IPC 7 English version H01L 27/00-H01L 29/96

IPC ⁷ English version

H01L 23/00 - H01L 25/18

H01L02700-H01L02996

H01L 31/00 - H01L 31/20

SECTION H – ELECTRICITY

H 01

BASIC ELECTRIC ELEMENTS

H 01 L

SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]

27/

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70, H01L 31/00 to H01L 49/00; details thereof H01L 23/00, H01L 29/00 to H01L 49/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K) [2]

Notes

(1)

In groups H01L 27/01 to H01L 27/26, in the absence of an indication to the contrary, classification is made in the last appropriate place. [2]

(2)

In this group, it is desirable to add the indexing code of group H01L 101:00. The indexing code should be unlinked. [5]

27/

comprising only passive thin-film or thick-film elements formed on a common insulating substrate [3]

27/

including semiconductor components adapted for rectifying, oscillating, amplifying, switching or including integrated passive circuit elements with at least one potential-jump barrier or surface barrier [2]

27/

the substrate being a semiconductor body [2]

27/

including a plurality of individual components in a non-repetitive configuration [2]

27/

the components having an active region in common [5]

27/

including only semiconductor components of a single kind [2]

27/

082

including bipolar components only [5]

27/

085

including field-effect components only [5]

27/

088

the components being field-effect transistors with insulated gate [5]

27/

092

complementary MIS field-effect transistors [5]

27/

095

the components being Schottky barrier gate field-effect transistors [5]

27/

098

the components being PN junction gate field-effect transistors [5]

27/

including a plurality of individual components in a repetitive configuration [2]

27/

102

including bipolar components [5]

27/

105

including field-effect components [5]

27/

108

Dynamic random access memory structures [5]

27/

Static random access memory structures [5]

27/

112

Read-only memory structures [5]

27/

115

Electrically programmable read-only memories [5]

27/

118

Masterslice integrated circuits [5]

27/

the substrate being other than a semiconductor body, e.g. an insulating body [2]

27/

combined with thin-film or thick-film passive components [3]

27/

including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of a shorter wavelength, or corpuscular radiation of a shorter wavelength, or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42) [2]

27/

142

Energy conversion devices [5]

27/

144

Devices controlled by radiation [5]

27/

146

Imager structures [5]

27/

148

Charge coupled imagers [5]

27/

including semiconductor components with at least one potential-jump barrier or surface barrier adapted for light emission [2]

27/

including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/38) [2]

27/

including components exhibiting superconductivity [2]

27/

including piezo-electric components; including electrostrictive components; including magnetostrictive components [2,7]

27/

including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects [2]

27/

including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier [2]

27/

including bulk negative resistance effect components [2]

29/

Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L 31/00 to H01L 47/00, H01L 51/00 take precedence; processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H01L 21/00; details other than of semiconductor bodies or of electrodes thereof H01L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; resistors in general H01C; capacitors in general H01G) [2,6]

Note

In this main group, classification is made both in groups H01L 29/02 to H01L 29/51 and in groups H01L 29/66 to H01L 29/96 if both of these sets of groups are relevant. [2]

29/

Semiconductor bodies [2]

29/

characterised by their crystalline structure, e.g. polycrystalline, cubic, particular orientation of crystalline planes (imperfections H01L 29/30) [2]

29/

characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions [2]

29/

with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]

29/

with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]

29/

characterised by the materials of which they are formed [2]

29/

Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices (such structures applied for the control of light G02F 1/017, applied in semiconductor lasers H01S 5/34) [6]

Note

Group H01L 29/15 takes precedence over groups H01L 29/16 to H01L 29/26. [6]

29/

including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form [2]

29/

161

including two or more of the elements provided for in group H01L 29/16 [2]

29/

165

in different semiconductor regions [2]

29/

167

further characterised by the doping material [2]

29/

Selenium or tellurium only, apart from doping materials or other impurities [2]

29/

including, apart from doping materials or other impurities, only A_IIIB_V compounds [2,6]

29/

201

including two or more compounds [2]

29/

205

in different semiconductor regions [2]

29/

207

further characterised by the doping material [2]

29/

including, apart from doping materials or other impurities, only A_IIB_VI compounds [2]

29/

221

including two or more compounds [2]

29/

225

in different semiconductor regions [2]

29/

227

further characterised by the doping material [2]

29/

including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22 (including organic materials H01L 51/00) [2]

29/

including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22, H01L 29/24 [2]

29/

267

in different semiconductor regions [2]

29/

characterised by physical imperfections; having polished or roughened surface [2]

29/

the imperfections being within the semiconductor body [2]

29/

the imperfections being on the surface [2]

29/

characterised by the concentration or distribution of impurities [2]

29/

characterised by combination of features provided for in two or more of the groups H01L 29/04, H01L 29/06, H01L 29/12, H01L 29/30, H01L 29/36 [2]

29/

Electrodes [2]

29/

characterised by their shape, relative sizes or dispositions [6]

29/

417

carrying the current to be rectified, amplified or switched [6]

29/

423

not carrying the current to be rectified, amplified or switched [6]

29/

characterised by the materials of which they are formed [6]

29/

Ohmic electrodes [6]

29/

Schottky barrier electrodes [6]

29/

Metal-insulator semiconductor electrodes [6]

29/

Insulating materials associated therewith [6]

29/

Types of semiconductor device [2]

29/

controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched (H01L 29/96 takes precedence) [2]

29/

Bipolar devices [2]

29/

Transistor-type devices, i.e. able to continuously respond to applied control signals [2]

29/

Bipolar junction transistors [5]

29/

732

Vertical transistors [6]

29/

735

Lateral transistors [6]

29/

737

Hetero-junction transistors [6]

29/

739

controlled by field effect [6]

29/

Thyristor-type devices, e.g. having four-zone regenerative action [2]

29/

744

Gate-turn-off devices [6]

29/

745

with turn-off by field effect [6]

29/

747

Bidirectional devices, e.g. triacs [2]

29/

749

with turn-on by field effect [6]

29/

Unipolar devices [2]

29/

762

Charge transfer devices [6]

29/

765

Charge-coupled devices [6]

29/

768

with field effect produced by an insulated gate [6]

29/

772

Field-effect transistors [6]

29/

775

with one-dimensional charge carrier gas channel, e.g. quantum wire FET [6]

29/

778

with two-dimensional charge carrier gas channel, e.g. HEMT [6]

29/

with field effect produced by an insulated gate [2]

29/

786

Thin-film transistors [6]

29/

788

with floating gate [5]

29/

792

with charge trapping gate insulator, e.g. MNOS-memory transistor [5]

29/

with field effect produced by a PN or other rectifying junction gate [2]

29/

808

with a PN junction gate [5]

29/

812

with a Schottky gate [5]

29/

controllable by variation of the magnetic field applied to the device (H01L 29/96 takes precedence) [2,6]

29/

controllable by variation of applied mechanical force, e.g. of pressure (H01L 29/96 takes precedence) [2,6]

29/

controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched (H01L 29/96 takes precedence) [2]

29/

8605

Resistors with PN junction [6]

29/

861

Diodes [6]

29/

862

Point contact diodes [6]

29/

864

Transit-time diodes, e.g. IMPATT, TRAPATT diodes [6]

29/

866

Zener diodes [6]

29/

868

PIN diodes [6]

29/

Thyristor diodes, e.g. Shockley diodes, break-over diodes [6]

29/

872

Schottky diodes [6]

29/

Tunnel-effect diodes [2]

29/

885

Esaki diodes [6]

29/

Capacitors with potential-jump barrier or surface barrier [2]

29/

Variable-capacitance diodes, e.g. varactors [2]

29/

Metal-insulator-semiconductors, e.g. MOS [2]

29/

of a type covered by more than one of groups H01L 29/68, H01L 29/82, H01L 29/84 or H01L 29/86 [2]

H01L 23/00 - H01L 25/18

H01L 31/00 - H01L 31/20