(0)H01L:2/7:
IPC6
SECTION H - ELECTRICITY
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT...
H01L
3/8
<<   >>   H01L021/8256 - H01L023/66  

21
/ 8256 the substrate being a semiconductor, using technologies not covered by one of groups H 01 L 21/822, H 01 L 21/8252 or H 01 L 21/8254 (H 01 L 21/8258 takes precedence) [6]  

21
/ 8258 the substrate being a semiconductor, using a combination of technologies covered by H 01 L 21/822, H 01 L 21/8252, H 01 L 21/8254 or H 01 L 21/8256 [6]  

21
/ 84 the substrate being other than a semiconductor body, e.g. being an insulating body [2,6]  

21
/ 86 the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS [2,6]  

21
/ 90 (transferred to H 01 L 21/768)

21
/ 98 Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H 01 L 21/50 takes precedence; assemblies H 01 L 25/00) [2,5]  
 

23
/ 00 Details of semiconductor or other solid state devices (H 01 L 25/00 takes precedence) [2,5]

Note

 

This group does not cover:

 

-

details of semiconductor bodies or of electrodes of devices provided for in group H 01 L 29/00, which details are covered by that group;
 

-

details peculiar to devices provided for in a single main group of groups H 01 L 31/00 to H 01 L 49/00, which details are covered by those groups. [5]

23
/ 02 Containers; Seals (H 01 L 23/12, H 01 L 23/34, H 01 L 23/48, H 01 L 23/552 take precedence) [2,5]  

23
/ 04 characterised by the shape [2]  

23
/ 043 the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body [5]  

23
/ 045 the other leads having an insulating passage through the base [5]  

23
/ 047 the other leads being parallel to the base [5]  

23
/ 049 the other leads being perpendicular to the base [5]  

23
/ 051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type [5]  

23
/ 053 the container being a hollow construction and having an insulating base as a mounting for the semiconductor body [5]  

23
/ 055 the leads having a passage through the base [5]  

23
/ 057 the leads being parallel to the base [5]  

23
/ 06 characterised by the material of the container or its electrical properties [2]  

23
/ 08 the material being an electrical insulator, e.g. glass [2]  

23
/ 10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container [2]  

23
/ 12 Mountings, e.g. non-detachable insulating substrates [2]  

23
/ 13 characterised by the shape [5]  

23
/ 14 characterised by the material or its electrical properties [2]  

23
/ 15 Ceramic or glass substrates [5]  

23
/ 16 Fillings or auxiliary members in containers, e.g. centering rings (H 01 L 23/42, H 01 L 23/552 take precedence) [2,5]  

23
/ 18 Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device [2]  

Note

 

Group H 01 L 23/26 takes precedence over groups H 01 L 23/20 to H 01 L 23/24. [2]

23
/ 20 gaseous at the normal operating temperature of the device [2]  

23
/ 22 liquid at the normal operating temperature of the device [2]  

23
/ 24 solid or gel, at the normal operating temperature of the device [2]  

23
/ 26 including materials for absorbing or reacting with moisture or other undesired substances [2]  

23
/ 28 Encapsulation, e.g. encapsulating layers, coatings (H 01 L 23/552 takes precedence) [2,5]  

23
/ 29 characterised by the material [5]  

23
/ 31 characterised by the arrangement [5]  

23
/ 32 Holders for supporting the complete device in operation, i.e. detachable fixtures (H 01 L 23/40 takes precedence; connectors in general H 01 R; for printed circuits H 05 K) [2,5]  

23
/ 34 Arrangements for cooling, heating, ventilating or temperature compensation [2,5]  

23
/ 36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks [2]  

23
/ 367 Cooling facilitated by shape of device [5]  

23
/ 373 Cooling facilitated by selection of materials for the device [5]  

23
/ 38 Cooling arrangements using the Peltier effect [2]  

23
/ 40 Mountings or securing means for detachable cooling or heating arrangements [2]  

23
/ 42 Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling (characterised by selection of materials for the device H 01 L 23/373) [2,5]  

23
/ 427 Cooling by change of state, e.g. use of heat pipes [5]  

23
/ 433 Auxiliary members characterised by their shape, e.g. pistons [5]  

23
/ 44 the complete device being wholly immersed in a fluid other than air (H 01 L 23/427 takes precedence) [2,5]  

23
/ 46 involving the transfer of heat by flowing fluids (H 01 L 23/42, H 01 L 23/44 take precedence) [2]  

23
/ 467 by flowing gases, e.g. air [5]  

23
/ 473 by flowing liquids [5]  

23
/ 48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements (in general H 01 R) [2]  

23
/ 482 consisting of lead-in layers inseparably applied to the semiconductor body [5]  

23
/ 485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts [5]  

23
/ 488 consisting of soldered constructions [5]  

23
/ 49 wire-like [5]  

23
/ 492 Bases or plates [5]  

23
/ 495 Lead-frames [5]  

23
/ 498 Leads on insulating substrates [5]  

23
/ 50 for integrated circuit devices (H 01 L 23/482 to H 01 L 23/498 take precedence) [2,5]  

23
/ 52 Arrangements for conducting electric current within the device in operation from one component to another [2]  

23
/ 522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body [5]  

23
/ 525 with adaptable interconnections [5]  

23
/ 528 Layout of the interconnection structure [5]  

23
/ 532 characterised by the materials [5]  

23
/ 535 including internal interconnections, e.g. cross-under constructions [5]  

23
/ 538 the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates (mountings H 01 L 23/12) [5]  

23
/ 544 Marks applied to semiconductor devices, e.g. registration marks, test patterns [5]  

23
/ 552 Protection against radiation, e.g. light [5]  

23
/ 556 against alpha rays [5]  

23
/ 58 Structural electrical arrangements for semiconductor devices not otherwise provided for [5]  

23
/ 60 Protection against electrostatic charges or discharges, e.g. Faraday shields (in general H 05 F) [5]  

23
/ 62 Protection against overcurrent or overload, e.g. fuses, shunts [5]  

23
/ 64 Impedance arrangements [5]  

23
/ 66 High-frequency adaptations [5]  

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