IPC6

SECTION H - ELECTRICITY SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT...

H01L 6/8

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H01L029/88 - H01L031/20

29 / 88 • • • • Tunnel-effect diodes [2]

29 / 885 • • • • • Esaki diodes [6]

29 / 90 to

29 / 91 (transferred to H 01 L 29/861 to H 01 L 29/885)

29 / 92 • • • Capacitors with potential-jump barrier or surface barrier [2]

29 / 93 • • • • Variable-capacitance diodes, e.g. varactors [2]

29 / 94 • • • • Metal-insulator-semiconductors, e.g. MOS [2]

29 / 95 (transferred to H 01 G 4/12)

29 / 96 • • of a type covered by more than one of groups H 01 L 29/68, H 01 L 29/82, H 01 L 29/84 or H 01 L 29/86 [2]

31 / 00 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (H 01 L 51/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H 01 L 27/00; roof covering aspects of energy collecting devices E 04 D 13/18; production of heat using solar heat F 24 J 2/00; measurement of X-radiation, gamma radiation, corpuscular radiation or cosmic radiation with semiconductor detectors G 01 T 1/24, with resistance detectors G 01 T 1/26; measurement of neutron radiation with semiconductor detectors G 01 T 3/08; couplings of light guides with optoelectronic elements G 02 B 6/42; obtaining energy from radioactive sources G 21 H) [2,6]

31 / 02 • Details [2]

31 / 0203 • • Containers; Encapsulations [5]

31 / 0216 • • Coatings [5]

31 / 0224 • • Electrodes [5]

31 / 0232 • • Optical elements or arrangements associated with the device [5]

31 / 0236 • • Special surface textures [5]

31 / 024 • • Arrangements for cooling, heating, ventilating or temperature compensation [5]

31 / 0248 • characterised by their semiconductor bodies [5]

31 / 0256 • • characterised by the material [5]

31 / 0264 • • • Inorganic materials [5]

31 / 0272 • • • • Selenium or tellurium [5]

31 / 028 • • • • including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System [5]

31 / 0288 • • • • • characterised by the doping material [5]

31 / 0296 • • • • including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe [5]

31 / 0304 • • • • including, apart from doping materials or other impurities, only AIIIBV compounds [5]

31 / 0312 • • • • including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC [5]

31 / 032 • • • • including, apart from doping materials or other impurities, only compounds not provided for in groups H 01 L 31/0272 to H 01 L 31/0312 [5]

31 / 0328 • • • • including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H 01 L 31/0272 to H 01 L 31/032 [5]

31 / 0336 • • • • • in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of the sixth group of the Periodic System [5]

31 / 0344 (transferred to H 01 L 51/00)

31 / 0352 • • characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions [5]

31 / 036 • • characterised by their crystalline structure or particular orientation of the crystalline planes [5]

31 / 0368 • • • including polycrystalline semiconductors (H 01 L 31/0392 takes precedence) [5]

31 / 0376 • • • including amorphous semiconductors (H 01 L 31/0392 takes precedence) [5]

31 / 0384 • • • including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material (H 01 L 31/0392 takes precedence) [5]

31 / 0392 • • • including thin films deposited on metallic or insulating substrates [5]

31 / 04 • adapted as conversion devices [2]

31 / 042 • • including a panel or array of photoelectric cells, e.g. solar cells [5]

31 / 045 • • • collapsible or foldable [5]

31 / 048 • • • encapsulated or with housing [5]

31 / 05 • • • characterised by special interconnection means [5]

31 / 052 • • • with cooling, light-reflecting or light- concentrating means [5]

31 / 055 • • • • where light is absorbed and re-emitted at a different wavelength by the concentrator, e.g. by using luminescent material [5]

31 / 058 • • • including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy (using solar heat in general F 24 J 2/00) [5]

31 / 06 • • characterised by at least one potential-jump barrier or surface barrier [2]

31 / 062 • • • the potential barriers being only of the metal-insulator-semiconductor type [5]

31 / 065 • • • the potential barriers being only of the graded gap type [5]

31 / 068 • • • the potential barriers being only of the PN homojunction type [5]

31 / 07 • • • the potential barriers being only of the Schottky type [5]

31 / 072 • • • the potential barriers being only of the PN heterojunction type [5]

31 / 075 • • • the potential barriers being only of the PIN type [5]

31 / 078 • • • including potential barriers provided for in two or more of groups H 01 L 31/062 to H 01 L 31/075 [5]

31 / 08 • in which radiation controls flow of current through the device, e.g. photoresistors [2]

31 / 09 • • Devices sensitive to infra-red, visible or ultra- violet radiation (H 01 L 31/101 takes precedence) [5]

31 / 10 • • characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors [2]

31 / 101 • • • Devices sensitive to infra-red, visible or ultra-violet radiation [5]

31 / 102 • • • • characterised by only one potential barrier or surface barrier [5]

31 / 103 • • • • • the potential barrier being of the PN homojunction type [5]

31 / 105 • • • • • the potential barrier being of the PIN type [5]

31 / 107 • • • • • the potential barrier working in avalanche mode, e.g. avalanche photodiode [5]

31 / 108 • • • • • the potential barrier being of the Schottky type [5]

31 / 109 • • • • • the potential barrier being of the PN heterojunction type [5]

31 / 11 • • • • characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor [5]

31 / 111 • • • • characterised by at least three potential barriers, e.g. photothyristor [5]

31 / 112 • • • • characterised by field-effect operation, e.g. junction field-effect photo- transistor [5]

31 / 113 • • • • • being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor [5]

31 / 115 • • • Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation [5]

31 / 117 • • • • of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors [5]

31 / 118 • • • • of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors [5]

31 / 119 • • • • characterised by field-effect operation, e.g. MIS type detectors [5]

31 / 12 • structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (semiconductor devices with at least one potential barrier or surface barrier adapted for light emission H 01 L 33/00; amplifiers using electroluminescent element and photocell H 03 F 17/00; electroluminescent light sources per se H 05 B 33/00) [2,5]

31 / 14 • • the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices [2]

31 / 147 • • • the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5]

31 / 153 • • • • formed in, or on, a common substrate [5]

31 / 16 • • the semiconductor device sensitive to radiation being controlled by the light source or sources [2]

31 / 167 • • • the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier [5]

31 / 173 • • • • formed in, or on, a common substrate [5]

31 / 18 • Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto H 01 L 21/00) [2]

31 / 20 • • such devices or parts thereof comprising amorphous semiconductor material [5]

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