(0)H01L:7/7:
IPC6
SECTION H - ELECTRICITY
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT...
H01L
8/8
<<   >>   H01L041/00 - H01L101:00  

41
/ 00 Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H 01 L 27/00) [2]

Notes

(1)

 This group does not cover adaptations for particular purposes, which are covered by the relevant places. [6]

(2)

 Attention is drawn to the following such places: [6]
 

B 06 B

for adaptations for generating or transmitting mechanical vibrations [6]
 

G 01

for transducers as sensing elements for measuring [6]
 

G 04 C, G 04 F

for transducers adapted for use in time-pieces [6]
 

G 10 K

for adaptations for generating or transmitting sound [6]
 

H 02 N

for arrangements of elements in electric machines [6]
 

H 03 H 9/00

for networks comprising electro-mechanical or electro-acoustic elements, e.g. resonant circuits [6]
 

H 04 R

for loudspeakers, microphones, gramophone pick-ups or like transducers. [6]

41
/ 02 • Details [2]  

41
/ 04 • • of piezo-electric or electrostrictive elements [2]  

41
/ 047 • • • Electrodes [6]  

41
/ 053 • • • Mounts, supports, enclosures or casings [6]  

41
/ 06 • • of magnetostrictive elements [2]  

41
/ 08 • Piezo-electric or electrostrictive elements [2]  

Note
 

Groups H 01 L 41/083 and H 01 L 41/087 take precedence over groups H 01 L 41/09 to H 01 L 41/113. [6]

41
/ 083 • • having a stacked or multilayer structure [6]  

41
/ 087 • • formed as coaxial cables [6]  

41
/ 09 • • with electrical input and mechanical output [5]  

41
/ 107 • • with electrical input and electrical output [5]  

41
/ 113 • • with mechanical input and electrical output [5]  

41
/ 12 • Magnetostrictive elements [2]  

41
/ 16 • Selection of materials [2]  

41
/ 18 • • for piezo-electric or electrostrictive elements [2]  

41
/ 187 • • • Ceramic compositions [5]  

41
/ 193 • • • Macromolecular compositions [5]  

41
/ 20 • • for magnetostrictive elements [2]  

41
/ 22 • Processes or apparatus peculiar to the manufacture or treatment of these elements or of parts thereof (not peculiar thereto H 01 L 21/00) [2]  

41
/ 24 • • of elements of ceramic composition [5]  

41
/ 26 • • of elements of macromolecular composition [5]  
 

 43
/ 00 Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H 01 L 27/00 ; devices with potential-jump barrier or surface barrier controllable by variation of a magnetic field H 01 L 29/82) [2]

43
/ 02 • Details [2]  

43
/ 04 • • of Hall-effect devices [2]  

43
/ 06 • Hall-effect devices [2]  

43
/ 08 • Magnetic-field-controlled resistors [2]  

43
/ 10 • Selection of materials [2]  

43
/ 12 • Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto H 01 L 21/00) [2]  

43
/ 14 • • for Hall-effect devices [2]  
 

 45
/ 00 Solid state devices adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H 01 L 27/00; devices using superconductivity or hyperconductivity H 01 L 39/00; piezo-electric elements H 01 L 41/00; bulk negative resistance effect devices H 01 L 47/00) [2]

45
/ 02 • Solid state travelling-wave devices [2]  
 

 47
/ 00 Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H 01 L 27/00) [2]

47
/ 02 • Gunn-effect devices [2]  
 

 49
/ 00 Solid state devices not provided for in groups H 01 L 27/00 to H 01 L 47/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state devices formed in or on a common substrate H 01 L 27/00) [2]

49
/ 02 • Thin-film or thick-film devices [2]  
 

 51
/ 00 Solid state devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, using organic materials as the active part, or using a combination of organic materials with other material as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (processes or apparatus for treatment of inorganic semiconductor bodies involving formation or treatment of organic layers thereon H 01 L 21/00, H 01 L 21/312, H 01 L 21/47) [6]

51
/ 10 • Details of devices [6]  

51
/ 20 • Devices [6]  

51
/ 30 • Selection of materials [6]  

51
/ 40 • Processes or apparatus specially adapted for the manufacture or treatment of devices or of parts thereof [6]  

Indexing scheme associated with group H 01 L 27/00, relating to integrated circuits. The indexing code should be unlinked. [5]

Note
 

Attention is drawn to Chapter IV of the Guide which sets forth the rules concerning the application and presentation of the different types of indexing code. [6]
 

 101
: 00 AIIIBV integrated circuits [5]

 

 

 
<< >>
1 8 8