(0)H01L:4/7:

(0)H01L:4/7:

IPC6

SECTION H - ELECTRICITY

SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT...

H01L

5/8

H01L029/00 - H01L029/872

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00

Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H 01 L 31/00 to H 01 L 47/00, H 01 L 51/00 take precedence; processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H 01 L 21/00; details other than of semiconductor bodies or of electrodes thereof H 01 L 23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H 01 L 27/00 ; resistors in general H 01 C; capacitors in general H 01 G) [2,6]

Note

In this main group, classification is made both in groups H 01 L 29/02 to H 01 L 29/51 and in groups H 01 L 29/66 to H 01 L 29/96 if both of these sets of groups are relevant. [2]

Semiconductor bodies [2]

characterised by their crystalline structure, e.g. polycrystalline, cubic, particular orientation of crystalline planes (imperfections H 01 L 29/30) [2]

characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions [2]

with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]

with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes [2]

characterised by the materials of which they are formed [2]

(covered by H 01 L 29/12)

Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices [6]

Note

Group H 01 L 29/15 takes precedence over groups H 01 L 29/16 to H 01 L 29/26. [6]

including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form [2]

including two or more of the elements provided for in group H 01 L 29/16 [2]

(covered by H 01 L 29/161)

in different semiconductor regions [2]

further characterised by the doping material [2]

Selenium or tellurium only, apart from doping materials or other impurities [2]

including, apart from doping materials or other impurities, only A_IIIB_V compounds [2,6]

including two or more compounds [2]

(covered by H 01 L 29/201)

in different semiconductor regions [2]

further characterised by the doping material [2]

including, apart from doping materials or other impurities, only A_IIB_VI compounds [2]

including two or more compounds [2]

(covered by H 01 L 29/221)

in different semiconductor regions [2]

further characterised by the doping material [2]

including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H 01 L 29/16, H 01 L 29/18, H 01 L 29/20, H 01 L 29/22 (including organic materials H 01 L 51/00) [2]

including, apart from doping materials or other impurities, elements provided for in two or more of the groups H 01 L 29/16, H 01 L 29/18, H 01 L 29/20, H 01 L 29/22, H 01 L 29/24 [2]

(covered by H 01 L 29/26)

in different semiconductor regions [2]

(transferred to H 01 L 51/00)

characterised by physical imperfections; having polished or roughened surface [2]

the imperfections being within the semiconductor body [2]

the imperfections being on the surface [2]

characterised by the concentration or distribution of impurities [2]

characterised by combination of features provided for in two or more of the groups H 01 L 29/04, H 01 L 29/06, H 01 L 29/12, H 01 L 29/30, H 01 L 29/36 [2]

characterised by their shape, relative sizes or dispositions [6]

carrying the current to be rectified, amplified or switched [6]

(transferred to H 01 L 29/41 to H 01 L 29/51)

not carrying the current to be rectified, amplified or switched [6]

characterised by the materials of which they are formed [6]

(transferred to H 01 L 29/41 to H 01 L 29/51)

Ohmic electrodes [6]

(transferred to H 01 L 29/41 to H 01 L 29/51)

Schottky barrier electrodes [6]

(transferred to H 01 L 29/41 to H 01 L 29/51 )

Metal-insulator semiconductor electrodes [6]

(transferred to H 01 L 29/41 to H 01 L 29/51)

Insulating materials associated therewith [6]

(transferred to H 01 L 29/41 to H 01 L 29/51)

Types of semiconductor device [2]

controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched (H 01 L 29/96 takes precedence) [2]

Bipolar devices [2]

Transistor-type devices, i.e. able to continuously respond to applied control signals [2]

Bipolar junction transistors [5]

Vertical transistors [6]

Lateral transistors [6]

Hetero-junction transistors [6]

controlled by field effect [6]

Thyristor-type devices, e.g. having four-zone regenerative action [2]

(covered by H 01 L 29/74)

Gate-turn-off devices [6]

with turn-off by field effect [6]

Bidirectional devices, e.g. triacs [2]

with turn-on by field effect [6]

Unipolar devices [2]

Charge transfer devices [6]

Charge-coupled devices [6]

with field effect produced by an insulated gate [6]

Field-effect transistors [6]

with one-dimensional charge carrier gas channel, e.g. quantum wire FET [6]

with two-dimensional charge carrier gas channel, e.g. HEMT [6]

with field effect produced by an insulated gate [2]

(transferred to H 01 L 29/772, covered by H 01 L 29/78)

Thin-film transistors [6]

with floating gate [5]

with charge trapping gate insulator, e.g. MNOS-memory transistor [5]

(transferred to H 01 L 29/768)

with field effect produced by a PN or other rectifying junction gate [2]

(transferred to H 01 L 29/772, covered by H 01 L 29/80)

with a PN junction gate [5]

with a Schottky gate [5]

(transferred to H 01 L 29/765)

controllable by variation of the magnetic field applied to the device (H 01 L 29/96 takes precedence) [2,6]

controllable by variation of applied mechanical force, e.g. of pressure (H 01 L 29/96 takes precedence) [2,6]

controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched (H 01 L 29/96 takes precedence) [2]

Resistors with PN junction [6]

Point contact diodes [6]

Transit-time diodes, e.g. IMPATT, TRAPATT diodes [6]

Zener diodes [6]

PIN diodes [6]

Thyristor diodes, e.g. Shockley diodes, break-over diodes [6]

Schottky diodes [6]

5