the devices having semiconductor bodies not provided for in groups H 01 L 21/06, H 01 L 21/16, and H 01 L 21/18 with or without impurities, e.g. doping materials [2]
21
/
36
•
•
•
•
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]
21
/
363
•
•
•
•
•
using physical deposition, e.g. vacuum deposition, sputtering [2]
21
/
365
•
•
•
•
•
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]
21
/
368
•
•
•
•
•
using liquid deposition [2]
21
/
38
•
•
•
•
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions [2]
21
/
383
•
•
•
•
•
using diffusion into, or out of, a solid from or into a gaseous phase [2]
21
/
385
•
•
•
•
•
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]
21
/
388
•
•
•
•
•
using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]
21
/
40
•
•
•
•
Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]
21
/
42
•
•
•
•
Bombardment with radiation [2]
21
/
423
•
•
•
•
•
with high-energy radiation [2]
21
/
425
•
•
•
•
•
•
producing ion implantation (ion-beam tubes for localised treatment H 01 J 37/30) [2]
21
/
426
•
•
•
•
•
•
•
using masks [5]
21
/
428
•
•
•
•
•
•
using electromagnetic radiation, e.g. laser radiation [2]
21
/
44
•
•
•
•
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/36 to H 01 L 21/428 [2]
21
/
441
•
•
•
•
•
Deposition of conductive or insulating materials for electrodes [2]
21
/
443
•
•
•
•
•
•
from a gas or vapour, e.g. condensation [2]
21
/
445
•
•
•
•
•
•
from a liquid, e.g. electrolytic deposition [2]
21
/
447
•
•
•
•
•
involving the application of pressure, e.g. thermo-compression bonding (H 01 L 21/607 takes precedence) [2]
21
/
449
•
•
•
•
•
involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]
21
/
46
•
•
•
•
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/36 to H 01 L 21/428 (manufacture of electrodes thereon H 01 L 21/44) [2]
21
/
461
•
•
•
•
•
to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting [2]
21
/
463
•
•
•
•
•
•
Mechanical treatment, e.g. grinding, ultrasonic treatment [2]
21
/
465
•
•
•
•
•
•
Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H 01 L 21/469) [2]
21
/
467
•
•
•
•
•
•
•
using masks [2]
21
/
469
•
•
•
•
•
•
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H 01 L 21/44; encapsulating layers H 01 L 21/56); After-treatment of these layers [2,5]
composed of oxides or glassy oxides or oxide-based glass [2]
21
/
475
•
•
•
•
•
•
•
using masks [2,5]
21
/
4757
•
•
•
•
•
•
•
After-treatment [5]
21
/
4763
•
•
•
•
•
•
Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H 01 L 21/28) [5]
Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H 01 L 21/06 to H 01 L 21/326 (containers, encapsulations, fillings, mountings per seH 01 L 23/00) [2]
21
/
50
•
•
•
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H 01 L 21/06 to H 01 L 21/326 [2]
21
/
52
•
•
•
•
Mounting semiconductor bodies in containers [2]
21
/
54
•
•
•
•
Providing fillings in containers, e.g. gas fillings [2]
21
/
56
•
•
•
•
Encapsulations, e.g. encapsulating layers, coatings [2]
21
/
58
•
•
•
•
Mounting semiconductor devices on supports [2]
21
/
60
•
•
•
•
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation [2]
21
/
603
•
•
•
•
•
involving the application of pressure, e.g. thermo-compression bonding (H 01 L 21/607 takes precedence) [2]
21
/
607
•
•
•
•
•
involving the application of mechanical vibrations, e.g. ultrasonic vibrations [2]
21
/
62
•
•
the devices having no potential-jump barriers or surface barriers [2]
21
/
64
•
Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H 01 L 31/00 to H 01 L 49/00 [2]
21
/
66
•
Testing or measuring during manufacture or treatment (after manufacture G 01 R 31/26) [2]
21
/
68
•
Apparatus for supporting or positioning components during manufacture, e.g. jigs [2]
21
/
70
•
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof (manufacture of assemblies consisting of preformed electrical components H 05 K 3/00, H 05 K 13/00) [2]
Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections [2]
21
/
76
•
•
•
Making of isolation regions between components [2]
21
/
761
•
•
•
•
PN junctions [6]
21
/
762
•
•
•
•
Dielectric regions [6]
21
/
763
•
•
•
•
Polycrystalline semiconductor regions [6]
21
/
764
•
•
•
•
Air gaps [6]
21
/
765
•
•
•
•
by field-effect [6]
21
/
768
•
•
•
Applying interconnections to be used for carrying current between separate components within a device [6]
21
/
77
•
•
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate [6]
21
/
78
•
•
•
with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H 01 L 21/304) [2,6]
21
/
782
•
•
•
•
to produce devices, each consisting of a single circuit element (H 01 L 21/82 takes precedence) [6]
21
/
784
•
•
•
•
•
the substrate being a semiconductor body [6]
21
/
786
•
•
•
•
•
the substrate being other than a semiconductor body, e.g. insulating body [6]