using elements whose operation depends upon chemical change (using electrochemical charge
G 11 C 11/00)
13
/
04
•
using optical elements
13
/
06
•
•
using magneto-optical elements (magneto-optics in general G 02 F) [2]
14
/
00
Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down [5]
15
/
00
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores (in which information is addressed to a specific location
G 11 C 11/00) [2]
using variable threshold transistors, e.g. FAMOS [5]
16
/
06
•
•
Auxiliary circuits, e.g. for writing into memory (in general G 11 C 7/00) [5]
17
/
00
Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (erasable programmable read-only memories G 11 C 16/00; coding, decoding or code conversion, in general H 03 M) [2,5]
17
/
02
•
using magnetic or inductive elements (G 11 C 17/14 takes precedence) [2,5]
using diode elements (G 11 C 17/14 takes precedence) [2,5]
17
/
08
•
using semiconductor devices, e.g. bipolar elements (G 11 C 17/06, G 11 C 17/14 take precedence) [5]
17
/
10
•
•
in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM [5]
17
/
12
•
•
•
using field-effect devices [5]
17
/
14
•
in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM [5]
17
/
16
•
•
using electrically-fusible links [5]
17
/
18
•
•
Auxiliary circuits, e.g. for writing into memory (in general G 11 C 7/00) [5]
19
/
00
Digital stores in which the information is moved stepwise, e.g. shift register (counting chains H 03 K 23/00)
19
/
02
•
using magnetic elements (G 11 C 19/14 takes precedence) [2]
19
/
04
•
•
using cores with one aperture or magnetic loop [2]
19
/
06
•
•
using structures with a number of apertures or magnetic loops, e.g. transfluxors [2]
19
/
08
•
•
using thin films in plane structure [2]
19
/
10
•
•
using thin films on rods; with twistors [2]
19
/
12
•
using non-linear reactive devices in resonant circuits [2]
19
/
14
•
using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements [2]
19
/
18
•
using capacitors as main elements of the stages [2]
19
/
20
•
using discharge tubes (G 11 C 19/14 takes precedence) [2]
19
/
28
•
using semiconductor elements (G 11 C 19/14 takes precedence) [2]
19
/
30
•
using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled [2]
19
/
32
•
using super-conductive elements [2]
21
/
00
Digital stores in which the information circulates (stepwise G 11 C 19/00)
21
/
02
•
using electromechanical delay lines, e.g. using a mercury tank
23
/
00
Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor (storing by actuating contacts G 11 C 11/48)
25
/
00
Digital stores characterised by the use of flowing media; Storage elements therefor
27
/
00
Electric analogue stores, e.g. for storing instantaneous values
27
/
02
•
Sample-and-hold arrangements (G 11 C 27/04 takes precedence; sampling electrical signals, in general H 03 K) [2,4]
27
/
04
•
Shift registers (charge coupled devices per seH 01 L 29/76) [4]
