IPC 7 English version H01L 33/00-H01L 101:00

IPC ⁷ English version

H01L 31/00 - H01L 31/20

H01L03300-H01L10100

SECTION H – ELECTRICITY

H 01

BASIC ELECTRIC ELEMENTS

H 01 L

SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]

33/

Semiconductor devices with at least one potential-jump barrier or surface barrier adapted for light emission, e.g. infra-red; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (couplings of light guides with optoelectronic elements G02B 6/42; semiconductor lasers H01S 5/00; electroluminescent light sources H05B 33/00) [2]

35/

Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; refrigerating machines using electric or magnetic effects F25B 21/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; obtaining energy from radioactive sources G21H) [2]

35/

Details [2]

35/

Structural details of the junction; Connections of leads [2]

35/

detachable, e.g. using a spring [2]

35/

non-detachable, e.g. cemented, sintered, soldered [2]

35/

Connections of leads [2]

35/

Selection of the material for the legs of the junction [2]

35/

using inorganic compositions [2]

35/

comprising tellurium or selenium or sulfur [2]

35/

comprising arsenic or antimony or bismuth (H01L 35/16 takes precedence) [2]

35/

comprising metals only (H01L 35/16, H01L 35/18 take precedence) [2]

35/

comprising compounds containing boron, carbon, oxygen, or nitrogen [2]

35/

using organic compositions [2]

35/

using compositions changing continuously or discontinuously inside the material [2]

35/

operating with Peltier or Seebeck effect only [2]

35/

characterised by the heat-exchanging means at the junction [2]

35/

characterised by the structure or configuration of the cell or thermo-couple forming the device [2]

35/

Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto H01L 21/00) [2]

37/

Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; measuring temperature based on thermoelectric or thermomagnetic elements G01K 7/00; selection of materials for magnetography, e.g. for Curie-point writing, G03G 5/00) [2]

37/

using thermal change of dielectric constant, e.g. working above and below the Curie point [2]

37/

using thermal change of magnetic permeability, e.g. working above and below the Curie point [2]

39/

Devices using superconductivity or hyperconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; superconductors characterised by the ceramic-forming technique or the ceramic composition C04B 35/00; superconductive or hyperconductive conductors, cables, or transmission lines H01B 12/00; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00) [2,4]

39/

Details [2]

39/

Containers; Mountings [2]

39/

characterised by the current path [2]

39/

characterised by the shape of the element [2]

39/

characterised by the means for switching [2]

39/

characterised by the material [2]

39/

Permanent superconductor devices [2]

39/

Devices switchable between superconductive and normal states [2]

39/

Cryotrons [2]

39/

Power cryotrons [2]

39/

Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices [2]

39/

Processes or apparatus peculiar to the manufacture or treatment of devices provided for in group H01L 39/00 or of parts thereof (not peculiar thereto H01L 21/00; magnetic separation of superconductive materials from other materials, e.g. using Meissner effect, B03C 1/00) [2]

41/

Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]

Notes

(1)

This group does not cover adaptations for particular purposes, which are covered by the relevant places. [6]

(2)

Attention is drawn to the following such places: [6]

B06B

for adaptations for generating or transmitting mechanical vibrations [6]

G01

for transducers as sensing elements for measuring [6]

G04C, G04F

for transducers adapted for use in time-pieces [6]

G10K

for adaptations for generating or transmitting sound [6]

H02N

for arrangements of elements in electric machines [6]

H03H 9/00

for networks comprising electro-mechanical or electro-acoustic elements, e.g. resonant circuits [6]

H04R

for loudspeakers, microphones, gramophone pick-ups or like transducers. [6]

41/

Details [2]

41/

of piezo-electric or electrostrictive elements [2]

41/

047

Electrodes [6]

41/

053

Mounts, supports, enclosures or casings [6]

41/

of magnetostrictive elements [2]

41/

Piezo-electric or electrostrictive elements [2]

Note

Groups H01L 41/083 and H01L 41/087 take precedence over groups H01L 41/09 to H01L 41/113. [6]

41/

083

having a stacked or multilayer structure [6]

41/

087

formed as coaxial cables [6]

41/

with electrical input and mechanical output [5]

41/

107

with electrical input and electrical output [5]

41/

113

with mechanical input and electrical output [5]

41/

Magnetostrictive elements [2]

41/

Selection of materials [2]

41/

for piezo-electric or electrostrictive elements [2]

41/

187

Ceramic compositions [5]

41/

193

Macromolecular compositions [5]

41/

for magnetostrictive elements [2]

41/

Processes or apparatus peculiar to the manufacture or treatment of these elements or of parts thereof (not peculiar thereto H01L 21/00) [2]

41/

of elements of ceramic composition [5]

41/

of elements of macromolecular composition [5]

43/

Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field H01L 29/82) [2]

43/

Details [2]

43/

of Hall-effect devices [2]

43/

Hall-effect devices [2]

43/

Magnetic-field-controlled resistors [2]

43/

Selection of materials [2]

43/

Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto H01L 21/00) [2]

43/

for Hall-effect devices [2]

45/

Solid state devices adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity or hyperconductivity H01L 39/00; piezo-electric elements H01L 41/00; bulk negative resistance effect devices H01L 47/00) [2]

45/

Solid state travelling-wave devices [2]

47/

Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) [2]

47/

Gunn-effect devices [2]

49/

Solid state devices not provided for in groups H01L 27/00 to H01L 47/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate H01L 27/00) [2]

49/

Thin-film or thick-film devices [2]

51/

Solid state devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, using organic materials as the active part, or using a combination of organic materials with other material as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (processes or apparatus for treatment of inorganic semiconductor bodies involving formation or treatment of organic layers thereon H01L 21/00, H01L 21/312, H01L 21/47) [6]

51/

Details of devices [6]

51/

Devices [6]

51/

Selection of materials [6]

51/

Processes or apparatus specially adapted for the manufacture or treatment of devices or of parts thereof [6]

Indexing scheme associated with group H01L 27/00, relating to integrated circuits. The indexing code should be unlinked. [5]

Note

Attention is drawn to Chapter IV of the Guide which sets forth the rules concerning the application and presentation of the different types of indexing code. [6]

101:

A_IIIB_V integrated circuits [5]

H01L 31/00 - H01L 31/20