IPC 7 English version
 
H01L-H01L02198
  H01L 23/00 - H01L 25/18  

SECTION H – ELECTRICITY


H 01BASIC ELECTRIC ELEMENTS


H 01 LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B65G 49/07; use of semiconductor devices for measuring G01; details of scanning-probe apparatus, in general G12B 21/00; resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]


Notes

(1)This subclass covers:

 –electric solid state devices which are not covered by any other subclass and details thereof, and includes: semiconductor devices adapted for rectifying, amplifying, oscillating or switching; semiconductor devices sensitive to radiation; electric solid state devices using thermoelectric, superconductive, piezo-electric, electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and integrated circuit devices;  [2]

 –photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes and thin-film or thick-film circuits;  [2]

 –processes and apparatus adapted for the manufacture or treatment of such devices, except where such processes relate to single-step processes for which provision exists elsewhere.  [2]

(2)In this subclass, the following terms or expressions are used with the meanings indicated:

 –"solid state body" means the body of material within which, or at the surface of which, the physical effects characteristic of the device occur. In thermoelectric devices, it includes all materials in the current path.

 Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid state body electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto. An electrode may include several portions and the term includes metallic regions which exert influence on the solid state body through an insulating region (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, only those portions which exert an influence on the solid state body by virtue of their shape, size, or disposition or the material of which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangements for conducting electric current to or from the solid state body" or "interconnections between solid state components formed in or on a common substrate", i.e. leads;  [2]

 –"device" means an electric circuit element; where an electric circuit element is one of a plurality of elements formed in or on a common substrate it is referred to as a "component";  [2]

 –"complete device" is a device in its fully assembled state which may or may not require further treatment, e.g. electroforming, before it is ready for use but which does not require the addition of further structural units;  [2]

 –"parts" includes all structural units which are included in a complete device;  [2]

 –"container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body of the device is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation";  [2]

 –"integrated circuit" is a device where all components, e.g. diodes, resistors, are built up on a common substrate and form the device including interconnections between the components;  [2]

 –"assembly" of a device is the building up of the device from its component constructional units and includes the provision of fillings in containers.  [2]

(3)In this subclass, both the process or apparatus for the manufacture or treatment of a device and the device itself are classified, whenever both of these are described sufficiently to be of interest.  [6]


Subclass Index

SEMICONDUCTOR DEVICES 

Devices adapted for rectifying, amplifying, oscillating, or switching 

H01L 29/00 

Devices sensitive to, or emitting, radiation 

H01L 31/00, H01L 33/00 

SOLID STATE DEVICES USING ORGANIC MATERIALS 

H01L 51/00 

OTHER SOLID STATE DEVICES 

Thermoelectric or thermomagnetic devices 

H01L 35/00, H01L 37/00 

Superconductive or hyperconductive devices 

H01L 39/00 

Piezo-electric, electrostrictive or magnetostrictive elements in general 

H01L 41/00 

Galvano-magnetic devices 

H01L 43/00 

Devices without a potential-jump or a surface barrier; bulk negative resistance effect devices; devices not otherwise provided for 

H01L 45/00; H01L 47/00; H01L 49/00 

ASSEMBLIES OF SEMICONDUCTOR OR OTHER SOLID STATE DEVICES 

Assemblies of individual devices 

H01L 25/00 

Integrated circuits, thin-film or thick-film circuits 

H01L 27/00 

DETAILS 

H01L 23/00 

MANUFACTURE 

H01L 21/00 


21/

00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H01L 31/00 to H01L 49/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C, C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F) [2]

Note

 Groups H01L 21/70 to H01L 21/98 take precedence over groups H01L 21/02 to H01L 21/68.  [2]

21/

02.Manufacture or treatment of semiconductor devices or of parts thereof (characterised by the use of organic materials H01L 51/40)  [2]

21/

027..Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L 21/18 or H01L 21/34  [5]

21/

033...comprising inorganic layers  [5]

21/

04..the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer  [2]

21/

06...the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials  [2]

21/

08....Preparation of the foundation plate  [2]

21/

10....Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination  [2]

21/

103.....Conversion of the selenium or tellurium to the conductive state  [2]

21/

105.....Treatment of the surface of the selenium or tellurium layer after having been made conductive  [2]

21/

108.....Provision of discrete insulating layers, i.e. non-genetic barrier layers  [2]

21/

12....Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate  [2]

21/

14....Treatment of the complete device, e.g. by electroforming to form a barrier  [2]

21/

145.....Ageing  [2]

21/

16...the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide  [2]

21/

18...the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials [2,6,7]

Note

 This group covers also processes and apparatus which, by using the appropriate technology, are clearly suitable for manufacture or treatment of devices whose bodies comprise elements of the fourth group of the Periodic System or AIIIBV compounds, even if the material used is not explicitly specified. [7]

21/

20....Deposition of semiconductor materials on a substrate, e.g. epitaxial growth  [2]

21/

203.....using physical deposition, e.g. vacuum deposition, sputtering  [2]

21/

205.....using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition  [2]

21/

208.....using liquid deposition  [2]

21/

22....Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant  [2]

21/

223.....using diffusion into, or out of, a solid from or into a gaseous phase  [2]

21/

225.....using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer  [2]

21/

228.....using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes  [2]

21/

24....Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body  [2]

21/

26....Bombardment with wave or particle radiation (thermal treatment H01L 21/324)  [2]

21/

261.....to produce a nuclear reaction transmuting chemical elements  [6]

21/

263.....with high-energy radiation (H01L 21/261 takes precedence)  [2,6]

21/

265......producing ion implantation (ion-beam tubes for localised treatment H01J 37/30)  [2]

21/

266.......using masks  [5]

21/

268......using electromagnetic radiation, e.g. laser radiation  [2]

21/

28....Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20 to H01L 21/268  [2]

21/

283.....Deposition of conductive or insulating materials for electrodes  [2]

21/

285......from a gas or vapour, e.g. condensation  [2]

21/

288......from a liquid, e.g. electrolytic deposition  [2]

21/

30....Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20 to H01L 21/26 (manufacture of electrodes thereon H01L 21/28)  [2]

21/

301.....to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H01L 21/304)  [6]

21/

302.....to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting  [2]

21/

304......Mechanical treatment, e.g. grinding, polishing, cutting  [2]

21/

306......Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31; after-treatment of insulating layers H01L 21/3105)  [2]

21/

3063.......Electrolytic etching  [6]

21/

3065.......Plasma etching; Reactive-ion etching  [6]

21/

308.......using masks (H01L 21/3063, H01L 21/3065, take precedence)  [2,6]

21/

31.....to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/28; encapsulating layers H01L 21/56); After-treatment of these layers; Selection of materials for these layers  [2,5]

21/

3105......After-treatment  [5]

21/

311.......Etching the insulating layers  [5]

21/

3115.......Doping the insulating layers  [5]

21/

312......Organic layers, e.g. photoresist (H01L 21/3105, H01L 21/32 take precedence)  [2,5]

21/

314......Inorganic layers (H01L 21/3105, H01L 21/32 take precedence)  [2,5]

21/

316.......composed of oxides or glassy oxides or oxide-based glass  [2]

21/

318.......composed of nitrides  [2]

21/

32......using masks  [2,5]

21/

3205......Deposition of non-insulating-, e.g. conductive-, resistive-, layers, on insulating layers (arrangements for conducting electric current within the device H01L 23/52); After-treatment of these layers (manufacture of electrodes H01L 21/28)  [5]

21/

321.......After-treatment  [5]

21/

3213........Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer  [6]

21/

3215........Doping the layers  [5]

21/

322.....to modify their internal properties, e.g. to produce internal imperfections  [2]

21/

324.....Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20 to H01L 21/288, H01L 21/302 to H01L 21/322 take precedence)  [2]

21/

326.....Application of electric currents or fields, e.g. for electroforming (H01L 21/20 to H01L 21/288, H01L 21/302 to H01L 21/324 take precedence)  [2]

21/

328....Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors  [5]

21/

329.....the devices comprising one or two electrodes, e.g. diodes  [5]

21/

33.....the devices comprising three or more electrodes  [5]

21/

331......Transistors  [5]

21/

332......Thyristors  [5]

21/

334....Multistep processes for the manufacture of devices of the unipolar type  [5]

21/

335.....Field-effect transistors  [5]

21/

336......with an insulated gate  [5]

21/

337......with a PN junction gate  [5]

21/

338......with a Schottky gate  [5]

21/

339.....Charge transfer devices  [5,6]

21/

34...the devices having semiconductor bodies not provided for in groups H01L 21/06, H01L 21/16, and H01L 21/18 with or without impurities, e.g. doping materials  [2]

21/

36....Deposition of semiconductor materials on a substrate, e.g. epitaxial growth  [2]

21/

363.....using physical deposition, e.g. vacuum deposition, sputtering  [2]

21/

365.....using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition  [2]

21/

368.....using liquid deposition  [2]

21/

38....Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions  [2]

21/

383.....using diffusion into, or out of, a solid from or into a gaseous phase  [2]

21/

385.....using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer  [2]

21/

388.....using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes  [2]

21/

40....Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body  [2]

21/

42....Bombardment with radiation  [2]

21/

423.....with high-energy radiation  [2]

21/

425......producing ion implantation (ion-beam tubes for localised treatment H01J 37/30)  [2]

21/

426.......using masks  [5]

21/

428......using electromagnetic radiation, e.g. laser radiation  [2]

21/

44....Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36 to H01L 21/428  [2]

21/

441.....Deposition of conductive or insulating materials for electrodes  [2]

21/

443......from a gas or vapour, e.g. condensation  [2]

21/

445......from a liquid, e.g. electrolytic deposition  [2]

21/

447.....involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence)  [2]

21/

449.....involving the application of mechanical vibrations, e.g. ultrasonic vibrations  [2]

21/

46....Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36 to H01L 21/428 (manufacture of electrodes thereon H01L 21/44)  [2]

21/

461.....to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting  [2]

21/

463......Mechanical treatment, e.g. grinding, ultrasonic treatment  [2]

21/

465......Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469)  [2]

21/

467.......using masks  [2]

21/

469......to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/44; encapsulating layers H01L 21/56); After-treatment of these layers  [2,5]

21/

47.......Organic layers, e.g. photoresist (H01L 21/475, H01L 21/4757 take precedence)  [2,5]

21/

471.......Inorganic layers (H01L 21/475, H01L 21/4757 take precedence)  [2,5]

21/

473........composed of oxides or glassy oxides or oxide-based glass  [2]

21/

475.......using masks  [2,5]

21/

4757.......After-treatment  [5]

21/

4763......Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28)  [5]

21/

477.....Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36 to H01L 21/449, H01L 21/461 to H01L 21/475 take precedence)  [2]

21/

479.....Application of electric currents or fields, e.g. for electroforming (H01L 21/36 to H01L 21/449, H01L 21/461 to H01L 21/477 take precedence)  [2]

21/

48...Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L 21/06 to H01L 21/326 (containers, encapsulations, fillings, mountings per se H01L 23/00)  [2]

21/

50...Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L 21/06 to H01L 21/326  [2]

21/

52....Mounting semiconductor bodies in containers  [2]

21/

54....Providing fillings in containers, e.g. gas fillings  [2]

21/

56....Encapsulations, e.g. encapsulating layers, coatings  [2]

21/

58....Mounting semiconductor devices on supports  [2]

21/

60....Attaching leads or other conductive members, to be used for carrying current to or from the device in operation  [2]

21/

603.....involving the application of pressure, e.g. thermo-compression bonding (H01L 21/607 takes precedence)  [2]

21/

607.....involving the application of mechanical vibrations, e.g. ultrasonic vibrations  [2]

21/

62..the devices having no potential-jump barriers or surface barriers  [2]

21/

64.Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L 31/00 to H01L 49/00  [2]

21/

66.Testing or measuring during manufacture or treatment (after manufacture G01R 31/26)  [2]

21/

68.Apparatus for supporting or positioning components during manufacture, e.g. jigs  [2]

21/

70.Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00)  [2]

21/

71..Manufacture of specific parts of devices defined in group H01L 21/70 (H01L 21/28, H01L 21/44, H01L 21/48 take precedence)  [6]

21/

74...Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections  [2]

21/

76...Making of isolation regions between components  [2]

21/

761....PN junctions  [6]

21/

762....Dielectric regions  [6]

21/

763....Polycrystalline semiconductor regions  [6]

21/

764....Air gaps  [6]

21/

765....by field-effect  [6]

21/

768...Applying interconnections to be used for carrying current between separate components within a device  [6]

21/

77..Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate  [6]

21/

78...with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304)  [2,6]

21/

782....to produce devices, each consisting of a single circuit element (H01L 21/82 takes precedence)  [6]

21/

784.....the substrate being a semiconductor body  [6]

21/

786.....the substrate being other than a semiconductor body, e.g. insulating body  [6]

21/

82....to produce devices, e.g. integrated circuits, each consisting of a plurality of components  [2]

21/

822.....the substrate being a semiconductor, using silicon technology (H01L 21/8258 takes precedence)  [6]

21/

8222......Bipolar technology  [6]

21/

8224.......comprising a combination of vertical and lateral transistors  [6]

21/

8226.......comprising merged transistor logic or integrated injection logic  [6]

21/

8228.......Complementary devices, e.g. complementary transistors  [6]

21/

8229.......Memory structures  [6]

21/

8232......Field-effect technology  [6]

21/

8234.......MIS technology  [6]

21/

8236........Combination of enhancement and depletion transistors  [6]

21/

8238........Complementary field-effect transistors, e.g. CMOS  [6]

21/

8239........Memory structures  [6]

21/

8242.........Dynamic random access memory structures (DRAM)  [6]

21/

8244.........Static random access memory structures (SRAM)  [6]

21/

8246.........Read-only memory structures (ROM)  [6]

21/

8247..........electrically-programmable (EPROM)  [6]

21/

8248......Combination of bipolar and field-effect technology  [6]

21/

8249.......Bipolar and MOS technology  [6]

21/

8252.....the substrate being a semiconductor, using III-V technology (H01L 21/8258 takes precedence)  [6]

21/

8254.....the substrate being a semiconductor, using II-VI technology (H01L 21/8258 takes precedence)  [6]

21/

8256.....the substrate being a semiconductor, using technologies not covered by one of groups H01L 21/822, H01L 21/8252 or H01L 21/8254 (H01L 21/8258 takes precedence)  [6]

21/

8258.....the substrate being a semiconductor, using a combination of technologies covered by H01L 21/822, H01L 21/8252, H01L 21/8254 or H01L 21/8256  [6]

21/

84.....the substrate being other than a semiconductor body, e.g. being an insulating body  [2,6]

21/

86......the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS  [2,6]

21/

98..Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H01L 21/50 takes precedence; assemblies H01L 25/00)  [2,5]

   H01L 23/00 - H01L 25/18