IPC 6 English version C30B 21/00-C30B 35/00

C30B02100-C30B03500

SECTION C– CHEMISTRY; METALLURGY

C 30

CRYSTAL GROWTH (separation by crystallisation in general B 01 D 9/00) [3]

C 30 B

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B 01 J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C 22 B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B 22 D; working of plastics B 29; modifying the physical structure of metals or alloys C 21 D, C 22 F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H 01 L); APPARATUS THEREFOR [3]

21/

Unidirectional solidification of eutectic materials [3]

21/

by normal casting or gradient freezing [3]

21/

by zone-melting [3]

21/

by pulling from a melt [3]

Single-crystal growth from vapours [3]

23/

Single-crystal growth by condensing evaporated or sublimed materials [3]

23/

Epitaxial-layer growth [3]

23/

Pattern deposit, e.g. by using masks [3]

23/

Heating of the deposition chamber, the substrate, or the materials to be evaporated [3]

23/

by condensing ionised vapours (by reactive sputtering C 30 B 25/06) [3]

25/

Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth [3]

25/

Epitaxial-layer growth [3]

25/

Pattern deposit, e.g. by using masks [3]

25/

by reactive sputtering [3]

25/

Reaction chambers; Selection of materials therefor [3]

25/

Heating of the reaction chamber or the substrate [3]

25/

Substrate holders or susceptors [3]

25/

Feed and outlet means for the gases; Modifying the flow of the reactive gases [3]

25/

Controlling or regulating (controlling or regulating in general G 05) [3]

25/

characterised by the substrate [3]

25/

the substrate being of the same materials as the epitaxial layer [3]

25/

Sandwich processes [3]

27/

Single-crystal growth under a protective fluid [3]

27/

by pulling from a melt [3]

28/

Production of homogeneous polycrystalline material with defined structure [5]

28/

directly from the solid state [5]

28/

from liquids [5]

28/

by normal freezing or freezing under temperature gradient [5]

28/

by zone-melting [5]

28/

by pulling from a melt [5]

28/

directly from the gas state [5]

28/

by chemical reaction of reactive gases [5]

29/

Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (alloys C 22 C) [3,5]

Note

In groups C 30 B 29/02 to C 30 B 29/58, in the absence of an indication to the contrary, a material is classified in the last appropriate place. [3]

29/

Elements [3]

29/

Diamond [3]

29/

Silicon [3]

29/

Germanium [3]

29/

Inorganic compounds or compositions [3]

29/

Halides [3]

29/

Phosphates [3]

29/

Oxides [3]

29/

Quartz [3]

29/

Aluminium oxides [3]

29/

Complex oxides [3]

29/

with formula AMeO₃, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites [3]

29/

with formula BMe₂O₄, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [3]

29/

with formula A₃Me₅O₁₂, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [3]

29/

Niobates; Vanadates; Tantalates [3]

29/

Titanates; Germanates; Molybdates; Tungstates [3]

29/

Silicates [3]

29/

Carbides [3]

29/

Nitrides [3]

29/

A_IIIB_V compounds [3]

29/

Gallium arsenide [3]

29/

Gallium phosphide [3]

29/

Sulfur-, selenium- or tellurium-containing compounds [3]

29/

A_IIB_VI compounds [3]

29/

Cadmium sulfide [3]

29/

Alloys [3]

29/

Organic compounds [3]

29/

Tartrates [3]

29/

Macromolecular compounds [3]

29/

characterised by shape [3]

29/

Whiskers or needles [3]

29/

Flat crystals, e.g. plates, strips, disks [5]

29/

Crystals of complex geometrical shape, e.g. tubes, cylinders [5]

29/

Crystals with laminate structure, e.g. "superlattices" [5]

30/

Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [5]

Note

When classifying in this group, classification is also made in groups C 30 B 1/00 to C 30 B 28/00 according to the process of crystal growth. [5]

30/

using electric fields, e.g. electrolysis [5]

30/

using magnetic fields [5]

30/

using mechanical vibrations [5]

30/

in conditions of zero-gravity or low gravity [5]

After-treatment of single crystals or homogeneous polycrystalline material with defined structure [3,5]

31/

Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [3,5]

31/

by contacting with diffusion materials in the solid state [3]

31/

by contacting with diffusion materials in the liquid state [3]

31/

by contacting with diffusion material in the gaseous state (C 30 B 31/18 takes precedence) [3]

31/

the diffusion materials being a compound of the elements to be diffused [3]

31/

Reaction chambers; Selection of materials therefor [3]

31/

Heating of the reaction chamber [3]

31/

Substrate holders or susceptors [3]

31/

Feed and outlet means for the gases; Modifying the flow of the gases [3]

31/

Controlling or regulating (controlling or regulating in general G 05) [3]

31/

Doping by irradiation with electromagnetic waves or by particle radiation [3]

31/

by ion-implantation [3]

33/

After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C 30 B 31/00 takes precedence; grinding, polishing B 24; mechanical fine working of gems, jewels, crystals B 28 D 5/00) [3,5]

33/

Heat treatment (C 30 B 33/04, C 30 B 33/06 take precedence) [5]

33/

using electric or magnetic fields or particle radiation [5]

33/

Joining of crystals [5]

33/

Etching [5]

33/

in solutions or melts [5]

33/

in gas atmosphere or plasma [5]

35/

Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure [3,5]

C30 - C30B 19/12