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<ipcEntries ipcLevel="a" split="subclass" languages=",en,fr," size="419324" displayMode="e20090101;a20090101;c20090101" targetSymbol="H01L0031000000" menulang="EN" level="a" indexes="no" deleted="yes" notes="yes" headings="yes" fulltext="yes" children="no" siblings="no" printheader="yes" adminFileName="" xmlFileName="" hidebuttons="yes"><ipcEntry kind="s" symbol="H" ipcLevel="C" entryType="K" lang="EN"><textBody>
			<title>
				<titlePart>
					<text>SECTION H <emdash/> ELECTRICITY</text>
				</titlePart>
			</title>
		</textBody><ipcEntry kind="n" symbol="H" ipcLevel="C" entryType="K" lang="EN"><textBody>
				<note type="none">
					<noteParagraph>
						<text>These Notes cover the basic principles and general instructions for use of section H.</text>
						<subnote type="Roman" indent="1">
							<noteParagraph>
								<text>Section H <u>covers</u>:</text>
								<subnote type="alpha" indent="2">
									<noteParagraph>
										<text>basic electric elements, which cover all electric units and the general mechanical structure of<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> and circuits, including the assembly of various basic elements into what are called printed circuits and also cover to a certain extent the manufacture of these elements (when not covered elsewhere);</text>
									</noteParagraph>
									<noteParagraph>
										<text>generation of electricity, which covers the generation, conversion and distribution of electricity together with the controlling of the corresponding gear;</text>
									</noteParagraph>
									<noteParagraph>
										<text>applied electricity, which <u>covers</u>:</text>
										<subnote type="roman" indent="3">
											<noteParagraph>
												<text>general utilisation techniques, viz. those of electric heating and electric lighting circuits;</text>
											</noteParagraph>
											<noteParagraph>
												<text>some special utilisation techniques, either electric or electronic in the strict sense, which are not covered by other sections of the Classification, including:</text>
												<subnote type="number" indent="4">
													<noteParagraph>
														<text>electric light sources, including lasers;</text>
													</noteParagraph>
													<noteParagraph>
														<text>electric X-ray technique;</text>
													</noteParagraph>
													<noteParagraph>
														<text>electric plasma technique and the generation and acceleration of electrically charged particles or neutrons;</text>
													</noteParagraph>
												</subnote>
											</noteParagraph>
										</subnote>
									</noteParagraph>
									<noteParagraph>
										<text>basic electronic circuits and their control;</text>
									</noteParagraph>
									<noteParagraph>
										<text>radio or electric communication technique;</text>
									</noteParagraph>
									<noteParagraph>
										<text>the use of a specified<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> for the manufacture of the article or element described. In this connection, paragraphs<nbsp/>88 to<nbsp/>90 of the Guide should be referred to.</text>
									</noteParagraph>
								</subnote>
							</noteParagraph>
							<noteParagraph>
								<text>In this section, the following general rules apply: </text>
								<subnote type="alpha" indent="2">
									<noteParagraph>
										<text>Subject to the exceptions stated in I(c), above, any electric<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF> or part peculiar to a particular operation, process,<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF>, object or article, classified in one of the sections of the Classification other than section H, is always classified in the subclass for that operation, process,<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF>, object or article. Where common characteristics concerning technical subjects of similar nature have been brought out at class level, the electric<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF> or part is classified, in conjunction with the operation, process,<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF>, object or article, in a subclass which covers entirely the general electrical applications for the technical subject in question;</text>
									</noteParagraph>
									<noteParagraph>
										<text>The electrical applications referred to under (a), above, either general or particular, include:</text>
										<subnote type="roman" indent="3">
											<noteParagraph>
												<text>the therapeutic processes and<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF>, in class<sref ref="A61"/>;</text>
											</noteParagraph>
											<noteParagraph>
												<text>the electric processes and<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> used in various laboratory or industrial operations, in classes<sref ref="B01"/> and <sref ref="B03"/> and in subclass <sref ref="B23K"/>;</text>
											</noteParagraph>
											<noteParagraph>
												<text>the electricity supply, electric propulsion and electric lighting of vehicles in general and of particular vehicles, in the subsection "Transporting" of section B;</text>
											</noteParagraph>
											<noteParagraph>
												<text>the electric ignition systems of internal-combustion<NBSP/><GREF GLOBAL="" REFID="ENGIN">engines</GREF>, in subclass<sref ref="F02P"/>, and of combustion<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> in general, in subclass<sref ref="F23Q"/>;</text>
											</noteParagraph>
											<noteParagraph>
												<text>the whole electrical part of section G, i.e. measuring devices including<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> for measuring electric variables, checking, signalling and calculating. Electricity in that section is generally dealt with as a means and not as an end in itself;</text>
											</noteParagraph>
										</subnote>
									</noteParagraph>
									<noteParagraph>
										<text>All electrical applications, both general and particular, presuppose that the "basic electricity"<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF> appears in section H (see I(a) above) as regards the electric "basic elements" which they comprise. This rule is also valid for applied electricity, referred to in I(c), above, which appears in section H itself.</text>
									</noteParagraph>
								</subnote>
							</noteParagraph>
							<noteParagraph>
								<text>In this section, the following special cases occur: </text>
								<subnote type="alpha" indent="2">
									<noteParagraph>
										<text>Among the general applications covered by sections other than section H, it is worth noting that electric heating in general is covered by subclasses <sref ref="F24D"/> or <sref ref="F24H"/> or class <sref ref="F27"/>, and that electric lighting in general is partly covered by class <sref ref="F21"/>, since in section H (see I(c), above) there are places in <sref ref="H05B"/> which cover the same technical subjects;</text>
									</noteParagraph>
									<noteParagraph>
										<text>In the two cases referred to under (a), above, the subclasses of section F, which deal with the respective subjects, essentially cover in the first place the whole mechanical<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF> of the<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> or devices, whereas the electrical<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF>, as such, is covered by subclass<sref ref="H05B"/>;</text>
									</noteParagraph>
									<noteParagraph>
										<text>In the case of lighting, this mechanical<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF> should be taken to cover the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF><NBSP/><GREF GLOBAL="" REFID="ARRANGEMENT_OF">arrangement of</GREF> the various electric elements, i.e., their geometrical or physical position in relation to one another; this<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspect</GREF> is covered by subclass<sref ref="F21V"/>, the elements themselves and the primary circuits remaining in section H. The same applies to electric light sources, when combined with light sources of a different kind. These are covered by subclass <sref ref="H05B"/>, whereas the physical arrangement which their combination constitutes is covered by the various subclasses of class <sref ref="F21"/>;</text>
									</noteParagraph>
									<noteParagraph>
										<text>As regards heating, not only the electric elements and circuitry designs, as such, are covered by subclass <sref ref="H05B"/>, but also the electric<NBSP/><GREF GLOBAL="" REFID="ASPECT">aspects</GREF> of their arrangement, where these concern cases of general application; electric furnaces being considered as such. The physical disposition of the electric elements in furnaces is covered by section F. If a comparison is made with electric welding circuits, which are covered by subclass<sref ref="B23K"/> in connection with welding, it can be seen that electric heating is not covered by the general rule stated in II, above.</text>
									</noteParagraph>
								</subnote>
							</noteParagraph>
						</subnote>
					</noteParagraph>
				</note>
			</textBody></ipcEntry><ipcEntry kind="c" symbol="H01" ipcLevel="C" entryType="K" lang="EN"><textBody>
				<title>
					<titlePart>
						<text>BASIC ELECTRIC ELEMENTS</text>
					</titlePart>
				</title>
			</textBody><ipcEntry kind="n" symbol="H01" ipcLevel="C" entryType="K" lang="EN"><textBody>
					<note type="number">
						<noteParagraph>
							<text>Processes involving only a single technical art, e.g. drying, coating, for which provision exists elsewhere are classified in the relevant class for that art.</text>
						</noteParagraph>
						<noteParagraph edition="20000101">
							<text>Attention is drawn to the Notes following the titles of class <sref ref="B81"/> and subclass <sref ref="B81B"/> relating to "micro-structural devices" and "micro-structural systems".</text>
						</noteParagraph>
					</note>
				</textBody></ipcEntry><ipcEntry kind="u" symbol="H01L" ipcLevel="C" edition="19740701" entryType="K" lang="EN" definition="yes"><textBody>
					<title>
						<titlePart>
							<text>SEMICONDUCTOR<NBSP/><GREF REFID="H01L#DEVIC">DEVICES</GREF></text>
						</titlePart>
						<titlePart>
							<text>ELECTRIC SOLID STATE<NBSP/><GREF REFID="H01L#DEVIC">DEVICES</GREF> NOT OTHERWISE PROVIDED FOR</text>
							<entryReference>conveying systems for semiconductor<NBSP/><GREF REFID="H01L#WAFER">wafers</GREF><sref ref="B65G0049070000"/></entryReference>
							<entryReference>use of semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> for measuring<sref ref="G01"/></entryReference>
							<entryReference>details of scanning-probe<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF>, in general<sref ref="G12B0021000000"/></entryReference>
							<entryReference>resistors in general <sref ref="H01C"/></entryReference>
							<entryReference>magnets, inductors, transformers <sref ref="H01F"/></entryReference>
							<entryReference>capacitors in general <sref ref="H01G"/></entryReference>
							<entryReference>electrolytic<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF><sref ref="H01G0009000000"/></entryReference>
							<entryReference>batteries, accumulators <sref ref="H01M"/></entryReference>
							<entryReference>waveguides, resonators, or lines of the waveguide type <sref ref="H01P"/></entryReference>
							<entryReference>line connectors, current collectors <sref ref="H01R"/></entryReference>
							<entryReference>stimulated-emission<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF><sref ref="H01S"/></entryReference>
							<entryReference>electromechanical resonators <sref ref="H03H"/></entryReference>
							<entryReference>loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers <sref ref="H04R"/></entryReference>
							<entryReference>electric light sources in general <sref ref="H05B"/></entryReference>
							<entryReference>printed circuits, hybrid circuits, casings or constructional details of electrical<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF>, manufacture of assemblages of electrical<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF><sref ref="H05K"/></entryReference>
							<entryReference>use of semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> in circuits having a particular application,<u>see</u> the subclass for the application</entryReference>
						</titlePart>
					</title>
				</textBody><ipcEntry kind="n" symbol="H01L" ipcLevel="C" entryType="K" lang="EN"><textBody>
						<note type="number" indent="0">
							<noteParagraph>
								<text>This subclass <u>covers</u>:</text>
								<subnote type="bullet" indent="1">
									<noteParagraph edition="19740701">
										<text>electric solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> which are not covered by any other subclass and details thereof, and includes: semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> adapted for rectifying, amplifying, oscillating or switching; semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> sensitive to radiation; electric solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> using thermoelectric, superconductive, piezo-electric, electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuit</GREF><NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>;</text>
									</noteParagraph>
									<noteParagraph edition="19740701">
										<text>photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes and thin-film or thick-film circuits;</text>
									</noteParagraph>
									<noteParagraph edition="19740701">
										<text>processes and<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of such<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, except where such processes relate to single-step processes for which provision exists elsewhere.</text>
									</noteParagraph>
								</subnote>
							</noteParagraph>
							<noteParagraph>
								<text>In this subclass, the following terms or expressions are used with the meaning indicated:</text>
								<subnote type="bullet" indent="1">
									<noteParagraph edition="20060101">
										<text>"<GREF REFID="H01L#WAFER">wafer</GREF>" means a slice of semiconductor or crystalline substrate<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF>, which can be modified by impurity diffusion (doping), ion implantation or epitaxy, and whose active surface can be processed into arrays of discrete<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> or<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuits</GREF>;</text>
									</noteParagraph>
									<noteParagraph>
										<text>"<GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF>" means the body of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> within which, or at the surface of which, the physical effects characteristic of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> occur. In thermoelectric<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, it includes all<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> in the current path.</text>
									</noteParagraph>
								</subnote>
								<orphan indent="1" edition="19740701">
									<text>Regions in or on the body of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> (other than the<NBSP/><GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF> itself), which exert an influence on the<NBSP/><GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF> electrically, are considered to be "<GREF REFID="H01L#ELECTROD">electrodes</GREF>" whether or not an external electrical connection is made thereto. An electrode may include several portions and the term includes metallic regions which exert influence on the<NBSP/><GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF> through an insulating region (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, only those portions which exert an influence on the<NBSP/><GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF>by virtue of their shape, size, or disposition or the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> of which they are formed are considered to be part of the electrode. The other portions are considered to be "<GREF GLOBAL="" REFID="ARRANGEMENTS_FOR">arrangements for</GREF> conducting electric current to or from the<NBSP/><GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF>" or "interconnections between solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate", i.e. leads;</text>
									<subnote type="bullet" indent="1">
										<noteParagraph edition="19740701">
											<text>"<GREF REFID="H01L#DEVIC">device</GREF>" means an electric circuit element; where an electric circuit element is one of a plurality of elements formed in or on a common substrate it is referred to as a "<GREF REFID="H01L#COMPONENT">component</GREF>";</text>
										</noteParagraph>
										<noteParagraph edition="19740701">
											<text>"<GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF>" is a<NBSP/><GREF REFID="H01L#DEVIC">device</GREF>in its fully assembled state which may or may not require further<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF>, e.g. electroforming, before it is ready for use but which does not require the addition of further structural units;</text>
										</noteParagraph>
										<noteParagraph edition="19740701">
											<text>"<GREF REFID="H01L#PART">parts</GREF>" includes all structural units which are included in a<NBSP/><GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF>;</text>
										</noteParagraph>
										<noteParagraph edition="19740701">
											<text>"<GREF REFID="H01L#CONTAINER">container</GREF>" is an enclosure forming part of the<NBSP/><GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF> and is essentially a solid construction in which the body of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "<GREF REFID="H01L#ENCAPSULATION">encapsulation</GREF>";</text>
										</noteParagraph>
										<noteParagraph edition="19740701">
											<text>"<GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuit</GREF>" is a<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> where all<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF>, e.g. diodes, resistors, are built up on a common substrate and form the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> including interconnections between the<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF>;</text>
										</noteParagraph>
										<noteParagraph edition="19740701">
											<text>"<GREF REFID="H01L#ASSEMBL">assembly</GREF>" of a<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> is the building up of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> from its<NBSP/><GREF REFID="H01L#COMPONENT">component</GREF> constructional units and includes the provision of fillings in<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF>.</text>
										</noteParagraph>
									</subnote>
								</orphan>
							</noteParagraph>
							<noteParagraph edition="19950101">
								<text>In this subclass, both the process or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of a<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> and the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF>itself are classified, whenever both of these are described sufficiently to be<NBSP/><GREF GLOBAL="" REFID="OF_INTEREST">of interest</GREF>.</text>
							</noteParagraph>
						</note>
					</textBody></ipcEntry><ipcEntry kind="m" symbol="H01L0021000000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN" priorityOrder="150" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of semiconductor or solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="n" symbol="H01L0021020000" endSymbol="H01L0021670000" ipcLevel="C" entryType="K" lang="EN"><textBody>
							<note type="none">
								<noteParagraph edition="19740701">
									<text>Group <sref ref="H01L0021700000"/> takes precedence over groups <mref ref="H01L0021020000" endRef="H01L0021670000"/>.</text>
								</noteParagraph>
							</note>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0021020000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0021027000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Making masks on semiconductor bodies for further photolithographic processing, not provided for in group <sref ref="H01L0021180000"/> or <sref ref="H01L0021340000"/></text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0021033000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>comprising inorganic layers</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0021040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0021060000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0021080000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text><GREF GLOBAL="" REFID="PREPARATION">Preparation</GREF> of the foundation plate</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021100000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Preliminary<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of the selenium or tellurium, its application to the foundation plate, or the subsequent<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of the combination</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021103000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Conversion of the selenium or tellurium to the conductive state</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021105000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text><GREF GLOBAL="" REFID="TREATMENT">Treatment</GREF> of the surface of the selenium or tellurium layer after having been made conductive</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021108000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Provision of discrete insulating layers, i.e. non-genetic barrier layers</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021120000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021140000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text><GREF GLOBAL="" REFID="TREATMENT">Treatment</GREF> of the<NBSP/><GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF>, e.g. by electroforming to form a barrier</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021145000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Ageing</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0021160000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> having semiconductor bodies comprising cuprous oxide or cuprous iodide</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0021180000" ipcLevel="A" edition="19740701,19950101,20000101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> having semiconductor bodies comprising elements of the fourth group of the Periodic System or A<sub>III</sub>B<sub>V</sub>compounds with or without impurities, e.g. doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="n" symbol="H01L0021180000" ipcLevel="A" entryType="K" lang="EN" nocore="yes"><textBody>
										<note type="none">
											<noteParagraph edition="20000101">
												<text>This group <u>covers</u>also processes and<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> which, by using the appropriate technology, are clearly suitable for manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> whose bodies comprise elements of the fourth group of the Periodic System or A<sub>III</sub>B<sub>V</sub>compounds, even if the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> used is not explicitly specified.</text>
											</noteParagraph>
										</note>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021200000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Deposition of semiconductor<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> on a substrate, e.g. epitaxial growth</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021203000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using physical deposition, e.g. vacuum deposition, sputtering</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021205000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021208000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using liquid deposition</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021220000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Diffusion of impurity<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, electrode<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, into, or out of, a semiconductor body, or between semiconductor regions</text>
											</titlePart>
											<titlePart>
												<text>Redistribution of impurity<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. without introduction or removal of further dopant</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021223000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using diffusion into, or out of, a solid from or into a gaseous phase</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021225000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021228000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021240000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Alloying of impurity<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, electrode<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, with a semiconductor body</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021260000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Bombardment with wave or particle radiation</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021261000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>to produce a nuclear reaction transmuting chemical elements</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021263000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with high-energy radiation</text>
													<entryReference><sref ref="H01L0021261000"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021265000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>producing ion implantation</text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021266000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>using masks</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021268000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>using electromagnetic radiation, e.g. laser radiation</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021280000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Manufacture of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF>on semiconductor bodies using processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> not provided for in groups<mref ref="H01L0021200000" endRef="H01L0021268000"/></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021283000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Deposition of conductive or insulating<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> for<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021285000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>from a gas or vapour, e.g. condensation</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021288000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>from a liquid, e.g. electrolytic deposition</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021300000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text><GREF GLOBAL="" REFID="TREATMENT">Treatment</GREF> of semiconductor bodies using processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> not provided for in groups<mref ref="H01L0021200000" endRef="H01L0021260000"/></text>
												<entryReference>manufacture of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF> thereon<sref ref="H01L0021280000"/></entryReference>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021301000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>to subdivide a semiconductor body into separate<NBSP/><GREF REFID="H01L#PART">parts</GREF>, e.g. making partitions</text>
													<entryReference>cutting <sref ref="H01L0021304000"/></entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021302000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021304000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Mechanical<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF>, e.g. grinding, polishing, cutting</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021306000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Chemical or electrical<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF>, e.g. electrolytic etching</text>
														<entryReference>to form insulating layers <sref ref="H01L0021310000"/></entryReference>
														<entryReference>after-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of insulating layers<sref ref="H01L0021310500"/></entryReference>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021306300" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Electrolytic etching</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021306500" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Plasma etching</text>
														</titlePart>
														<titlePart>
															<text>Reactive-ion etching</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021308000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>using masks</text>
															<entryReference><sref ref="H01L0021306300"/>, <sref ref="H01L0021306500"/>, take precedence</entryReference>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0021310000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>to form insulating layers thereon, e.g. for masking or by using photolithographic techniques</text>
													<entryReference>encapsulating layers <sref ref="H01L0021560000"/></entryReference>
												</titlePart>
												<titlePart>
													<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these layers</text>
												</titlePart>
												<titlePart>
													<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> for these layers</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021310500" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF></text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021311000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Etching the insulating layers</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021311500" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Doping the insulating layers</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021312000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Organic layers, e.g. photoresist</text>
														<entryReference><sref ref="H01L0021310500"/>, <sref ref="H01L0021320000"/> take precedence</entryReference>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021314000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Inorganic layers</text>
														<entryReference><sref ref="H01L0021310500"/>, <sref ref="H01L0021320000"/> take precedence</entryReference>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021316000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>composed of oxides or glassy oxides or oxide-based glass</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021318000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>composed of nitrides</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021320000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>using masks</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021320500" ipcLevel="A" edition="19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers</text>
													</titlePart>
													<titlePart>
														<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these layers</text>
														<entryReference>manufacture of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF><sref ref="H01L0021280000"/></entryReference>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021321000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF></text>
														</titlePart>
													</title>
												</textBody><ipcEntry kind="8" symbol="H01L0021321300" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
														<title>
															<titlePart>
																<text>Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer</text>
															</titlePart>
														</title>
													</textBody></ipcEntry><ipcEntry kind="8" symbol="H01L0021321500" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
														<title>
															<titlePart>
																<text>Doping the layers</text>
															</titlePart>
														</title>
													</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0021322000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>to modify their internal properties, e.g. to produce internal imperfections</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021324000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Thermal<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> for modifying the properties of semiconductor bodies, e.g. annealing, sintering</text>
													<entryReference><mref ref="H01L0021200000" endRef="H01L0021288000"/>, <mref ref="H01L0021302000" endRef="H01L0021322000"/> take precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021326000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Application of electric currents or fields, e.g. for electroforming</text>
													<entryReference><mref ref="H01L0021200000" endRef="H01L0021288000"/>, <mref ref="H01L0021302000" endRef="H01L0021324000"/> take precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021328000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Multistep processes for the manufacture of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> of the bipolar type, e.g. diodes, transistors, thyristors</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021329000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> comprising one or two<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF>, e.g. diodes</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021330000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> comprising three or more<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021331000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Transistors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021332000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Thyristors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021334000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Multistep processes for the manufacture of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> of the unipolar type</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021335000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Field-effect transistors</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021336000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with an insulated gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021337000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with a PN junction gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021338000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with a Schottky gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0021339000" ipcLevel="A" edition="19900101,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Charge transfer<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0021340000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> having semiconductor bodies not provided for in groups<sref ref="H01L0021060000"/>, <sref ref="H01L0021160000"/>, and <sref ref="H01L0021180000"/>with or without impurities, e.g. doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0021360000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Deposition of semiconductor<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> on a substrate, e.g. epitaxial growth</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021363000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using physical deposition, e.g. vacuum deposition, sputtering</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021365000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021368000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using liquid deposition</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021380000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Diffusion of impurity<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, electrode<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, into, or out of, a semiconductor body, or between semiconductor regions</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021383000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using diffusion into, or out of, a solid from or into a gaseous phase</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021385000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021388000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021400000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Alloying of impurity<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, electrode<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, with a semiconductor body</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021420000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Bombardment with radiation</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021423000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with high-energy radiation</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021425000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>producing ion implantation</text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021426000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>using masks</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021428000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>using electromagnetic radiation, e.g. laser radiation</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021440000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Manufacture of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF>on semiconductor bodies using processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> not provided for in groups<mref ref="H01L0021360000" endRef="H01L0021428000"/></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021441000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Deposition of conductive or insulating<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> for<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021443000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>from a gas or vapour, e.g. condensation</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021445000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>from a liquid, e.g. electrolytic deposition</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0021447000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>involving the application of pressure, e.g. thermo-compression bonding</text>
													<entryReference><sref ref="H01L0021607000"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021449000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>involving the application of mechanical vibrations, e.g. ultrasonic vibrations</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021460000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text><GREF GLOBAL="" REFID="TREATMENT">Treatment</GREF> of semiconductor bodies using processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> not provided for in groups<mref ref="H01L0021360000" endRef="H01L0021428000"/></text>
												<entryReference>manufacture of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF> thereon<sref ref="H01L0021440000"/></entryReference>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021461000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021463000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Mechanical<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF>, e.g. grinding, ultrasonic<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF></text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0021465000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Chemical or electrical<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF>, e.g. electrolytic etching</text>
														<entryReference>to form insulating layers <sref ref="H01L0021469000"/></entryReference>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021467000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>using masks</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021469000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>to form insulating layers thereon, e.g. for masking or by using photolithographic techniques</text>
														<entryReference>encapsulating layers <sref ref="H01L0021560000"/></entryReference>
													</titlePart>
													<titlePart>
														<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these layers</text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021470000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Organic layers, e.g. photoresist</text>
															<entryReference><sref ref="H01L0021475000"/>, <sref ref="H01L0021475700"/> take precedence</entryReference>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021471000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Inorganic layers</text>
															<entryReference><sref ref="H01L0021475000"/>, <sref ref="H01L0021475700"/> take precedence</entryReference>
														</titlePart>
													</title>
												</textBody><ipcEntry kind="8" symbol="H01L0021473000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
														<title>
															<titlePart>
																<text>composed of oxides or glassy oxides or oxide-based glass</text>
															</titlePart>
														</title>
													</textBody></ipcEntry></ipcEntry><ipcEntry kind="7" symbol="H01L0021475000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>using masks</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021475700" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF></text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021476300" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers</text>
													</titlePart>
													<titlePart>
														<text>After-<GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these layers</text>
														<entryReference>manufacture of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF><sref ref="H01L0021280000"/></entryReference>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0021477000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Thermal<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> for modifying the properties of semiconductor bodies, e.g. annealing, sintering</text>
													<entryReference><mref ref="H01L0021360000" endRef="H01L0021449000"/>, <mref ref="H01L0021461000" endRef="H01L0021475000"/> take precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021479000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Application of electric currents or fields, e.g. for electroforming</text>
													<entryReference><mref ref="H01L0021360000" endRef="H01L0021449000"/>, <mref ref="H01L0021461000" endRef="H01L0021477000"/> take precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0021480000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of<NBSP/><GREF REFID="H01L#PART">parts</GREF>, e.g.<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF>, prior to<NBSP/><GREF REFID="H01L#ASSEMBL">assembly</GREF> of the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, using processes not provided for in a single one of the groups<mref ref="H01L0021060000" endRef="H01L0021326000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0021500000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text><GREF REFID="H01L#ASSEMBL">Assembly</GREF> of semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>using processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> not provided for in a single one of the groups<mref ref="H01L0021060000" endRef="H01L0021326000"/></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0021520000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Mounting semiconductor bodies in<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021540000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Providing fillings in<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF>, e.g. gas fillings</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021560000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text><GREF REFID="H01L#ENCAPSULATION">Encapsulations</GREF>, e.g. encapsulating layers, coatings</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021580000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Mounting semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> on supports</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021600000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Attaching leads or other conductive members, to be used for carrying current to or from the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> in operation</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021603000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>involving the application of pressure, e.g. thermo-compression bonding</text>
													<entryReference><sref ref="H01L0021607000"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021607000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>involving the application of mechanical vibrations, e.g. ultrasonic vibrations</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0021620000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> having no potential-jump barriers or surface barriers</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0021640000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> other than semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof, not specially adapted for a single type of<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> provided for in groups<mref ref="H01L0031000000" endRef="H01L0051000000"/></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0021660000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text>Testing or measuring during manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0021670000" ipcLevel="C" edition="20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF GLOBAL="" REFID="APPARATU">Apparatus</GREF> specially adapted for<NBSP/><GREF GLOBAL="" REFID="HANDLING">handling</GREF> semiconductor or electric solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>during manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof</text>
								</titlePart>
								<titlePart>
									<text><GREF GLOBAL="" REFID="APPARATU">Apparatus</GREF> specially adapted for<NBSP/><GREF GLOBAL="" REFID="HANDLING">handling</GREF><NBSP/><GREF REFID="H01L#WAFER">wafers</GREF>during manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of semiconductor or electric solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0021673000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>using specially adapted carriers</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0021677000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>for conveying, e.g. between different work stations</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0021680000" ipcLevel="A" edition="19740701,20060101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>for positioning, orientation or alignment</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0021683000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>for supporting or gripping</text>
										<entryReference>for positioning, orientation or alignment <sref ref="H01L0021680000"/></entryReference>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0021687000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>using mechanical means, e.g. chucks, clamps or pinches</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0021700000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> or<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuits</GREF> formed in or on a common substrate or of specific<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
								<titlePart>
									<text>Manufacture of<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuit</GREF><NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of specific<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
									<entryReference>manufacture of assemblies consisting of preformed electrical<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF><sref ref="H05K0003000000"/>, <sref ref="H05K0013000000"/></entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0021710000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Manufacture of specific<NBSP/><GREF REFID="H01L#PART">parts</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> defined in group<sref ref="H01L0021700000"/></text>
										<entryReference><sref ref="H01L0021280000"/>, <sref ref="H01L0021440000"/>, <sref ref="H01L0021480000"/> take precedence</entryReference>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0021740000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0021760000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Making of isolation regions between<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0021761000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>PN junctions</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021762000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Dielectric regions</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021763000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Polycrystalline semiconductor regions</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021764000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Air gaps</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0021765000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>by field-effect</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0021768000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Applying interconnections to be used for carrying current between separate<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> within a<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0021770000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> or<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuits</GREF> formed in, or on, a common substrate</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0021780000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>with subsequent division of the substrate into plural individual<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
											<entryReference>cutting to change the surface-physical characteristics or shape of semiconductor bodies <sref ref="H01L0021304000"/></entryReference>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0021782000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>to produce<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, each consisting of a single circuit element</text>
												<entryReference><sref ref="H01L0021820000"/> takes precedence</entryReference>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021784000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being a semiconductor body</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021786000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being other than a semiconductor body, e.g. insulating body</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0021820000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>to produce<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g.<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuits</GREF>, each consisting of a plurality of<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0021822000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being a semiconductor, using silicon technology</text>
													<entryReference><sref ref="H01L0021825800"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021822200" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Bipolar technology</text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021822400" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>comprising a combination of vertical and lateral transistors</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021822600" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>comprising merged transistor logic or integrated injection logic</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021822800" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Complementary<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g. complementary transistors</text>
														</titlePart>
													</title>
												</textBody></ipcEntry><ipcEntry kind="7" symbol="H01L0021822900" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Memory structures</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021823200" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Field-effect technology</text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021823400" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>MIS technology</text>
														</titlePart>
													</title>
												</textBody><ipcEntry kind="8" symbol="H01L0021823600" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
														<title>
															<titlePart>
																<text>Combination of enhancement and depletion transistors</text>
															</titlePart>
														</title>
													</textBody></ipcEntry><ipcEntry kind="8" symbol="H01L0021823800" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
														<title>
															<titlePart>
																<text>Complementary field-effect transistors, e.g. CMOS</text>
															</titlePart>
														</title>
													</textBody></ipcEntry><ipcEntry kind="8" symbol="H01L0021823900" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
														<title>
															<titlePart>
																<text>Memory structures</text>
															</titlePart>
														</title>
													</textBody><ipcEntry kind="9" symbol="H01L0021824200" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
															<title>
																<titlePart>
																	<text>Dynamic random access memory structures (DRAM)</text>
																</titlePart>
															</title>
														</textBody></ipcEntry><ipcEntry kind="9" symbol="H01L0021824400" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
															<title>
																<titlePart>
																	<text>Static random access memory structures (SRAM)</text>
																</titlePart>
															</title>
														</textBody></ipcEntry><ipcEntry kind="9" symbol="H01L0021824600" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
															<title>
																<titlePart>
																	<text>Read-only memory structures (ROM)</text>
																</titlePart>
															</title>
														</textBody><ipcEntry kind="A" symbol="H01L0021824700" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
																<title>
																	<titlePart>
																		<text>electrically-programmable (EPROM)</text>
																	</titlePart>
																</title>
															</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="6" symbol="H01L0021824800" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Combination of bipolar and field-effect technology</text>
													</titlePart>
												</title>
											</textBody><ipcEntry kind="7" symbol="H01L0021824900" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
													<title>
														<titlePart>
															<text>Bipolar and MOS technology</text>
														</titlePart>
													</title>
												</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0021825200" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being a semiconductor, using III-V technology</text>
													<entryReference><sref ref="H01L0021825800"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021825400" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being a semiconductor, using II-VI technology</text>
													<entryReference><sref ref="H01L0021825800"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021825600" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being a semiconductor, using technologies not covered by one of groups <sref ref="H01L0021822000"/>, <sref ref="H01L0021825200"/> or <sref ref="H01L0021825400"/></text>
													<entryReference><sref ref="H01L0021825800"/> takes precedence</entryReference>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021825800" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being a semiconductor, using a combination of technologies covered by <sref ref="H01L0021822000"/>, <sref ref="H01L0021825200"/>, <sref ref="H01L0021825400"/> or <sref ref="H01L0021825600"/></text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0021840000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the substrate being other than a semiconductor body, e.g. being an insulating body</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0021860000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0021980000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text><GREF REFID="H01L#ASSEMBL">Assembly</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> consisting of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate</text>
									</titlePart>
									<titlePart>
										<text><GREF REFID="H01L#ASSEMBL">Assembly</GREF> of<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuit</GREF><NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
										<entryReference><sref ref="H01L0021500000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0023000000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN" priorityOrder="140"><textBody>
						<title>
							<titlePart>
								<text>Details of semiconductor or other solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								<entryReference><sref ref="H01L0025000000"/> takes precedence</entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="n" symbol="H01L0023000000" ipcLevel="C" entryType="K" lang="EN"><textBody>
							<note type="none" indent="1">
								<noteParagraph>
									<text>This group <u>does not cover</u>:</text>
									<subnote type="bullet" indent="1">
										<noteParagraph>
											<text>details of semiconductor bodies or of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> provided for in group<sref ref="H01L0029000000"/>, which details are covered by that group;</text>
										</noteParagraph>
										<noteParagraph>
											<text>details peculiar to<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> provided for in a single main group of groups<mref ref="H01L0031000000" endRef="H01L0051000000"/>, which details are covered by those groups.</text>
										</noteParagraph>
									</subnote>
								</noteParagraph>
							</note>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0023020000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF REFID="H01L#CONTAINER">Containers</GREF></text>
								</titlePart>
								<titlePart>
									<text>Seals</text>
									<entryReference><sref ref="H01L0023120000"/>, <sref ref="H01L0023340000"/>, <sref ref="H01L0023480000"/>, <sref ref="H01L0023552000"/> take precedence</entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the shape</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023043000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#CONTAINER">container</GREF> being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0023045000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>the other leads having an insulating passage through the base</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0023047000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>the other leads being parallel to the base</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0023049000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>the other leads being perpendicular to the base</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0023051000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0023053000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#CONTAINER">container</GREF> being a hollow construction and having an insulating base as a mounting for the semiconductor body</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0023055000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>the leads having a passage through the base</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0023057000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>the leads being parallel to the base</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023060000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> of the<NBSP/><GREF REFID="H01L#CONTAINER">container</GREF> or its electrical properties</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023080000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> being an electrical insulator, e.g. glass</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023100000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> or<NBSP/><GREF GLOBAL="" REFID="ARRANGEMENT_OF">arrangement of</GREF> seals between<NBSP/><GREF REFID="H01L#PART">parts</GREF>, e.g. between cap and base of the<NBSP/><GREF REFID="H01L#CONTAINER">container</GREF> or between leads and walls of the<NBSP/><GREF REFID="H01L#CONTAINER">container</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023120000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Mountings, e.g. non-detachable insulating substrates</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023130000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the shape</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023140000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> or its electrical properties</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023150000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Ceramic or glass substrates</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023160000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Fillings or auxiliary members in<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF>, e.g. centering rings</text>
									<entryReference><sref ref="H01L0023420000"/>, <sref ref="H01L0023552000"/> take precedence</entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023180000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Fillings characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF>, its physical or chemical properties, or its arrangement within the<NBSP/><GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="n" symbol="H01L0023200000" endSymbol="H01L0023240000" ipcLevel="A" entryType="K" lang="EN" nocore="yes"><textBody>
									<note type="none">
										<noteParagraph edition="19740701">
											<text>Group <sref ref="H01L0023260000"/> takes precedence over groups <mref ref="H01L0023200000" endRef="H01L0023240000"/>.<nbsp/></text>
										</noteParagraph>
									</note>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023200000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>gaseous at the normal operating temperature of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023220000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>liquid at the normal operating temperature of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023240000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>solid or gel, at the normal operating temperature of the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023260000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> for absorbing or reacting with moisture or other undesired substances</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023280000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF REFID="H01L#ENCAPSULATION">Encapsulation</GREF>, e.g. encapsulating layers, coatings</text>
									<entryReference><sref ref="H01L0023552000"/> takes precedence</entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023290000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023310000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the arrangement</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023320000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text>Holders for supporting the<NBSP/><GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF> in operation, i.e. detachable fixtures</text>
									<entryReference><sref ref="H01L0023400000"/> takes precedence</entryReference>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0023340000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF GLOBAL="" REFID="ARRANGEMENTS_FOR">Arrangements for</GREF> cooling, heating, ventilating or temperature compensation</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023360000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, or shaping, to facilitate cooling or heating, e.g. heat sinks</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023367000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Cooling facilitated by shape of<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023373000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Cooling facilitated by selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> for the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023380000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Cooling arrangements using the Peltier effect</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023400000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Mountings or securing means for detachable cooling or heating arrangements</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023420000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Fillings or auxiliary members in<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF> selected or arranged to facilitate heating or cooling</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023427000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Cooling by change of state, e.g. use of heat pipes</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023433000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Auxiliary members characterised by their shape, e.g. pistons</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023440000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>the<NBSP/><GREF REFID="H01L#COMPLETE_DEVIC">complete</GREF><NBSP/><GREF REFID="H01L#DEVIC">device</GREF> being wholly immersed in a fluid other than air</text>
										<entryReference><sref ref="H01L0023427000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023460000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>involving the transfer of heat by flowing fluids</text>
										<entryReference><sref ref="H01L0023420000"/>, <sref ref="H01L0023440000"/> take precedence</entryReference>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023467000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>by flowing gases, e.g. air</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023473000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>by flowing liquids</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023480000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text><GREF GLOBAL="" REFID="ARRANGEMENTS_FOR">Arrangements for</GREF> conducting electric current to or from the<NBSP/><GREF REFID="H01L#SOLID_STATE_BOD">solid state body</GREF> in operation, e.g. leads or terminal arrangements</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023482000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>consisting of lead-in layers inseparably applied to the semiconductor body</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023485000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023488000" ipcLevel="A" edition="19900101,20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>consisting of soldered or bonded constructions</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023490000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>wire-like</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023492000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Bases or plates</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023495000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Lead-frames</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023498000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Leads on insulating substrates</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023500000" ipcLevel="A" edition="19740701,19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>for<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuit</GREF><NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
										<entryReference><mref ref="H01L0023482000" endRef="H01L0023498000"/> take precedence</entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023520000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF GLOBAL="" REFID="ARRANGEMENTS_FOR">Arrangements for</GREF> conducting electric current within the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> in operation from one<NBSP/><GREF REFID="H01L#COMPONENT">component</GREF> to another</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023522000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023525000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>with adaptable interconnections</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023528000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Layout of the interconnection structure</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0023532000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0023535000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>including internal interconnections, e.g. cross-under constructions</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023538000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023544000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Marks applied to semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g. registration marks, test patterns</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0023552000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Protection against radiation, e.g. light</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023556000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>against alpha rays</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0023580000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Structural electrical<NBSP/><GREF GLOBAL="" REFID="ARRANGEMENTS_FOR">arrangements for</GREF> semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> not otherwise provided for</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0023600000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Protection against electrostatic charges or discharges, e.g. Faraday shields</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023620000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Protection against overcurrent or overload, e.g. fuses, shunts</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0023640000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Impedance arrangements</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0023660000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>High-frequency<NBSP/><GREF GLOBAL="" REFID="ADAPTATION">adaptations</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0025000000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN" priorityOrder="0" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Assemblies consisting of a plurality of individual semiconductor or other solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
								<entryReference>assemblies of photoelectronic cells <sref ref="H01L0031042000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0025030000" ipcLevel="C" edition="19900101,20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>all the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of a type provided for in the same subgroup of groups<mref ref="H01L0027000000" endRef="H01L0051000000"/>, e.g. assemblies of rectifier diodes</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0025040000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> not having separate<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF></text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0025065000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of a type provided for in group<sref ref="H01L0027000000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0025070000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of a type provided for in group<sref ref="H01L0029000000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0025075000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of a type provided for in group<sref ref="H01L0033000000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0025100000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> having separate<NBSP/><GREF REFID="H01L#CONTAINER">containers</GREF></text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0025110000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of a type provided for in group<sref ref="H01L0029000000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0025130000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of a type provided for in group<sref ref="H01L0033000000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0025160000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of types provided for in two or more different main groups of groups<mref ref="H01L0027000000" endRef="H01L0051000000"/>, e.g. forming hybrid circuits</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0025180000" ipcLevel="C" edition="19900101,20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> being of types provided for in two or more different subgroups of the same main group of groups<mref ref="H01L0027000000" endRef="H01L0051000000"/></text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0027000000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN" priorityOrder="10" definition="yes"><textBody>
						<title>
							<titlePart>
								<text><GREF REFID="H01L#DEVIC">Devices</GREF> consisting of a plurality of semiconductor or other solid-state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate</text>
								<entryReference>details thereof <sref ref="H01L0023000000"/>, <mref ref="H01L0029000000" endRef="H01L0051000000"/></entryReference>
								<entryReference>assemblies consisting of a plurality of individual solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF><sref ref="H01L0025000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="n" symbol="H01L0027010000" endSymbol="H01L0027280000" ipcLevel="C" entryType="K" lang="EN"><textBody>
							<note type="none" indent="1">
								<noteParagraph edition="19740701">
									<text>In groups <mref ref="H01L0027010000" endRef="H01L0027280000"/>, in the absence of an indication to the contrary, classification is made in the last appropriate place.</text>
								</noteParagraph>
							</note>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027010000" ipcLevel="C" edition="19800101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>comprising only passive thin-film or thick-film elements formed on a common insulating substrate</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027020000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including semiconductor<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier</text>
								</titlePart>
								<titlePart>
									<text>including integrated passive circuit elements with at least one potential-jump barrier or surface barrier</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0027040000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>the substrate being a semiconductor body</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0027060000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>including a plurality of individual<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> in a non-repetitive configuration</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0027070000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>the<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> having an active region in common</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0027080000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>including only semiconductor<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> of a single kind</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0027082000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>including bipolar<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> only</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0027085000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>including field-effect<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> only</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0027088000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> being field-effect transistors with insulated gate</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0027092000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>complementary MIS field-effect transistors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0027095000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> being Schottky barrier gate field-effect transistors</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0027098000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> being PN junction gate field-effect transistors</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0027100000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>including a plurality of individual<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> in a repetitive configuration</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0027102000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>including bipolar<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0027105000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>including field-effect<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0027108000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
											<title>
												<titlePart>
													<text>Dynamic random access memory structures</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0027110000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
											<title>
												<titlePart>
													<text>Static random access memory structures</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0027112000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
											<title>
												<titlePart>
													<text>Read-only memory structures</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0027115000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
												<title>
													<titlePart>
														<text>Electrically programmable read-only memories</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0027118000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>Masterslice<NBSP/><GREF REFID="H01L#INTEGRAT_CIRCUIT">integrated circuits</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0027120000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>the substrate being other than a semiconductor body, e.g. an insulating body</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0027130000" ipcLevel="C" edition="19800101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>combined with thin-film or thick-film passive<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0027140000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including semiconductor<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation</text>
									<entryReference>radiation-sensitive<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> structurally associated with one or more electric light sources only<sref ref="H01L0031140000"/></entryReference>
									<entryReference>couplings of light guides with optoelectronic elements <sref ref="G02B0006420000"/></entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0027142000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>Energy conversion<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0027144000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text><GREF REFID="H01L#DEVIC">Devices</GREF> controlled by radiation</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0027146000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>Imager structures</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0027148000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>Charge coupled imagers</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0027150000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including semiconductor<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> with at least one potential-jump barrier or surface barrier, specially adapted for light emission</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027160000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including thermoelectric<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF>with or without a junction of dissimilar<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
								</titlePart>
								<titlePart>
									<text>including thermomagnetic<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
									<entryReference>using the Peltier effect only for cooling of semiconductor or other solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF><sref ref="H01L0023380000"/></entryReference>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027180000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> exhibiting superconductivity</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027200000" ipcLevel="C" edition="19740701,20000101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including piezo-electric<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
								</titlePart>
								<titlePart>
									<text>including electrostrictive<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
								</titlePart>
								<titlePart>
									<text>including magnetostrictive<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027220000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> using galvano-magnetic effects, e.g. Hall effect</text>
								</titlePart>
								<titlePart>
									<text>using similar magnetic field effects</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027240000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027260000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including bulk negative resistance effect<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0027280000" ipcLevel="C" edition="20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>including<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF>using organic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> as the active part, or using a combination of organic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> with other<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> as the active part</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0027300000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>with<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation</text>
									</titlePart>
									<titlePart>
										<text>with<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0027320000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>with<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0029000000" ipcLevel="C" edition="19740701,19950101" entryType="K" lang="EN" priorityOrder="120" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier</text>
							</titlePart>
							<titlePart>
								<text>Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer</text>
							</titlePart>
							<titlePart>
								<text>Details of semiconductor bodies or of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF> thereof</text>
								<entryReference><mref ref="H01L0031000000" endRef="H01L0047000000"/>, <sref ref="H01L0051050000"/> take precedence</entryReference>
								<entryReference>details other than of semiconductor bodies or of<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF> thereof<sref ref="H01L0023000000"/></entryReference>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="n" symbol="H01L0029000000" ipcLevel="C" entryType="K" lang="EN"><textBody>
							<note type="none" indent="1">
								<noteParagraph edition="19740701">
									<text>In this main group, classification is made in all of groups <sref ref="H01L0029020000"/>, <sref ref="H01L0029400000"/> and <sref ref="H01L0029660000"/> if all of these groups are relevant.</text>
								</noteParagraph>
							</note>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0029020000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Semiconductor bodies</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0029040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes</text>
										<entryReference>characterized by physical imperfections <sref ref="H01L0029300000"/></entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0029060000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by their shape</text>
									</titlePart>
									<titlePart>
										<text>characterised by the shapes, relative sizes, or dispositions of the semiconductor regions</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029080000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> which comprises three or more<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029100000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> which comprises three or more<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0029120000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> of which they are formed</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029150000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices</text>
											<entryReference>such structures applied for the control of light <sref ref="G02F0001017000"/>, applied in semiconductor lasers <sref ref="H01S0005340000"/></entryReference>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="n" symbol="H01L0029160000" endSymbol="H01L0029260000" ipcLevel="A" entryType="K" lang="EN" nocore="yes"><textBody>
									<note type="none">
										<noteParagraph edition="19950101">
											<text>Group <sref ref="H01L0029150000"/> takes precedence over groups <mref ref="H01L0029160000" endRef="H01L0029260000"/>.<nbsp/></text>
										</noteParagraph>
									</note>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029160000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only elements of the fourth group of the Periodic System in uncombined form</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029161000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including two or more of the elements provided for in group <sref ref="H01L0029160000"/></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029165000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>in different semiconductor regions</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0029167000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>further characterised by the doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0029180000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Selenium or tellurium only, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029200000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only A<sub>III</sub>B<sub>V</sub> compounds</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029201000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including two or more compounds</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029205000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>in different semiconductor regions</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0029207000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>further characterised by the doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0029220000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only A<sub>II</sub>B<sub>VI</sub> compounds</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029221000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including two or more compounds</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029225000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>in different semiconductor regions</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0029227000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>further characterised by the doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0029240000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only inorganic semiconductor<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> not provided for in groups<sref ref="H01L0029160000"/>, <sref ref="H01L0029180000"/>, <sref ref="H01L0029200000"/> or <sref ref="H01L0029220000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029260000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, elements provided for in two or more of the groups<sref ref="H01L0029160000"/>, <sref ref="H01L0029180000"/>, <sref ref="H01L0029200000"/>, <sref ref="H01L0029220000"/>, <sref ref="H01L0029240000"/></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029267000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>in different semiconductor regions</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0029300000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by physical imperfections</text>
									</titlePart>
									<titlePart>
										<text>having polished or roughened surface</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029320000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the imperfections being within the semiconductor body</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029340000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the imperfections being on the surface</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0029360000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the concentration or distribution of impurities</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0029380000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by combination of<NBSP/><GREF GLOBAL="" REFID="FEATUR">features</GREF> provided for in two or more of the groups<sref ref="H01L0029040000"/>, <sref ref="H01L0029060000"/>, <sref ref="H01L0029120000"/>, <sref ref="H01L0029300000"/>, <sref ref="H01L0029360000"/></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0029400000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF REFID="H01L#ELECTROD">Electrodes</GREF></text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0029410000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by their shape, relative sizes or dispositions</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029417000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>carrying the current to be rectified, amplified or switched</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029423000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>not carrying the current to be rectified, amplified or switched</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0029430000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> of which they are formed</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029450000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Ohmic<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029470000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Schottky barrier<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029490000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Metal-insulator semiconductor<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029510000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Insulating<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> associated therewith</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0029660000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Types of semiconductor<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0029680000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched</text>
										<entryReference><sref ref="H01L0029960000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029700000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Bipolar<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029720000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Transistor-type<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, i.e. able to continuously respond to applied control signals</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029730000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Bipolar junction transistors</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0029732000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Vertical transistors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0029735000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Lateral transistors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0029737000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Hetero-junction transistors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0029739000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>controlled by field effect</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0029740000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Thyristor-type<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g. having four-zone regenerative action</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029744000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Gate-turn-off<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0029745000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with turn-off by field effect</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0029747000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Bidirectional<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g. triacs</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0029749000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with turn-on by field effect</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0029760000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Unipolar<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029762000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Charge transfer<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029765000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Charge-coupled<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0029768000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with field effect produced by an insulated gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0029772000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Field-effect transistors</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029775000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with one-dimensional charge carrier gas channel, e.g. quantum wire FET</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0029778000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with two-dimensional charge carrier gas channel, e.g. HEMT</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0029780000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with field effect produced by an insulated gate</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0029786000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>Thin-film transistors</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0029788000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with floating gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0029792000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with charge trapping gate insulator, e.g. MNOS-memory transistor</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry><ipcEntry kind="5" symbol="H01L0029800000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>with field effect produced by a PN or other rectifying junction gate</text>
												</titlePart>
											</title>
										</textBody><ipcEntry kind="6" symbol="H01L0029808000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with a PN junction gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry><ipcEntry kind="6" symbol="H01L0029812000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
												<title>
													<titlePart>
														<text>with a Schottky gate</text>
													</titlePart>
												</title>
											</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0029820000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>controllable by variation of the magnetic field applied to the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
										<entryReference><sref ref="H01L0029960000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0029840000" ipcLevel="A" edition="19740701,19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>controllable by variation of applied mechanical force, e.g. of pressure</text>
										<entryReference><sref ref="H01L0029960000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0029860000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the<NBSP/><GREF REFID="H01L#ELECTROD">electrodes</GREF> carrying the current to be rectified, amplified, oscillated, or switched</text>
										<entryReference><sref ref="H01L0029960000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0029860500" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Resistors with PN junction</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0029861000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Diodes</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029862000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Point contact diodes</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029864000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Transit-time diodes, e.g. IMPATT, TRAPATT diodes</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029866000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Zener diodes</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029868000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>PIN diodes</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029870000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Thyristor diodes, e.g. Shockley diodes, break-over diodes</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029872000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Schottky diodes</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029880000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Tunnel-effect diodes</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0029885000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>Esaki diodes</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0029920000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Capacitors with potential-jump barrier or surface barrier</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0029930000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Variable-capacitance diodes, e.g. varactors</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0029940000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Metal-insulator-semiconductors, e.g. MOS</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0029960000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>of a type covered by more than one of groups <sref ref="H01L0029680000"/>, <sref ref="H01L0029820000"/>, <sref ref="H01L0029840000"/> or <sref ref="H01L0029860000"/></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0031000000" ipcLevel="C" edition="19740701,19950101,20060101" entryType="K" lang="EN" priorityOrder="110" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
							</titlePart>
							<titlePart>
								<text>Details thereof</text>
								<entryReference><sref ref="H01L0051420000"/> takes precedence</entryReference>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in, or on, a common substrate, other than combinations of radiation-sensitive<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> with one or more electric light sources,<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0031020000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Details</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0031020300" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text><GREF REFID="H01L#CONTAINER">Containers</GREF></text>
									</titlePart>
									<titlePart>
										<text><GREF REFID="H01L#ENCAPSULATION">Encapsulations</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031021600" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>Coatings</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031022400" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text><GREF REFID="H01L#ELECTROD">Electrodes</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031023200" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>Optical elements or arrangements associated with the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031023600" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>Special surface textures</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031024000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text><GREF GLOBAL="" REFID="ARRANGEMENTS_FOR">Arrangements for</GREF> cooling, heating, ventilating or temperature compensation</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0031024800" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>characterised by their semiconductor bodies</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0031025600" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031026400" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>Inorganic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0031027200" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>Selenium or tellurium</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031028000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> or other impurities, only elements of the fourth group of the Periodic System</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0031028800" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>characterised by the doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0031029600" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> or other impurities, only A<sub>II</sub>B<sub>VI</sub> compounds, e.g. CdS, ZnS, HgCdTe</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031030400" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only A<sub>III</sub>B<sub>V</sub> compounds</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031031200" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only A<sub>IV</sub>B<sub>IV</sub> compounds, e.g. SiC</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031032000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, only compounds not provided for in groups<mref ref="H01L0031027200" endRef="H01L0031031200"/></text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031032800" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>including, apart from doping<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> or other impurities, semiconductor<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> provided for in two or more of groups<mref ref="H01L0031027200" endRef="H01L0031032000"/></text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0031033600" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>in different semiconductor regions, e.g. Cu<sub>2</sub>X/CdX hetero-junctions, X being an element of the sixth group of the Periodic System</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0031035200" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031036000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>characterised by their crystalline structure or particular orientation of the crystalline planes</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031036800" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including polycrystalline semiconductors</text>
											<entryReference><sref ref="H01L0031039200"/> takes precedence</entryReference>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031037600" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including amorphous semiconductors</text>
											<entryReference><sref ref="H01L0031039200"/> takes precedence</entryReference>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031038400" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including other non-monocrystalline<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. semiconductor particles embedded in an insulating<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
											<entryReference><sref ref="H01L0031039200"/> takes precedence</entryReference>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031039200" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including thin films deposited on metallic or insulating substrates</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0031040000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>adapted as conversion<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0031042000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>including a panel or array of photoelectric cells, e.g. solar cells</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031045000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>collapsible or foldable</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031048000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>encapsulated or with housing</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031050000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>characterised by special interconnection means</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031052000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text>with cooling, light-reflecting or light- concentrating means</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0031055000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>where light is absorbed and re-emitted at a different wavelength by the concentrator, e.g. by using luminescent<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0031058000" ipcLevel="C" edition="19900101" entryType="K" lang="EN" definition="yes"><textBody>
									<title>
										<titlePart>
											<text>including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0031060000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>characterised by at least one potential-jump barrier or surface barrier</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031062000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the potential barriers being only of the metal-insulator-semiconductor type</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031065000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the potential barriers being only of the graded gap type</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031068000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the potential barriers being only of the PN homojunction type</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031070000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the potential barriers being only of the Schottky type</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031072000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the potential barriers being only of the PN heterojunction type</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031075000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the potential barriers being only of the PIN type</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0031078000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>including potential barriers provided for in two or more of groups <mref ref="H01L0031062000" endRef="H01L0031075000"/></text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0031080000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>in which radiation controls flow of current through the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF>, e.g. photoresistors</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0031090000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text><GREF REFID="H01L#DEVIC">Devices</GREF> sensitive to infra-red, visible or ultra- violet radiation</text>
										<entryReference><sref ref="H01L0031101000"/> takes precedence</entryReference>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0031100000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031101000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text><GREF REFID="H01L#DEVIC">Devices</GREF> sensitive to infra-red, visible or ultra-violet radiation</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0031102000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
										<title>
											<titlePart>
												<text>characterised by only one potential barrier or surface barrier</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0031103000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the potential barrier being of the PN homojunction type</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0031105000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the potential barrier being of the PIN type</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0031107000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the potential barrier working in avalanche mode, e.g. avalanche photodiode</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0031108000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the potential barrier being of the Schottky type</text>
												</titlePart>
											</title>
										</textBody></ipcEntry><ipcEntry kind="5" symbol="H01L0031109000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>the potential barrier being of the PN heterojunction type</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry><ipcEntry kind="4" symbol="H01L0031110000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031111000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>characterised by at least three potential barriers, e.g. photothyristor</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031112000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>characterised by field-effect operation, e.g. junction field-effect photo- transistor</text>
											</titlePart>
										</title>
									</textBody><ipcEntry kind="5" symbol="H01L0031113000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
											<title>
												<titlePart>
													<text>being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor</text>
												</titlePart>
											</title>
										</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="3" symbol="H01L0031115000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
									<title>
										<titlePart>
											<text><GREF REFID="H01L#DEVIC">Devices</GREF> sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0031117000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031118000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors</text>
											</titlePart>
										</title>
									</textBody></ipcEntry><ipcEntry kind="4" symbol="H01L0031119000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>characterised by field-effect operation, e.g. MIS type detectors</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0031120000" ipcLevel="C" edition="19740701,19900101" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text>structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto</text>
									<entryReference>electroluminescent light sources <u>per se</u><sref ref="H05B0033000000"/></entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0031140000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>the light source or sources being controlled by the semiconductor<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> sensitive to radiation, e.g. image converters, image amplifiers, image storage<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031147000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the light sources and the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> sensitive to radiation all being semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> characterised by at least one potential or surface barrier</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0031153000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>formed in, or on, a common substrate</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0031160000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>the semiconductor<NBSP/><GREF REFID="H01L#DEVIC">device</GREF> sensitive to radiation being controlled by the light source or sources</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0031167000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>the light sources and the<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> sensitive to radiation all being semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> characterised by at least one potential or surface barrier</text>
										</titlePart>
									</title>
								</textBody><ipcEntry kind="4" symbol="H01L0031173000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
										<title>
											<titlePart>
												<text>formed in, or on, a common substrate</text>
											</titlePart>
										</title>
									</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0031180000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0031200000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>such<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or<NBSP/><GREF REFID="H01L#PART">parts</GREF>thereof comprising amorphous semiconductor<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0033000000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN" priorityOrder="100" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Semiconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
							</titlePart>
							<titlePart>
								<text>Details thereof</text>
								<entryReference><sref ref="H01L0051500000"/> takes precedence</entryReference>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027150000"/></entryReference>
								<entryReference>semiconductor lasers <sref ref="H01S0005000000"/></entryReference>
							</titlePart>
						</title>
					</textBody></ipcEntry><ipcEntry kind="m" symbol="H01L0035000000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" priorityOrder="50" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Thermoelectric<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>comprising a junction of dissimilar<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
							</titlePart>
							<titlePart>
								<text>Details thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0035020000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Details</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0035040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Structural details of the junction</text>
									</titlePart>
									<titlePart>
										<text>Connections of leads</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0035060000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>detachable, e.g. using a spring</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0035080000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>non-detachable, e.g. cemented, sintered, soldered</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0035100000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Connections of leads</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0035120000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Selection of the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF> for the legs of the junction</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0035140000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>using inorganic compositions</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0035160000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>comprising tellurium or selenium or sulfur</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0035180000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>comprising arsenic or antimony or bismuth</text>
											<entryReference><sref ref="H01L0035160000"/> takes precedence</entryReference>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0035200000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>comprising metals only</text>
											<entryReference><sref ref="H01L0035160000"/>, <sref ref="H01L0035180000"/> take precedence</entryReference>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0035220000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>comprising compounds containing boron, carbon, oxygen, or nitrogen</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0035240000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>using organic compositions</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0035260000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>using compositions changing continuously or discontinuously inside the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0035280000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>operating with Peltier or Seebeck effect only</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0035300000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the heat-exchanging means at the junction</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0035320000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>characterised by the structure or configuration of the cell or thermo-couple forming the<NBSP/><GREF REFID="H01L#DEVIC">device</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0035340000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0037000000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" priorityOrder="60" definition="yes"><textBody>
						<title>
							<titlePart>
								<text>Thermoelectric<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>without a junction of dissimilar<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
							</titlePart>
							<titlePart>
								<text>Thermomagnetic<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g. using Nernst-Ettinghausen effect</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0037020000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>using thermal change of dielectric constant, e.g. working above and below the Curie point</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0037040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>using thermal change of magnetic permeability, e.g. working above and below the Curie point</text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0039000000" ipcLevel="C" edition="19740701,19850101" entryType="K" lang="EN" priorityOrder="30"><textBody>
						<title>
							<titlePart>
								<text><GREF REFID="H01L#DEVIC">Devices</GREF> using superconductivity or hyperconductivity</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
								<entryReference>superconductors characterised by the ceramic-forming technique or the ceramic composition <sref ref="C04B0035000000"/></entryReference>
								<entryReference>superconductive or hyperconductive conductors, cables, or transmission lines <sref ref="H01B0012000000"/></entryReference>
								<entryReference>superconductive coils or windings <sref ref="H01F"/></entryReference>
								<entryReference>amplifiers using superconductivity <sref ref="H03F0019000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0039020000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Details</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0039040000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text><GREF REFID="H01L#CONTAINER">Containers</GREF></text>
									</titlePart>
									<titlePart>
										<text>Mountings</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0039060000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the current path</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0039080000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the shape of the element</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0039100000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>characterised by the means for switching</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0039120000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>characterised by the<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0039140000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Permanent superconductor<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0039160000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF REFID="H01L#DEVIC">Devices</GREF> switchable between superconductive and normal states</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0039180000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Cryotrons</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0039200000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Power cryotrons</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0039220000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text><GREF REFID="H01L#DEVIC">Devices</GREF>comprising a junction of dissimilar<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF>, e.g. Josephson-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0039240000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> provided for in group<sref ref="H01L0039000000"/>or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0041000000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" priorityOrder="70"><textBody>
						<title>
							<titlePart>
								<text>Piezo-electric elements in general</text>
							</titlePart>
							<titlePart>
								<text>Electrostrictive elements in general</text>
							</titlePart>
							<titlePart>
								<text>Magnetostrictive elements in general</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
							</titlePart>
							<titlePart>
								<text>Details thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="n" symbol="H01L0041000000" ipcLevel="C" entryType="K" lang="EN"><textBody>
							<note type="number">
								<noteParagraph edition="19950101">
									<text>This group <u>does not cover</u><GREF GLOBAL="" REFID="ADAPTATION">adaptations</GREF> for particular purposes, which are covered by the relevant places.<nbsp/></text>
								</noteParagraph>
								<noteParagraph edition="19950101">
									<text>Attention is drawn to the following such places:<nbsp/></text>
									<subnote type="table">
										<noteParagraph edition="19950101">
											<references>
												<sref ref="B06B"/>
											</references>
											<text>for<NBSP/><GREF GLOBAL="" REFID="ADAPTATION">adaptations</GREF> for generating or transmitting mechanical vibrations<nbsp/></text>
										</noteParagraph>
										<noteParagraph edition="19950101">
											<references>
												<sref ref="G01"/>
											</references>
											<text>for transducers as sensing elements for measuring<nbsp/></text>
										</noteParagraph>
										<noteParagraph edition="19950101">
											<references><sref ref="G04C"/>, <sref ref="G04F"/></references>
											<text>for transducers adapted for use in time-pieces<nbsp/></text>
										</noteParagraph>
										<noteParagraph edition="19950101">
											<references>
												<sref ref="G10K"/>
											</references>
											<text>for<NBSP/><GREF GLOBAL="" REFID="ADAPTATION">adaptations</GREF> for generating or transmitting sound<nbsp/></text>
										</noteParagraph>
										<noteParagraph edition="19950101">
											<references>
												<sref ref="H02N"/>
											</references>
											<text>for arrangements of elements in electric machines<nbsp/></text>
										</noteParagraph>
										<noteParagraph edition="19950101">
											<references>
												<sref ref="H03H0009000000"/>
											</references>
											<text>for networks comprising electro-mechanical or electro-acoustic elements, e.g. resonant circuits<nbsp/></text>
										</noteParagraph>
										<noteParagraph edition="19950101">
											<references>
												<sref ref="H04R"/>
											</references>
											<text>for loudspeakers, microphones, gramophone pick-ups or like transducers.<nbsp/></text>
										</noteParagraph>
									</subnote>
								</noteParagraph>
							</note>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0041020000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Details</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0041040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>of piezo-electric or electrostrictive elements</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0041047000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text><GREF REFID="H01L#ELECTROD">Electrodes</GREF></text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0041053000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Mounts, supports, enclosures or casings</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0041060000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>of magnetostrictive elements</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0041080000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Piezo-electric or electrostrictive elements</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0041083000" ipcLevel="C" edition="19950101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>having a stacked or multilayer structure</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0041087000" ipcLevel="C" edition="19950101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>formed as coaxial cables</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="n" symbol="H01L0041090000" endSymbol="H01L0041113000" ipcLevel="C" entryType="K" lang="EN"><textBody>
								<note type="none">
									<noteParagraph edition="19950101">
										<text>Groups <sref ref="H01L0041083000"/> and <sref ref="H01L0041087000"/> take precedence over groups <mref ref="H01L0041090000" endRef="H01L0041113000"/>.<nbsp/></text>
									</noteParagraph>
								</note>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0041090000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>with electrical input and mechanical output</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0041107000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>with electrical input and electrical output</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0041113000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>with mechanical input and electrical output</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0041120000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Magnetostrictive elements</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0041160000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0041180000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>for piezo-electric or electrostrictive elements</text>
									</titlePart>
								</title>
							</textBody><ipcEntry kind="3" symbol="H01L0041187000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Ceramic compositions</text>
										</titlePart>
									</title>
								</textBody></ipcEntry><ipcEntry kind="3" symbol="H01L0041193000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
									<title>
										<titlePart>
											<text>Macromolecular compositions</text>
										</titlePart>
									</title>
								</textBody></ipcEntry></ipcEntry><ipcEntry kind="2" symbol="H01L0041200000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>for magnetostrictive elements</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0041220000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" definition="yes"><textBody>
							<title>
								<titlePart>
									<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these elements or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0041240000" ipcLevel="C" edition="19900101" entryType="K" lang="EN"><textBody>
								<title>
									<titlePart>
										<text>of elements of ceramic composition</text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0041260000" ipcLevel="A" edition="19900101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>of elements of macromolecular composition</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0043000000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" priorityOrder="80" definition="yes"><textBody>
						<title>
							<titlePart>
								<text><GREF REFID="H01L#DEVIC">Devices</GREF> using galvano-magnetic or similar magnetic effects</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0043020000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Details</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0043040000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>of Hall-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0043060000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Hall-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0043080000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Magnetic-field-controlled resistors</text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0043100000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry><ipcEntry kind="1" symbol="H01L0043120000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of these<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0043140000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>for Hall-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0045000000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" priorityOrder="90"><textBody>
						<title>
							<titlePart>
								<text>Solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes</text>
							</titlePart>
							<titlePart>
								<text>Ovshinsky-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> using superconductivity or hyperconductivity<sref ref="H01L0039000000"/></entryReference>
								<entryReference>piezo-electric elements <sref ref="H01L0041000000"/></entryReference>
								<entryReference>bulk negative resistance effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF><sref ref="H01L0047000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0045020000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Solid state travelling-wave<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0047000000" ipcLevel="C" edition="19740701" entryType="K" lang="EN" priorityOrder="40"><textBody>
						<title>
							<titlePart>
								<text>Bulk negative resistance effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, e.g. Gunn-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of solid state<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0047020000" ipcLevel="A" edition="19740701" entryType="K" lang="EN" nocore="yes"><textBody>
							<title>
								<titlePart>
									<text>Gunn-effect<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0049000000" ipcLevel="C" edition="19740701,20060101" entryType="K" lang="EN" priorityOrder="130"><textBody>
						<title>
							<titlePart>
								<text>Solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> not provided for in groups<mref ref="H01L0027000000" endRef="H01L0047000000"/> and <sref ref="H01L0051000000"/> and not provided for in any other subclass</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> thereof or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0049020000" ipcLevel="C" edition="19740701" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>Thin-film or thick-film<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
								</titlePart>
							</title>
						</textBody></ipcEntry></ipcEntry><ipcEntry kind="m" symbol="H01L0051000000" ipcLevel="C" edition="19950101,20060101" entryType="K" lang="EN" priorityOrder="20"><textBody>
						<title>
							<titlePart>
								<text>Solid state<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>using organic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> as the active part, or using a combination of organic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> with other<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF> as the active part</text>
							</titlePart>
							<titlePart>
								<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of such<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>, or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
								<entryReference><GREF REFID="H01L#DEVIC">devices</GREF> consisting of a plurality of<NBSP/><GREF REFID="H01L#COMPONENT">components</GREF> formed in or on a common substrate<sref ref="H01L0027280000"/></entryReference>
								<entryReference>thermoelectric<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF>using organic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF><sref ref="H01L0035000000"/>, <sref ref="H01L0037000000"/></entryReference>
								<entryReference>piezo-electric, electrostrictive or magnetostrictive elements using organic<NBSP/><GREF GLOBAL="" REFID="MATERIAL">material</GREF><sref ref="H01L0041000000"/></entryReference>
							</titlePart>
						</title>
					</textBody><ipcEntry kind="1" symbol="H01L0051050000" ipcLevel="C" edition="20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier</text>
								</titlePart>
								<titlePart>
									<text>Capacitors or resistors with at least one potential-jump barrier or surface barrier</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0051100000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Details of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0051300000" ipcLevel="A" edition="19950101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0051400000" ipcLevel="A" edition="19950101,20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of such<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0051420000" ipcLevel="C" edition="20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation</text>
								</titlePart>
								<titlePart>
									<text>specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation</text>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0051440000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Details of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0051460000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0051480000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of such<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry><ipcEntry kind="1" symbol="H01L0051500000" ipcLevel="C" edition="20060101" entryType="K" lang="EN"><textBody>
							<title>
								<titlePart>
									<text>specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> (PLED)</text>
									<entryReference>organic semiconductor lasers <sref ref="H01S0005360000"/></entryReference>
								</titlePart>
							</title>
						</textBody><ipcEntry kind="2" symbol="H01L0051520000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Details of<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0051540000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" definition="yes" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Selection of<NBSP/><GREF GLOBAL="" REFID="MATERIAL">materials</GREF></text>
									</titlePart>
								</title>
							</textBody></ipcEntry><ipcEntry kind="2" symbol="H01L0051560000" ipcLevel="A" edition="20060101" entryType="K" lang="EN" nocore="yes"><textBody>
								<title>
									<titlePart>
										<text>Processes or<NBSP/><GREF GLOBAL="" REFID="APPARATU">apparatus</GREF> specially adapted for the manufacture or<NBSP/><GREF GLOBAL="" REFID="TREATMENT">treatment</GREF> of such<NBSP/><GREF REFID="H01L#DEVIC">devices</GREF> or of<NBSP/><GREF REFID="H01L#PART">parts</GREF> thereof</text>
									</titlePart>
								</title>
							</textBody></ipcEntry></ipcEntry></ipcEntry></ipcEntry></ipcEntry></ipcEntry></ipcEntries>
