Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices (H 01 L 21/50 takes precedence; assemblies H 01 L 25/00) [2,5]
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00
Details of semiconductor or other solid state devices (H 01 L 25/00 takes precedence) [2,5]
Note
This group does not cover:
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details of semiconductor bodies or of electrodes of devices provided for in group H 01 L 29/00, which details are covered by that group;
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details peculiar to devices provided for in a single main group of groups H 01 L 31/00 to H 01 L 49/00, which details are covered by those groups. [5]
the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body [5]
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045
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the other leads having an insulating passage through the base [5]
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047
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the other leads being parallel to the base [5]
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049
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the other leads being perpendicular to the base [5]
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051
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another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type [5]
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053
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the container being a hollow construction and having an insulating base as a mounting for the semiconductor body [5]
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055
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the leads having a passage through the base [5]
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057
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the leads being parallel to the base [5]
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06
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characterised by the material of the container or its electrical properties [2]
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08
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the material being an electrical insulator, e.g. glass [2]
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10
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characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container [2]
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12
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Mountings, e.g. non-detachable insulating substrates [2]
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13
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characterised by the shape [5]
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14
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characterised by the material or its electrical properties [2]
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15
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Ceramic or glass substrates [5]
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16
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Fillings or auxiliary members in containers, e.g. centering rings (H 01 L 23/42, H 01 L 23/552 take precedence) [2,5]
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18
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Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device [2]
gaseous at the normal operating temperature of the device [2]
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liquid at the normal operating temperature of the device [2]
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24
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solid or gel, at the normal operating temperature of the device [2]
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26
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including materials for absorbing or reacting with moisture or other undesired substances [2]
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28
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Encapsulation, e.g. encapsulating layers, coatings (H 01 L 23/552 takes precedence) [2,5]
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29
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characterised by the material [5]
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31
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characterised by the arrangement [5]
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32
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Holders for supporting the complete device in operation, i.e. detachable fixtures (H 01 L 23/40 takes precedence; connectors in general H 01 R; for printed circuits H 05 K) [2,5]
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34
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Arrangements for cooling, heating, ventilating or temperature compensation [2,5]
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36
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Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks [2]
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367
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Cooling facilitated by shape of device [5]
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373
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Cooling facilitated by selection of materials for the device [5]
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38
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Cooling arrangements using the Peltier effect [2]
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40
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Mountings or securing means for detachable cooling or heating arrangements [2]
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42
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Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling (characterised by selection of materials for the device H 01 L 23/373) [2,5]
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427
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Cooling by change of state, e.g. use of heat pipes [5]
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433
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Auxiliary members characterised by their shape, e.g. pistons [5]
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44
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the complete device being wholly immersed in a fluid other than air (H 01 L 23/427 takes precedence) [2,5]
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46
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involving the transfer of heat by flowing fluids (H 01 L 23/42, H 01 L 23/44 take precedence) [2]
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467
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by flowing gases, e.g. air [5]
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473
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by flowing liquids [5]
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48
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Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements (in general H 01 R) [2]
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482
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consisting of lead-in layers inseparably applied to the semiconductor body [5]
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485
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consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts [5]
Arrangements for conducting electric current within the device in operation from one component to another [2]
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522
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including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body [5]
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525
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with adaptable interconnections [5]
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528
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Layout of the interconnection structure [5]
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532
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characterised by the materials [5]
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535
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including internal interconnections, e.g. cross-under constructions [5]
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538
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the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates (mountings H 01 L 23/12) [5]
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544
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Marks applied to semiconductor devices, e.g. registration marks, test patterns [5]
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552
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Protection against radiation, e.g. light [5]
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556
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against alpha rays [5]
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58
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Structural electrical arrangements for semiconductor devices not otherwise provided for [5]
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60
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Protection against electrostatic charges or discharges, e.g. Faraday shields (in general H 05 F) [5]
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62
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Protection against overcurrent or overload, e.g. fuses, shunts [5]