| IPC 7 English version |
 H01S - H01S 3/30 |
| H01S00400-H01S00550 |
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| SECTION H – ELECTRICITY |
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| H 01 | BASIC ELECTRIC ELEMENTS |
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| H 01 S | DEVICES USING STIMULATED EMISSION |
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4/ | 00 | Devices using stimulated emission of wave energy other than those covered by groups H01S 1/00, H01S 3/00 or H01S 5/00, e.g. phonon maser, gamma maser |
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5/ | 00 | Semiconductor lasers [7] |
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5/ | 02 | . | Structural details or components not essential to laser action [7] |
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5/ | 022 | . | . | Mountings; Housings [7] |
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5/ | 024 | . | . | Cooling arrangements [7] |
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5/ | 026 | . | . | Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S 5/06; coupling light guides with opto-electronic elements G02B 6/42; devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, adapted for light emission H01L 27/15) [7] |
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5/ | 028 | . | . | Coatings [7] |
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5/ | 04 | . | Processes or apparatus for excitation, e.g. pumping (H01S 5/06 takes precedence) [7] |
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5/ | 042 | . | . | Electrical excitation [7] |
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5/ | 06 | . | Arrangements for controlling the laser output parameters, e.g. by operating on the active medium (transmission systems employing light H04B 10/00) [7] |
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5/ | 062 | . | . | by varying the potential of the electrodes (H01S 5/065 takes precedence) [7] |
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5/ | 0625 | . | . | . | in multi-section lasers [7] |
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5/ | 065 | . | . | Mode locking; Mode suppression; Mode selection [7] |
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5/ | 068 | . | . | Stabilisation of laser output parameters (H01S 5/0625 takes precedence) [7] |
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5/ | 0683 | . | . | . | by monitoring the optical output parameters [7] |
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5/ | 0687 | . | . | . | . | Stabilising the frequency of the laser [7] |
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5/ | 10 | . | Construction or shape of the optical resonator [7] |
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5/ | 12 | . | . | the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers) (H01S 5/18 takes precedence) [7] |
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5/ | 125 | . | . | . | Distributed Bragg reflector lasers (DBR-lasers) [7] |
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5/ | 14 | . | . | External cavity lasers (H01S 5/18 takes precedence; mode locking H01S 5/065) [7] |
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5/ | 16 | . | . | Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S 5/14 takes precedence) [7] |
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5/ | 18 | . | . | Surface-emitting lasers (SE-lasers) [7] |
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5/ | 183 | . | . | . | having a vertical cavity (VCSE-lasers) [7] |
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5/ | 187 | . | . | . | using a distributed Bragg reflector (SE-DBR-lasers) (H01S 5/183 takes precedence) [7] |
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5/ | 20 | . | Structure or shape of the semiconductor body to guide the optical wave [7] |
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5/ | 22 | . | . | having a ridge or a stripe structure [7] |
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5/ | 223 | . | . | . | Buried stripe structure (H01S 5/227 takes precedence) [7] |
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5/ | 227 | . | . | . | Buried mesa structure [7] |
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5/ | 24 | . | . | having a grooved structure, e.g. V-grooved [7] |
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5/ | 30 | . | Structure or shape of the active region; Materials therefor [7] |
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5/ | 32 | . | . | comprising PN junctions, e.g. hetero- or double- hetero-structures (H01S 5/34 takes precedence) [7] |
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5/ | 323 | . | . | . | in AIIIBV compounds, e.g. AlGaAs-laser [7] |
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5/ | 327 | . | . | . | in AIIBVI compounds, e.g. ZnCdSe-laser [7] |
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5/ | 34 | . | . | comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers) [7] |
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5/ | 343 | . | . | . | in AIIIBV compounds, e.g. AlGaAs-laser [7] |
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5/ | 347 | . | . | . | in AIIBVI compounds, e.g. ZnCdSe-laser [7] |
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5/ | 40 | . | Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02 to H01S 5/30 (H01S 5/50 takes precedence) [7] |
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5/ | 42 | . | . | Arrays of surface emitting lasers [7] |
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5/ | 50 | . | Amplifier structures not provided for in groups H01S 5/02 to H01S 5/30 (as repeaters in transmission systems H04B 10/17) [7] |
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| H01S - H01S 3/30 |  |
