IPC 6 English version C30B !A-C30B 19/12

C30-C30B01912

SECTION C– CHEMISTRY; METALLURGY

C 30

CRYSTAL GROWTH (separation by crystallisation in general B 01 D 9/00) [3]

C 30 B

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B 01 J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C 22 B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B 22 D; working of plastics B 29; modifying the physical structure of metals or alloys C 21 D, C 22 F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H 01 L); APPARATUS THEREFOR [3]

Notes

(1)

In this subclass, the following expressions are used with the meaning indicated:

–

"single crystal" includes also twin crystals and a predominantly single crystal product; [3]

–

"homogeneous polycrystalline material" means a material with crystal particles, all of which have the same chemical composition; [5]

–

"defined structure" means the structure of a material with grains which are oriented in a preferential way or have larger dimensions than normally obtained. [5]

(2)

In this subclass:

–

the preparation of single crystals or a homogeneous polycrystalline material with defined structure of particular materials or shapes is classified in the group for the process as well as in group C 30 B 29/00; [3]

–

an apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group C 30 B 35/00. [3]

Single-crystal growth from solids or gels [3]

Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C 30 B 3/00; under a protective fluid C 30 B 27/00) [3]

by thermal treatment, e.g. strain annealing (C 30 B 1/12 takes precedence) [3]

Isothermal recrystallisation [3]

Recrystallisation under a temperature gradient [3]

Zone recrystallisation [3]

by solid state reactions or multi-phase diffusion [3]

by pressure treatment during the growth [3]

Unidirectional demixing of eutectoid materials [3]

Single-crystal growth from gels (under a protective fluid C 30 B 27/00) [3]

with addition of doping materials [3]

Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [3]

Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C 30 B 9/00; by normal or gradient freezing C 30 B 11/00; under a protective fluid C 30 B 27/00) [3]

by evaporation of the solvent [3]

using aqueous solvents [3]

using non-aqueous solvents [3]

by cooling of the solution [3]

by application of pressure, e.g. hydrothermal processes [3]

by electrolysis [3]

the crystallising materials being formed by chemical reactions in the solution [3]

Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C 30 B 11/00; by zone-melting C 30 B 13/00; by crystal pulling C 30 B 15/00; on immersed seed crystal C 30 B 17/00; by liquid phase epitaxial growth C 30 B 19/00; under a protective fluid C 30 B 27/00) [3]

by evaporation of the molten solvent [3]

by cooling of the solution [3]

using as solvent a component of the crystal composition [3]

using other solvents [3]

Metal solvents [3]

Salt solvents, e.g. flux growth [3]

by electrolysis [3]

11/

Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C 30 B 13/00, C 30 B 15/00, C 30 B 17/00, C 30 B 19/00 take precedence; under a protective fluid C 30 B 27/00) [3]

11/

without using solvents (C 30 B 11/06 takes precedence) [3]

11/

adding crystallising materials or reactants forming it in situ to the melt [3]

11/

at least one but not all components of the crystal composition being added [3]

11/

every component of the crystal composition being added during the crystallisation [3]

11/

Solid or liquid components, e.g. Verneuil method [3]

11/

Vaporous components, e.g. vapour-liquid-solid-growth [3]

11/

characterised by the seed, e.g. its crystallographic orientation [3]

13/

Single-crystal growth by zone-melting; Refining by zone-melting (C 30 B 17/00 takes precedence; by changing the cross-section of the treated solid C 30 B 15/00; under a protective fluid C 30 B 27/00; for the growth of homogeneous polycrystalline material with defined structure C 30 B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) [3,5]

13/

Zone-melting with a solvent, e.g. travelling solvent process [3]

13/

Homogenisation by zone-levelling [3]

13/

the molten zone not extending over the whole cross-section [3]

13/

adding crystallising materials or reactants forming it in situ to the molten zone [3]

13/

with addition of doping materials [3]

13/

in the gaseous or vapour state [3]

13/

Crucibles or vessels [3]

13/

Heating of the molten zone [3]

13/

the heating element being in contact with, or immersed in, the molten zone [3]

13/

by induction, e.g. hot wire technique (C 30 B 13/18 takes precedence; induction coils H 05 B 6/36) [3]

13/

by irradiation or electric discharge [3]

13/

using electromagnetic waves [3]

13/

Stirring of the molten zone [3]

13/

Controlling or regulating (controlling or regulating in general G 05) [3]

13/

Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3]

13/

Mechanisms for moving either the charge or the heater [3]

13/

characterised by the seed, e.g. by its crystallographic orientation [3]

15/

Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C 30 B 27/00) [3]

15/

adding crystallising materials or reactants forming it in situ to the melt [3]

15/

adding doping materials, e.g. for n-p-junction [3]

15/

Non-vertical pulling [3]

15/

Downward pulling [3]

15/

Crucibles or containers for supporting the melt [3]

15/

Double crucible methods [3]

15/

Heating of the melt or the crystallised materials [3]

15/

by irradiation or electric discharge [3]

15/

using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3]

15/

Controlling or regulating (controlling or regulating in general G 05) [3]

15/

Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3]

15/

using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C 30 B 15/34) [3]

15/

using television detectors; using photo or X-ray detectors [3]

15/

using weight changes of the crystal or the melt, e.g. flotation methods [3]

15/

Mechanisms for rotating or moving either the melt or the crystal (flotation methods C 30 B 15/28) [3]

15/

Seed holders, e.g. chucks [3]

15/

Edge-defined film-fed crystal growth using dies or slits [3]

15/

characterised by the seed, e.g. its crystallographic orientation [3]

17/

Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C 30 B 15/00 takes precedence) [3]

19/

Liquid-phase epitaxial-layer growth [3]

19/

using molten solvents, e.g. flux [3]

19/

the solvent being a component of the crystal composition [3]

19/

Reaction chambers; Boats for supporting the melt; Substrate holders [3]

19/

Heating of the reaction chamber or the substrate [3]

19/

Controlling or regulating (controlling or regulating in general G 05) [3]

19/

characterised by the substrate [3]

C30B 21/00 - C30B 35/00