IPC 6 English version H01L !A-H01L 21/98

H01L-H01L02198

SECTION H– ELECTRICITY

H 01

BASIC ELECTRIC ELEMENTS

H 01 L

SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B 65 G 49/07; use of semiconductor devices for measuring G 01; resistors in general H 01 C; magnets, inductors, transformers H 01 F; capacitors in general H 01 G; electrolytic devices H 01 G 9/00; batteries, accumulators H 01 M; waveguides, resonators, or lines of the waveguide type H 01 P; line connectors, current collectors H 01 R; stimulated-emission devices H 01 S; electromechanical resonators H 03 H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H 04 R; electric light sources in general H 05 B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H 05 K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]

Notes

(1)

This subclass covers:

–

electric solid state devices which are not covered by any other subclass and details thereof, and includes: semiconductor devices adapted for rectifying, amplifying, oscillating or switching; semiconductor devices sensitive to radiation; electric solid state devices using thermoelectric, superconductive, piezo-electric, electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and integrated circuit devices; [2]

–

photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes and thin-film or thick-film circuits; [2]

–

processes and apparatus adapted for the manufacture or treatment of such devices, except where such processes relate to single-step processes for which provision exists elsewhere. [2]

(2)

In this subclass, the following terms or expressions are used with the meanings indicated:

–

"solid state body" means the body of material within which, or at the surface of which, the physical effects characteristic of the device occur. In thermoelectric devices, it includes all materials in the current path.

Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid state body electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto. An electrode may include several portions and the term includes metallic regions which exert influence on the solid state body through an insulating region (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, only those portions which exert an influence on the solid state body by virtue of their shape, size, or disposition or the material of which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangements for conducting electric current to or from the solid state body" or "interconnections between solid state components formed in or on a common substrate", i.e. leads; [2]

–

"device" means an electric circuit element; where an electric circuit element is one of a plurality of elements formed in or on a common substrate it is referred to as a "component"; [2]

–

"complete device" is a device in its fully assembled state which may or may not require further treatment, e.g. electroforming, before it is ready for use but which does not require the addition of further structural units; [2]

–

"parts" includes all structural units which are included in a complete device; [2]

–

"container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body of the device is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation"; [2]

–

"integrated circuit" is a device where all components, e.g. diodes, resistors, are built up on a common substrate and form the device including interconnections between the components; [2]

–

"assembly" of a device is the building up of the device from its component constructional units and includes the provision of fillings in containers. [2]

(3)

In this subclass, both the process or apparatus for the manufacture or treatment of a device and the device itself are classified, whenever both of these are described sufficiently to be of interest. [6]

21/

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H 01 L 31/00 to H 01 L 49/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C 23 C, C 30 B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G 03 F) [2]

Note

Groups H 01 L 21/70 to H 01 L 21/98 take precedence over groups H 01 L 21/02 to H 01 L 21/68. [2]

21/

Manufacture or treatment of semiconductor devices or of parts thereof (characterised by the use of organic materials H 01 L 51/40) [2]

21/

027

Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H 01 L 21/18 or H 01 L 21/34 [5]

21/

033

comprising inorganic layers [5]

21/

the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer [2]

21/

the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials [2]

21/

Preparation of the foundation plate [2]

21/

Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination [2]

21/

103

Conversion of the selenium or tellurium to the conductive state [2]

21/

105

Treatment of the surface of the selenium or tellurium layer after having been made conductive [2]

21/

108

Provision of discrete insulating layers, i.e. non-genetic barrier layers [2]

21/

Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate [2]

21/

Treatment of the complete device, e.g. by electroforming to form a barrier [2]

21/

145

Ageing [2]

21/

the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide [2]

21/

the devices having semiconductor bodies comprising unspecified elements or elements of the fourth group of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials (processes or apparatus for devices whose bodies comprise unspecified elements but clearly not relevant to devices comprising elements of the fourth group or A_IIIB_V compounds H 01 L 21/06, H 01 L 21/16 or H 01 L 21/34) [2,6]

21/

Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]

21/

203

using physical deposition, e.g. vacuum deposition, sputtering [2]

21/

205

using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]

21/

208

using liquid deposition [2]

21/

Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant [2]

21/

223

using diffusion into, or out of, a solid from or into a gaseous phase [2]

21/

225

using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]

21/

228

using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]

21/

Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]

21/

Bombardment with wave or particle radiation (thermal treatment H 01 L 21/324) [2]

21/

261

to produce a nuclear reaction transmuting chemical elements [6]

21/

263

with high-energy radiation (H 01 L 21/261 takes precedence) [2,6]

21/

265

producing ion implantation (ion-beam tubes for localised treatment H 01 J 37/30) [2]

21/

266

using masks [5]

21/

268

using electromagnetic radiation, e.g. laser radiation [2]

21/

Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/20 to H 01 L 21/268 [2]

21/

283

Deposition of conductive or insulating materials for electrodes [2]

21/

285

from a gas or vapour, e.g. condensation [2]

21/

288

from a liquid, e.g. electrolytic deposition [2]

21/

Treatment of semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/20 to H 01 L 21/26 (manufacture of electrodes thereon H 01 L 21/28) [2]

21/

301

to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H 01 L 21/304) [6]

21/

302

to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting [2]

21/

304

Mechanical treatment, e.g. grinding, polishing, cutting [2]

21/

306

Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H 01 L 21/31; after-treatment of insulating layers H 01 L 21/3105) [2]

21/

3063

Electrolytic etching [6]

21/

3065

Plasma etching; Reactive-ion etching [6]

21/

308

using masks (H 01 L 21/3063, H 01 L 21/3065, take precedence) [2,6]

21/

to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H 01 L 21/28; encapsulating layers H 01 L 21/56); After-treatment of these layers; Selection of materials for these layers [2,5]

21/

3105

After-treatment [5]

21/

311

Etching the insulating layers [5]

21/

3115

Doping the insulating layers [5]

21/

312

Organic layers, e.g. photoresist (H 01 L 21/3105, H 01 L 21/32 take precedence) [2,5]

21/

314

Inorganic layers (H 01 L 21/3105, H 01 L 21/32 take precedence) [2,5]

21/

316

composed of oxides or glassy oxides or oxide-based glass [2]

21/

318

composed of nitrides [2]

21/

using masks [2,5]

21/

3205

Deposition of non-insulating-, e.g. conductive-, resistive-, layers, on insulating layers (arrangements for conducting electric current within the device H 01 L 23/52); After-treatment of these layers (manufacture of electrodes H 01 L 21/28) [5]

21/

321

After-treatment [5]

21/

3213

Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer [6]

21/

3215

Doping the layers [5]

21/

322

to modify their internal properties, e.g. to produce internal imperfections [2]

21/

324

Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H 01 L 21/20 to H 01 L 21/288, H 01 L 21/302 to H 01 L 21/322 take precedence) [2]

21/

326

Application of electric currents or fields, e.g. for electroforming (H 01 L 21/20 to H 01 L 21/288, H 01 L 21/302 to H 01 L 21/324 take precedence) [2]

21/

328

Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors [5]

21/

329

the devices comprising one or two electrodes, e.g. diodes [5]

21/

the devices comprising three or more electrodes [5]

21/

331

Transistors [5]

21/

332

Thyristors [5]

21/

334

Multistep processes for the manufacture of devices of the unipolar type [5]

21/

335

Field-effect transistors [5]

21/

336

with an insulated gate [5]

21/

337

with a PN junction gate [5]

21/

338

with a Schottky gate [5]

21/

339

Charge transfer devices [5,6]

21/

the devices having semiconductor bodies not provided for in groups H 01 L 21/06, H 01 L 21/16, and H 01 L 21/18 with or without impurities, e.g. doping materials [2]

21/

Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]

21/

363

using physical deposition, e.g. vacuum deposition, sputtering [2]

21/

365

using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]

21/

368

using liquid deposition [2]

21/

Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2]

21/

383

using diffusion into, or out of, a solid from or into a gaseous phase [2]

21/

385

using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]

21/

388

using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]

21/

Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]

21/

Bombardment with radiation [2]

21/

423

with high-energy radiation [2]

21/

425

producing ion implantation (ion-beam tubes for localised treatment H 01 J 37/30) [2]

21/

426

using masks [5]

21/

428

using electromagnetic radiation, e.g. laser radiation [2]

21/

Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/36 to H 01 L 21/428 [2]

21/

441

Deposition of conductive or insulating materials for electrodes [2]

21/

443

from a gas or vapour, e.g. condensation [2]

21/

445

from a liquid, e.g. electrolytic deposition [2]

21/

447

involving the application of pressure, e.g. thermo-compression bonding (H 01 L 21/607 takes precedence) [2]

21/

449

involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]

21/

Treatment of semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/36 to H 01 L 21/428 (manufacture of electrodes thereon H 01 L 21/44) [2]

21/

461

to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2]

21/

463

Mechanical treatment, e.g. grinding, ultrasonic treatment [2]

21/

465

Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H 01 L 21/469) [2]

21/

467

using masks [2]

21/

469

to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H 01 L 21/44; encapsulating layers H 01 L 21/56); After-treatment of these layers [2,5]

21/

Organic layers, e.g. photoresist (H 01 L 21/475, H 01 L 21/4757 take precedence) [2,5]

21/

471

Inorganic layers (H 01 L 21/475, H 01 L 21/4757 take precedence) [2,5]

21/

473

composed of oxides or glassy oxides or oxide-based glass [2]

21/

475

using masks [2,5]

21/

4757

After-treatment [5]

21/

4763

Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H 01 L 21/28) [5]

21/

477

Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H 01 L 21/36 to H 01 L 21/449, H 01 L 21/461 to H 01 L 21/475 take precedence) [2]

21/

479

Application of electric currents or fields, e.g. for electroforming (H 01 L 21/36 to H 01 L 21/449, H 01 L 21/461 to H 01 L 21/477 take precedence) [2]

21/

Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H 01 L 21/06 to H 01 L 21/326 (containers, encapsulations, fillings, mountings per se H 01 L 23/00) [2]

21/

Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H 01 L 21/06 to H 01 L 21/326 [2]

21/

Mounting semiconductor bodies in containers [2]

21/

Providing fillings in containers, e.g. gas fillings [2]

21/

Encapsulations, e.g. encapsulating layers, coatings [2]

21/

Mounting semiconductor devices on supports [2]

21/

Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2]

21/

603

involving the application of pressure, e.g. thermo-compression bonding (H 01 L 21/607 takes precedence) [2]

21/

607

involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]

21/

the devices having no potential-jump barriers or surface barriers [2]

21/

Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H 01 L 31/00 to H 01 L 49/00 [2]

21/

Testing or measuring during manufacture or treatment (after manufacture G 01 R 31/26) [2]

21/

Apparatus for supporting or positioning components during manufacture, e.g. jigs [2]

21/

Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H 05 K 3/00, H 05 K 13/00) [2]

21/

Manufacture of specific parts of devices defined in group H 01 L 21/70 (H 01 L 21/28, H 01 L 21/44, H 01 L 21/48 take precedence) [6]

21/

(transferred to H 01 L 21/784, H 01 L 21/822, H 01 L 21/8258)

21/

Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2]

21/

Making of isolation regions between components [2]

21/

761

PN junctions [6]

21/

762

Dielectric regions [6]

21/

763

Polycrystalline semiconductor regions [6]

21/

764

Air gaps [6]

21/

765

by field-effect [6]

21/

768

Applying interconnections to be used for carrying current between separate components within a device [6]

21/

Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate [6]

21/

with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H 01 L 21/304) [2,6]

21/

782

to produce devices, each consisting of a single circuit element (H 01 L 21/82 takes precedence) [6]

21/

784

the substrate being a semiconductor body [6]

21/

786

the substrate being other than a semiconductor body, e.g. insulating body [6]

21/

(transferred to H 01 L 21/78)

21/

to produce devices, e.g. integrated circuits, each consisting of a plurality of components [2]

21/

822

the substrate being a semiconductor, using silicon technology (H 01 L 21/8258 takes precedence) [6]

21/

8222

Bipolar technology [6]

21/

8224

comprising a combination of vertical and lateral transistors [6]

21/

8226

comprising merged transistor logic or integrated injection logic [6]

21/

8228

Complementary devices, e.g. complementary transistors [6]

21/

8229

Memory structures [6]

21/

8232

Field-effect technology [6]

21/

8234

MIS technology [6]

21/

8236

Combination of enhancement and depletion transistors [6]

21/

8238

Complementary field-effect transistors, e.g. CMOS [6]

21/

8239

Memory structures [6]

21/

8242

Dynamic random access memory structures (DRAM) [6]

21/

8244

Static random access memory structures (SRAM) [6]

21/

8246

Read-only memory structures (ROM) [6]

21/

8247

electrically-programmable (EPROM) [6]

21/

8248

Combination of bipolar and field-effect technology [6]

21/

8249

Bipolar and MOS technology [6]

21/

8252

the substrate being a semiconductor, using III-V technology (H 01 L 21/8258 takes precedence) [6]

21/

8254

the substrate being a semiconductor, using II-VI technology (H 01 L 21/8258 takes precedence) [6]

21/

8256

the substrate being a semiconductor, using technologies not covered by one of groups H 01 L 21/822, H 01 L 21/8252 or H 01 L 21/8254 (H 01 L 21/8258 takes precedence) [6]

21/

8258

the substrate being a semiconductor, using a combination of technologies covered by H 01 L 21/822, H 01 L 21/8252, H 01 L 21/8254 or H 01 L 21/8256 [6]

21/

the substrate being other than a semiconductor body, e.g. being an insulating body [2,6]

21/

the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS [2,6]

21/

(transferred to H 01 L 21/768)

21/

Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H 01 L 21/50 takes precedence; assemblies H 01 L 25/00) [2,5]

H01L 23/00 - H01L 25/18