(0)H01L:0/7:
IPC6
SECTION H - ELECTRICITY
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT...
H01L
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<<   >>   H01L021/00 - H01L021/337  

H 01 L

 SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (conveying systems for semiconductor wafers B 65 G 49/07; use of semiconductor devices for measuring G 01; resistors in general H 01 C; magnets, inductors, transformers H 01 F; capacitors in general H 01 G; electrolytic devices H 01 G 9/00; batteries, accumulators H 01 M; waveguides, resonators, or lines of the waveguide type H 01 P; line connectors, current collectors H 01 R; stimulated-emission devices H 01 S; electromechanical resonators H 03 H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H 04 R; electric light sources in general H 05 B ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H 05 K; use of semiconductor devices in circuits having a particular application, see the subclass for the application) [2]
 

Notes

(1)

 This subclass covers:
 

-

 electric solid state devices which are not covered by any other subclass and details thereof, and includes: semiconductor devices adapted for rectifying, amplifying, oscillating or switching; semiconductor devices sensitive to radiation; electric solid state devices using thermoelectric, superconductive, piezo-electric, electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and integrated circuit devices; [2]
 

-

 photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes and thin-film or thick-film circuits; [2]
 

-

 processes and apparatus adapted for the manufacture or treatment of such devices, except where such processes relate to single-step processes for which provision exists elsewhere. [2]

(2)

 In this subclass, the following terms or expressions are used with the meanings indicated:
 

-

 "solid state body" means the body of material within which, or at the surface of which, the physical effects characteristic of the device occur. In thermoelectric devices, it includes all materials in the current path.
 

Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid state body electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto. An electrode may include several portions and the term includes metallic regions which exert influence on the solid state body through an insulating region (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, only those portions which exert an influence on the solid state body by virtue of their shape, size, or disposition or the material of which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangements for conducting electric current to or from the solid state body" or "interconnections between solid state components formed in or on a common substrate", i.e. leads; [2]
 

-

 "device" means an electric circuit element; where an electric circuit element is one of a plurality of elements formed in or on a common substrate it is referred to as a "component"; [2]
 

-

 "complete device" is a device in its fully assembled state which may or may not require further treatment, e.g. electroforming, before it is ready for use but which does not require the addition of further structural units; [2]
 

-

 "parts" includes all structural units which are included in a complete device; [2]
 

-

 "container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body of the device is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation"; [2]
 

-

 "integrated circuit" is a device where all components, e.g. diodes, resistors, are built up on a common substrate and form the device including interconnections between the components; [2]
 

-

 "assembly" of a device is the building up of the device from its component constructional units and includes the provision of fillings in containers. [2]

(3)

 In this subclass, both the process or apparatus for the manufacture or treatment of a device and the device itself are classified, whenever both of these are described sufficiently to be of interest. [6]

 

 

 
 

 21
/ 00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H 01 L 31/00 to H 01 L 49/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C 23 C, C 30 B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G 03 F) [2]

Note
 

Groups H 01 L 21/70 to H 01 L 21/98 take precedence over groups H 01 L 21/02 to H 01 L 21/68. [2]

21
/ 02 • Manufacture or treatment of semiconductor devices or of parts thereof (characterised by the use of organic materials H 01 L 51/40) [2]  

21
/ 027 • • Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H 01 L 21/18 or H 01 L 21/34 [5]  

21
/ 033 • • • comprising inorganic layers [5]  

21
/ 04 • • the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer [2]  

21
/ 06 • • • the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials [2]  

21
/ 08 • • • • Preparation of the foundation plate [2]  

21
/ 10 • • • • Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination [2]  

21
/ 103 • • • • • Conversion of the selenium or tellurium to the conductive state [2]  

21
/ 105 • • • • • Treatment of the surface of the selenium or tellurium layer after having been made conductive [2]  

21
/ 108 • • • • • Provision of discrete insulating layers, i.e. non-genetic barrier layers [2]  

21
/ 12 • • • • Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate [2]  

21
/ 14 • • • • Treatment of the complete device, e.g. by electroforming to form a barrier [2]  

21
/ 145 • • • • • Ageing [2]  

21
/ 16 • • • the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide [2]  

21
/ 18 • • • the devices having semiconductor bodies comprising unspecified elements or elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials (processes or apparatus for devices whose bodies comprise unspecified elements but clearly not relevant to devices comprising elements of the fourth group or AIIIBV compounds H 01 L 21/06, H 01 L 21/16 or H 01 L 21/34) [2,6]  

21
/ 20 • • • • Deposition of semiconductor materials on a substrate, e.g. epitaxial growth [2]  

21
/ 203 • • • • • using physical deposition, e.g. vacuum deposition, sputtering [2]  

21
/ 205 • • • • • using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition [2]  

21
/ 208 • • • • • using liquid deposition [2]  

21
/ 22 • • • • Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant [2]  

21
/ 223 • • • • • using diffusion into, or out of, a solid from or into a gaseous phase [2]  

21
/ 225 • • • • • using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer [2]  

21
/ 228 • • • • • using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes [2]  

21
/ 24 • • • • Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body [2]  

21
/ 26 • • • • Bombardment with wave or particle radiation (thermal treatment H 01 L 21/324) [2]  

21
/ 261 • • • • • to produce a nuclear reaction transmuting chemical elements [6]  

21
/ 263 • • • • • with high-energy radiation (H 01 L 21/261 takes precedence) [2,6]  

21
/ 265 • • • • • • producing ion implantation (ion-beam tubes for localised treatment H 01 J 37/30) [2]  

21
/ 266 • • • • • • • using masks [5]  

21
/ 268 • • • • • • using electromagnetic radiation, e.g. laser radiation [2]  

21
/ 28 • • • • Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/20 to H 01 L 21/268 [2]  

21
/ 283 • • • • • Deposition of conductive or insulating materials for electrodes [2]  

21
/ 285 • • • • • • from a gas or vapour, e.g. condensation [2]  

21
/ 288 • • • • • • from a liquid, e.g. electrolytic deposition [2]  

21
/ 30 • • • • Treatment of semiconductor bodies using processes or apparatus not provided for in groups H 01 L 21/20 to H 01 L 21/26 (manufacture of electrodes thereon H 01 L 21/28) [2]  

21
/ 301 • • • • • to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H 01 L 21/304) [6]  

21
/ 302 • • • • • to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting [2]  

21
/ 304 • • • • • • Mechanical treatment, e.g. grinding, polishing, cutting [2]  

21
/ 306 • • • • • • Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H 01 L 21/31; after-treatment of insulating layers H 01 L 21/3105) [2]  

21
/ 3063 • • • • • • • Electrolytic etching [6]  

21
/ 3065 • • • • • • • Plasma etching; Reactive-ion etching [6]  

21
/ 308 • • • • • • • using masks (H 01 L 21/3063, H 01 L 21/3065, take precedence) [2,6]  

21
/ 31 • • • • • to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H 01 L 21/28; encapsulating layers H 01 L 21/56); After-treatment of these layers; Selection of materials for these layers [2,5]  

21
/ 3105 • • • • • • After-treatment [5]  

21
/ 311 • • • • • • • Etching the insulating layers [5]  

21
/ 3115 • • • • • • • Doping the insulating layers [5]  

21
/ 312 • • • • • • Organic layers, e.g. photoresist (H 01 L 21/3105, H 01 L 21/32 take precedence) [2,5]  

21
/ 314 • • • • • • Inorganic layers (H 01 L 21/3105, H 01 L 21/32 take precedence) [2,5]  

21
/ 316 • • • • • • • composed of oxides or glassy oxides or oxide-based glass [2]  

21
/ 318 • • • • • • • composed of nitrides [2]  

21
/ 32 • • • • • • using masks [2,5]  

21
/ 3205 • • • • • • Deposition of non-insulating-, e.g. conductive-, resistive-, layers, on insulating layers (arrangements for conducting electric current within the device H 01 L 23/52); After-treatment of these layers (manufacture of electrodes H 01 L 21/28) [5]  

21
/ 321 • • • • • • • After-treatment [5]  

21
/ 3213 • • • • • • • • Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer [6]  

21
/ 3215 • • • • • • • • Doping the layers [5]  

21
/ 322 • • • • • to modify their internal properties, e.g. to produce internal imperfections [2]  

21
/ 324 • • • • • Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H 01 L 21/20 to H 01 L 21/288, H 01 L 21/302 to H 01 L 21/322 take precedence) [2]  

21
/ 326 • • • • • Application of electric currents or fields, e.g. for electroforming (H 01 L 21/20 to H 01 L 21/288, H 01 L 21/302 to H 01 L 21/324 take precedence) [2]  

21
/ 328 • • • • Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors [5]  

21
/ 329 • • • • • the devices comprising one or two electrodes, e.g. diodes [5]  

21
/ 33 • • • • • the devices comprising three or more electrodes [5]  

21
/ 331 • • • • • • Transistors [5]  

21
/ 332 • • • • • • Thyristors [5]  

21
/ 334 • • • • Multistep processes for the manufacture of devices of the unipolar type [5]  

21
/ 335 • • • • • Field-effect transistors [5]  

21
/ 336 • • • • • • with an insulated gate [5]  

21
/ 337 • • • • • • with a PN junction gate [5]  
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