(0)H01L:3/7:
IPC6
SECTION H - ELECTRICITY
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT...
H01L
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<<   >>   H01L025/00 - H01L027/26  

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/ 00 Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H 01 L 27/00; assemblies of photoelectronic cells H 01 L 31/042; generators using solar cells or solar panels H 02 N 6/00; details of complete circuit assemblies provided for in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H 04 N; details of assemblies of electrical components in general H 05 K) [2,5]

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/ 03 • all the devices being of a type provided for in the same subgroup of groups H 01 L 27/00 to H 01 L 49/00, e.g. assemblies of rectifier diodes [5]  

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/ 04 • • the devices not having separate containers [2]  

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/ 065 • • • the devices being of a type provided for in group H 01 L 27/00 [5]  

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/ 07 • • • the devices being of a type provided for in group H 01 L 29/00 [5]  

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/ 075 • • • the devices being of a type provided for in group H 01 L 33/00 [5]  

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/ 10 • • the devices having separate containers [2]  

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/ 11 • • • the devices being of a type provided for in group H 01 L 29/00 [5]  

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/ 13 • • • the devices being of a type provided for in group H 01 L 33/00 [5]  

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/ 16 • the devices being of types provided for in two or more different main groups of groups H 01 L 27/00 to H 01 L 49/00, e.g. forming hybrid circuits [2]  

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/ 18 • the devices being of types provided for in two or more different subgroups of the same main group of groups H 01 L 27/00 to H 01 L 49/00 [5]  
 

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/ 00 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (processes or apparatus adapted for the manufacture or treatment thereof or of parts thereof H 01 L 21/70, H 01 L 31/00 to H 01 L 49/00; details thereof H 01 L 23/00, H 01 L 29/00 to H 01 L 49/00; assemblies consisting of a plurality of individual solid state devices H 01 L 25/00; assemblies of electrical components in general H 05 K) [2]

Notes

(1)

 In groups H 01 L 27/01 to H 01 L 27/26, in the absence of an indication to the contrary, classification is made in the last appropriate place. [2]

(2)

 In this group, it is desirable to add the indexing code of group H 01 L 101:00. The indexing code should be unlinked. [5]

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/ 01 • comprising only passive thin-film or thick-film elements formed on a common insulating substrate [3]  

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/ 02 • including semiconductor components adapted for rectifying, oscillating, amplifying, switching or including integrated passive circuit elements with at least one potential-jump barrier or surface barrier [2]  

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/ 04 • • the substrate being a semiconductor body [2]  

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/ 06 • • • including a plurality of individual components in a non-repetitive configuration [2]  

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/ 07 • • • • the components having an active region in common [5]  

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/ 08 • • • including only semiconductor components of a single kind [2]  

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/ 082 • • • • including bipolar components only [5]  

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/ 085 • • • • including field-effect components only [5]  

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/ 088 • • • • • the components being field-effect transistors with insulated gate [5]  

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/ 092 • • • • • • complementary MIS field-effect transistors [5]  

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/ 095 • • • • • the components being Schottky barrier gate field-effect transistors [5]  

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/ 098 • • • • • the components being PN junction gate field-effect transistors [5]  

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/ 10 • • • including a plurality of individual components in a repetitive configuration [2]  

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/ 102 • • • • including bipolar components [5]  

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/ 105 • • • • including field-effect components [5]  

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/ 108 • • • • • Dynamic random access memory structures [5]  

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/ 11 • • • • • Static random access memory structures [5]  

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/ 112 • • • • • Read-only memory structures [5]  

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/ 115 • • • • • • Electrically programmable read-only memories [5]  

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/ 118 • • • • Masterslice integrated circuits [5]  

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/ 12 • • the substrate being other than a semiconductor body, e.g. an insulating body [2]  

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/ 13 • • • combined with thin-film or thick-film passive components [3]  

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/ 14 • including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of a shorter wavelength, or corpuscular radiation of a shorter wavelength, or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H 01 L 31/14; couplings of light guides with optoelectronic elements G 02 B 6/42) [2]  

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/ 142 • • Energy conversion devices [5]  

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/ 144 • • Devices controlled by radiation [5]  

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/ 146 • • • Imager structures [5]  

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/ 148 • • • • Charge coupled imagers [5]  

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/ 15 • including semiconductor components with at least one potential-jump barrier or surface barrier adapted for light emission [2]  

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/ 16 • including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H 01 L 23/38) [2]  

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/ 18 • including components exhibiting superconductivity [2]  

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/ 20 • including piezo-electric components; including electrostrictive components; including magnetostrictive components; including semiconductor components adapted for use as electromechanical transducers (acoustic electromechanical transducers adapted for electrical communication technique H 04 R) [2]  

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/ 22 • including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects [2]  

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/ 24 • including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier [2]  

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/ 26 • including bulk negative resistance effect components [2]  
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