IPC 7 English version
  C23 - C23C 10/60  
C23C01200-C23C01656
  C23C 18/00 - C23C 30/00  

SECTION C – CHEMISTRY; METALLURGY


C 23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL (by metallising textiles D06M 11/83; decorating textiles by locally metallising D06Q 1/04); CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (for specific applications, see the relevant places, e.g. for manufacturing resistors H01C 17/06); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL (treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D, C25F) [2]


C 23 CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (applying liquids or other fluent materials to surfaces in general B05; making metal-coated products by extrusion B21C 23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D 39/00, B23K; working of metal by the action of a high concentration of electric current on a workpiece using an electrode B23H; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B 41/00; paints, varnishes, laquers C09D; enamelling of, or applying a vitreous layer to, metals C23D; inhibiting corrosion of metallic material or incrustation in general C23F; single-crystal film growth C30B; details of scanning-probe apparatus, in general G12B 21/00; manufacture of semiconductor devices H01L; manufacture of printed circuits H05K) [4]


12/

00Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces  [4]

12/

02.Diffusion in one step  [4]


Coating by vacuum evaporation, by sputtering or by ion implantation  [4]


14/

00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material (discharge tubes with provision for introducing objects or material to be exposed to the discharge H01J 37/00) [4]

14/

02.Pretreatment of the material to be coated (C23C 14/04 takes precedence)  [4]

14/

04.Coating on selected surface areas, e.g. using masks  [4]

14/

06.characterised by the coating material (C23C 14/04 takes precedence)  [4]

14/

08..Oxides (C23C 14/10 takes precedence)  [4]

14/

10..Glass or silica  [4]

14/

12..Organic material  [4]

14/

14..Metallic material, boron or silicon  [4]

14/

16...on metallic substrates or on substrates of boron or silicon  [4]

14/

18...on other inorganic substrates  [4]

14/

20...on organic substrates  [4]

14/

22.characterised by the process of coating  [4]

14/

24..Vacuum evaporation  [4]

14/

26...by resistance or inductive heating of the source  [4]

14/

28...by wave energy or particle radiation (C23C 14/32 to C23C 14/48 take precedence)  [4]

14/

30....by electron bombardment  [4]

14/

32...by explosion; by evaporation and subsequent ionisation of the vapours (C23C 14/34 to C23C 14/48 take precedence)  [4]

14/

34..Sputtering  [4]

14/

35...by application of a magnetic field, e.g. magnetron sputtering  [5]

14/

36...Diode sputtering (C23C 14/35 takes precedence)  [4,5]

14/

38....by direct current glow discharge  [4]

14/

40....with alternating current discharge, e.g. high-frequency discharge  [4]

14/

42...Triode sputtering (C23C 14/35 takes precedence)  [4,5]

14/

44....by application of high frequencies and additional direct voltages  [4]

14/

46...by ion beam produced by an external ion source (C23C 14/40 takes precedence)  [4]

14/

48..Ion implantation  [4]

14/

50..Substrate holders  [4]

14/

52..Means for observation of the coating process  [4]

14/

54..Controlling or regulating the coating process (controlling or regulating in general G05)  [4]

14/

56..Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks  [4]

14/

58.After-treatment  [4]


Chemical deposition or plating by decomposition; Contact plating (solid state diffusion C23C 8/00 to C23C 12/00)  [4]


16/

00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes (reactive sputtering or vacuum evaporation C23C 14/00) [4]

16/

01.on temporary substrates, e.g. on substrates subsequently removed by etching [7]

 

16/

02.Pretreatment of the material to be coated (C23C 16/04 takes precedence)  [4]

16/

04.Coating on selected surface areas, e.g. using masks  [4]

16/

06.characterised by the deposition of metallic material  [4]

16/

08..from metal halides  [4]

16/

10...Deposition of chromium only  [4]

16/

12...Deposition of aluminium only  [4]

16/

14...Deposition of only one other metal element  [4]

16/

16..from metal carbonyl compounds  [4]

16/

18..from metallo-organic compounds  [4]

16/

20...Deposition of aluminium only  [4]

16/

22.characterised by the deposition of inorganic material, other than metallic material  [4]

16/

24..Deposition of silicon only  [4]

16/

26..Deposition of carbon only  [4]

16/

27...Diamond only [7]

 

16/

28..Deposition of only one other non-metal element  [4]

16/

30..Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides  [4]

16/

32...Carbides  [4]

16/

34...Nitrides  [4]

16/

36...Carbo-nitrides  [4]

16/

38...Borides  [4]

16/

40...Oxides  [4]

16/

42...Silicides  [4]

16/

44.characterised by the method of coating (C23C 16/04 takes precedence)  [4]

16/

442..using fluidised bed processes [7]

 

16/

448..characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials [7]

 

16/

452...by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species [7]

 

16/

453..passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD (C23C 16/513 takes precedence; for flame or plasma spraying of coating material in the molten state C23C 4/00) [7]

 

16/

455..characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber [7]

 

16/

458..characterised by the method used for supporting substrates in the reaction chamber [7]

 

16/

46..characterised by the method used for heating the substrate (C23C 16/48, C23C 16/50 take precedence)  [4]

16/

48..by irradiation, e.g. photolysis, radiolysis, particle radiation  [4]

16/

50..using electric discharges  [4]

16/

503...using dc or ac discharges [7]

 

16/

505...using radio frequency discharges [7]

 

16/

507....using external electrodes, e.g. in tunnel type reactors [7]

 

16/

509....using internal electrodes [7]

 

16/

511...using microwave discharges [7]

 

16/

513...using plasma jets [7]

 

16/

515...using pulsed discharges [7]

 

16/

517...using a combination of discharges covered by two or more of groups C23C 16/503 to C23C 16/515  [7]

 

16/

52..Controlling or regulating the coating process (controlling or regulating in general G05)  [4]

16/

54..Apparatus specially adapted for continuous coating  [4]

16/

56.After-treatment  [4]

  C23 - C23C 10/60    C23C 18/00 - C23C 30/00