provided for in the same subgroup of groups H01L 27/00-H01L 51/00, e.g. assemblies of rectifier diodes  [5,8]
 H01L 25/04
·  ·  the devices not having separate containers  [2]
 H01L 25/065
·  ·  ·  the devices being of a type provided for in group H01L 27/00  [5]
 H01L 25/07
·  ·  ·  the devices being of a type provided for in group H01L 29/00  [5]
 H01L 25/075
·  ·  ·  the devices being of a type provided for in group H01L 33/00  [5]
 H01L 25/10
·  ·  the devices having separate containers  [2]
 H01L 25/16
·  the devices being of types provided for in two or more different main groups of groups H01L 27/00-H01L 51/00, e.g. forming hybrid circuits  [2,8]
 H01L 25/18
·  the devices being of types provided for in two or more different subgroups of the same main group of groups H01L 27/00-H01L 51/00  [5,8]
P:10 H01L 27/00
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00-H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00)  [2,8]
 H01L 27/01 - 
H01L 27/28

Note(s)

In groups H01L 27/01-H01L 27/28, in the absence of an indication to the contrary, classification is made in the last appropriate place. [2]

 H01L 27/01
·  comprising only passive thin-film or thick-film elements formed on a common insulating substrate  [3]
 H01L 27/02
·  including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier  [2]
 H01L 27/04
·  ·  the substrate being a semiconductor body  [2]
 H01L 27/06
·  ·  ·  including a plurality of individual components in a non-repetitive configuration  [2]
 H01L 27/07
·  ·  ·  ·  the components having an active region in common  [5]
 H01L 27/08
·  ·  ·  including only semiconductor components of a single kind  [2]
 H01L 27/082
·  ·  ·  ·  including bipolar components only  [5]
 H01L 27/085
·  ·  ·  ·  including field-effect components only  [5]
 H01L 27/10
·  ·  ·  including a plurality of individual components in a repetitive configuration  [2]
 H01L 27/102
·  ·  ·  ·  including bipolar components  [5]
 H01L 27/105
·  ·  ·  ·  including field-effect components  [5]
 H01L 27/108
·  ·  ·  ·  ·  Dynamic random access memory structures  [5]
 H01L 27/11
·  ·  ·  ·  ·  Static random access memory structures  [5]
 H01L 27/112
·  ·  ·  ·  ·  Read-only memory structures  [5]
 H01L 27/115
·  ·  ·  ·  ·  ·  Electrically programmable read-only memories  [5]
 H01L 27/118
·  ·  ·  ·  Masterslice integrated circuits  [5]
 H01L 27/12
·  ·  the substrate being other than a semiconductor body, e.g. an insulating body  [2]
 H01L 27/13
·  ·  ·  combined with thin-film or thick-film passive components  [3]
 H01L 27/14
·  including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42)  [2]
 H01L 27/142
·  ·  Energy conversion devices  [5]
 H01L 27/144
·  ·  Devices controlled by radiation  [5]
 H01L 27/146
·  ·  ·  Imager structures  [5]
 H01L 27/148
·  ·  ·  ·  Charge coupled imagers  [5]
 H01L 27/15
·  including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission  [2]
 H01L 27/16
·  including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/34)  [2]
 H01L 27/18
·  including components exhibiting superconductivity  [2]
 H01L 27/20
·  including piezo-electric components; including electrostrictive components; including magnetostrictive components  [2,7]
 H01L 27/22
·  including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects  [2]
 H01L 27/24
·  including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier  [2]
 H01L 27/26
·  including bulk negative resistance effect components  [2]
 H01L 27/28
·  including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part  [8]
P:120 H01L 29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00-H01L 47/00, H01L 51/05 take precedence; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)  [2,6]
 H01L 29/00

Note(s)

In this main group, classification is made in all of groups H01L 29/02, H01L 29/40 and H01L 29/66 if all of these groups are relevant. [2]

 H01L 29/02
·  Semiconductor bodies  [2]
 H01L 29/40
·  Electrodes  [2]
 H01L 29/66
·  Types of semiconductor device  [2]
P:110 H01L 31/00
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/42 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L 27/00)  [2,6,8]
 H01L 31/02
·  Details  [2]
 H01L 31/0203
·  ·  Containers; Encapsulations  [5]
 H01L 31/0216
·  ·  Coatings  [5]
 H01L 31/0224
·  ·  Electrodes  [5]
 H01L 31/0232
·  ·  Optical elements or arrangements associated with the device  [5]
 H01L 31/0236
·  ·  Special surface textures  [5]
 H01L 31/024
·  ·  Arrangements for cooling, heating, ventilating or temperature compensation  [5]
 H01L 31/0248
·  characterised by their semiconductor bodies  [5]
 H01L 31/0256
·  ·  characterised by the material  [5]
 H01L 31/0264
·  ·  ·  Inorganic materials  [5]
 H01L 31/036
·  ·  characterised by their crystalline structure or particular orientation of the crystalline planes  [5]
 H01L 31/04
·  adapted as conversion devices  [2]
 H01L 31/042
·  ·  including a panel or array of photoelectric cells, e.g. solar cells  [5]
 H01L 31/045
·  ·  ·  collapsible or foldable  [5]
 H01L 31/048
·  ·  ·  encapsulated or with housing  [5]
 H01L 31/05
·  ·  ·  characterised by special interconnection means  [5]
 H01L 31/052
·  ·  ·  with cooling, light-reflecting or light- concentrating means  [5]
 H01L 31/058
·  ·  ·  including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy  [5]
 H01L 31/06
·  ·  characterised by at least one potential-jump barrier or surface barrier  [2]
 H01L 31/08
·  in which radiation controls flow of current through the device, e.g. photoresistors  [2]
 H01L 31/10
·  ·  characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors  [2]
 H01L 31/101
·  ·  ·  Devices sensitive to infra-red, visible or ultra-violet radiation  [5]
 H01L 31/102
·  ·  ·  ·  characterised by only one potential barrier or surface barrier  [5]
 H01L 31/115
·  ·  ·  Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation  [5]
 H01L 31/12
·  structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (electroluminescent light sources per se H05B 33/00)  [2,5]
 H01L 31/14
·  ·  the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices  [2]
 H01L 31/16
·  ·  the semiconductor device sensitive to radiation being controlled by the light source or sources  [2]
 H01L 31/18
·  Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof  [2]
P:100 H01L 33/00
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L 51/50 takes precedence; devices consisting of a plurality of components formed in or on a common substrate H01L 27/15; semiconductor lasers H01S 5/00)  [2,8]
P:50 H01L 35/00
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)  [2]
 H01L 35/12
·  Selection of the material for the legs of the junction  [2]
 H01L 35/28
·  operating with Peltier or Seebeck effect only  [2]
 H01L 35/32
·  ·  characterised by the structure or configuration of the cell or thermo-couple forming the device  [2]
P:60 H01L 37/00
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)  [2]
P:30 H01L 39/00
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00)  [2,4]
 H01L 39/02
·  Details  [2]
 H01L 39/04
·  ·  Containers; Mountings  [2]
 H01L 39/12
·  ·  characterised by the material  [2]
 H01L 39/14
·  Permanent superconductor devices  [2]
 H01L 39/16
·  Devices switchable between superconductive and normal states  [2]
 H01L 39/22
·  Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices  [2]
 H01L 39/24
·  Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group H01L 39/00 or of parts thereof  [2]
P:70 H01L 41/00
Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)  [2]
 H01L 41/00

Note(s)

  1. This group does not cover adaptations for particular purposes, which are covered by the relevant places.  [6]
  2. Attention is drawn to the following such places:  [6]
    B06Bfor adaptations for generating or transmitting mechanical vibrations  [6] 
    G01for transducers as sensing elements for measuring  [6] 
    G04C, G04Ffor transducers adapted for use in time-pieces  [6] 
    G10Kfor adaptations for generating or transmitting sound  [6] 
    H02Nfor arrangements of elements in electric machines  [6] 
    H03H 9/00for networks comprising electro-mechanical or electro-acoustic elements, e.g. resonant circuits  [6] 
    H04Rfor loudspeakers, microphones, gramophone pick-ups or like transducers.  [6] 
 H01L 41/08
·  Piezo-electric or electrostrictive elements  [2]
 H01L 41/083
·  ·  having a stacked or multilayer structure  [6]
 H01L 41/087
·  ·  formed as coaxial cables  [6]
 H01L 41/09 - 
H01L 41/113

Note(s)

Groups H01L 41/083 and H01L 41/087 take precedence over groups H01L 41/09-H01L 41/113.  [6]

 H01L 41/09
·  ·  with electrical input and mechanical output  [5]
 H01L 41/107
·  ·  with electrical input and electrical output  [5]
 H01L 41/113
·  ·  with mechanical input and electrical output  [5]
 H01L 41/16
·  Selection of materials  [2]
 H01L 41/18
·  ·  for piezo-electric or electrostrictive elements  [2]
 H01L 41/22
·  Processes or apparatus specially adapted for the manufacture or treatment of these elements or of parts thereof  [2]
 H01L 41/24
·  ·  of elements of ceramic composition  [5]
P:80 H01L 43/00
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)  [2]
 H01L 43/06
·  Hall-effect devices  [2]
 H01L 43/08
·  Magnetic-field-controlled resistors  [2]
P:90 H01L 45/00
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00)  [2]
P:40 H01L 47/00
Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00)  [2]
P:130 H01L 49/00
Solid state devices not provided for in groups H01L 27/00-H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof  [2,8]
 H01L 49/02
·  Thin-film or thick-film devices  [2]
P:20 H01L 51/00
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezo-electric, electrostrictive or magnetostrictive elements using organic material H01L 41/00)  [6,8]
 H01L 51/05
·  specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier  [8]
 H01L 51/42
·  specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation  [8]
 H01L 51/50
·  specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) (organic semiconductor lasers H01S 5/00)  [8]