IPC 7 English version G11C 13/00-G11C 29/00

IPC ⁷ English version

G11C - G11C 11/56

G11C01300-G11C02900

SECTION G – PHYSICS

G 11

INFORMATION STORAGE

G 11 C

STATIC STORES (information storage based on relative movement between record carrier and transducer G11B; semiconductor devices for storage H01L, e.g. H01L 27/108 to H01L 27/115; pulse technique in general H03K, e.g. electronic switches H03K 17/00)

13/

Digital stores characterised by the use of storage elements not covered by groups G11C 11/00, G11C 23/00, or G11C 25/00

13/

using elements whose operation depends upon chemical change (using electrochemical charge G11C 11/00)

13/

using optical elements

13/

using magneto-optical elements (magneto-optics in general G02F) [2]

14/

Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down [5]

15/

Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (in which information is addressed to a specific location G11C 11/00) [2]

15/

using magnetic elements [2]

15/

using semiconductor elements [2]

15/

using cryogenic elements [2]

16/

Erasable programmable read-only memories (G11C 14/00 takes precedence) [5]

16/

electrically programmable [5]

16/

using variable threshold transistors, e.g. FAMOS [5]

16/

Auxiliary circuits, e.g. for writing into memory (in general G11C 7/00) [5]

16/

Address circuits; Decoders; Word-line control circuits [7]

16/

Programming or data input circuits [7]

16/

Programming voltage switching circuits [7]

16/

Circuits for erasing electrically, e.g. erase voltage switching circuits [7]

16/

for erasing blocks, e.g. arrays, words, groups [7]

16/

Circuits for erasing optically [7]

16/

Initialising; Data preset; Chip identification [7]

16/

Safety or protection circuits preventing unauthorised or accidental access to memory cells [7]

16/

Bit-line control circuits [7]

16/

Sensing or reading circuits; Data output circuits [7]

16/

using differential sensing or reference cells, e.g. dummy cells [7]

16/

Power supply circuits [7]

16/

Timing circuits [7]

16/

Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention [7]

17/

Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (erasable programmable read-only memories G11C 16/00; coding, decoding or code conversion, in general H03M) [2,5]

17/

using magnetic or inductive elements (G11C 17/14 takes precedence) [2,5]

17/

using capacitive elements (G11C 17/06, G11C 17/14 take precedence) [2,5]

17/

using diode elements (G11C 17/14 takes precedence) [2,5]

17/

using semiconductor devices, e.g. bipolar elements (G11C 17/06, G11C 17/14 take precedence) [5]

17/

in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM [5]

17/

using field-effect devices [5]

17/

in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM [5]

17/

using electrically-fusible links [5]

17/

Auxiliary circuits, e.g. for writing into memory (in general G11C 7/00) [5]

19/

Digital stores in which the information is moved stepwise, e.g. shift registers (counting chains H03K 23/00)

19/

using magnetic elements (G11C 19/14 takes precedence) [2]

19/

using cores with one aperture or magnetic loop [2]

19/

using structures with a number of apertures or magnetic loops, e.g. transfluxors [2]

19/

using thin films in plane structure [2]

19/

using thin films on rods; with twistors [2]

19/

using non-linear reactive devices in resonant circuits [2]

19/

using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements (G11C 19/34 takes precedence) [2,7]

19/

using capacitors as main elements of the stages [2]

19/

using discharge tubes (G11C 19/14 takes precedence) [2]

19/

using semiconductor elements (G11C 19/14, G11C 19/36 take precedence) [2,7]

19/

using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled [2]

19/

using super-conductive elements [2]

19/

using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency [7]

19/

using semiconductor elements [7]

19/

two-dimensional, e.g. horizontal and vertical shift registers [7]

21/

Digital stores in which the information circulates (stepwise G11C 19/00)

21/

using electromechanical delay lines, e.g. using a mercury tank

23/

Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (storing by actuating contacts G11C 11/48)

25/

Digital stores characterised by the use of flowing media; Storage elements therefor

27/

Electric analogue stores, e.g. for storing instantaneous values

27/

Sample-and-hold arrangements (G11C 27/04 takes precedence; sampling electrical signals, in general H03K) [2,4]

27/

Shift registers (charge coupled devices per se H01L 29/76) [4]

29/

Checking stores for correct operation

G11C - G11C 11/56