STATIC STORES (information storage based on relative movement between record carrier and transducer G 11 B; semiconductor devices for storage
H 01 L, e.g. H 01 L 27/108 to H 01 L 27/115; pulse technique in general H 03 K, e.g. electronic switches H 03 K 17/00)
Notes
(1)
This subclass covers devices or arrangements for storage of digital or analogue information:
(i)
in which no relative movement takes place between an information storage element and a transducer;
(ii)
which incorporate a selecting-device for writing-in or reading-out the information into or from the store.
(2)
This subclass does not cover elements not adapted for storage and not provided with such means as referred to in Note (3) below, which elements are classified in the appropriate subclass, e.g. of H 01, H 03 K.
(3)
In this subclass, a storage element is provided with means for writing-in and reading-out at least one item of information.
Arrangements for writing information into, or reading information out from, a digital store (G 11 C 5/00 takes precedence; for stores using transistors G 11 C 11/407, G 11 C 11/413) [2,5]
7
/
02
•
with means for avoiding parasitic signals
7
/
04
•
with means for avoiding disturbances due to temperature effects
7
/
06
•
Adaptations of amplifiers (amplifiers per seH 03 F, H 03 K)
8
/
00
Arrangements for selecting an address in a digital store (for stores using transistors G 11 C 11/407, G 11 C 11/413) [2,5]
8
/
02
•
using selecting matrix [2]
8
/
04
•
using a sequential addressing device, e.g. shift register, counter [5]
11
/
00
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G 11 C 14/00 to G 11 C 21/00 take precedence) [5]
using storage elements having cylindrical form, e.g. rod, wire (G 11 C 11/12, G 11 C 11/14 take precedence) [2]
11
/
06
•
•
using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
11
/
061
•
•
•
using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out [2]
11
/
063
•
•
•
•
bit-organized, such as, 2L/2D-, 3D-organization, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing [2]
11
/
065
•
•
•
•
word-organized, such as 2D-organization, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading [2]
11
/
067
•
•
•
using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out [2]
11
/
08
•
•
using multi-aperture storage elements, e.g. using transfluxors; using plates incorporating several individual multi-aperture storage elements (G 11 C 11/10 takes precedence; using multi-aperture plates in which each individual aperture forms a storage element G 11 C 11/06) [2]
11
/
10
•
•
using multi-axial storage elements
11
/
12
•
•
using tensors; using twistors, i.e. elements in which one axis of magnetisation is twisted
11
/
14
•
•
using thin-film elements
11
/
15
•
•
•
using multiple magnetic layers (G 11 C 11/155 takes precedence) [2]
11
/
155
•
•
•
with cylindrical configuration [2]
11
/
16
•
•
using elements in which the storage effect is based on magnetic spin effect
11
/
18
•
using Hall-effect devices
11
/
19
•
using non-linear reactive devices in resonant circuits [2]
11
/
20
•
•
using parametrons [2]
11
/
21
•
using electric elements [2]
11
/
22
•
•
using ferroelectric elements [2]
11
/
23
•
•
using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (G 11 C 11/22 takes precedence) [2]
11
/
24
•
•
using capacitors (G 11 C 11/22 takes precedence; using a combination of semiconductor devices and capacitors G 11 C 11/34, e.g. G 11 C 11/40) [2,5]
11
/
26
•
•
using discharge tubes [2]
11
/
28
•
•
•
using gas-filled tubes [2]
11
/
30
•
•
•
using vacuum tubes (G 11 C 11/23 takes precedence) [2]
11
/
34
•
•
using semiconductor devices [2]
11
/
36
•
•
•
using diodes, e.g. as threshold elements [2]
11
/
38
•
•
•
•
using tunnel diodes [2]
11
/
39
•
•
•
using thyristors [5]
11
/
40
•
•
•
using transistors [2]
11
/
401
•
•
•
•
forming cells needing refreshing or charge regeneration [5]
11
/
402
•
•
•
•
•
with charge regeneration individual to each memory cell, i.e. internal refresh [5]
11
/
403
•
•
•
•
•
with charge regeneration common to a multiplicity of memory cells, i.e. external refresh [5]
11
/
404
•
•
•
•
•
•
with one charge-transfer gate, e.g. MOS transistor, per cell [5]
11
/
405
•
•
•
•
•
•
with three charge-transfer gates, e.g. MOS transistors, per cell [5]
11
/
406
•
•
•
•
•
Management or control of the refreshing or charge-regeneration cycles [5]
11
/
407
•
•
•
•
•
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing, for memory cells of the field-effect type (in general G 11 C 5/00 to G 11 C 8/00) [5]
11
/
408
•
•
•
•
•
•
Address circuits [5]
11
/
409
•
•
•
•
•
•
Read-write circuits [5]
11
/
41
•
•
•
•
forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger [5]
11
/
411
•
•
•
•
•
using bipolar transistors only [5]
11
/
412
•
•
•
•
•
using field-effect transistors only [5]
11
/
413
•
•
•
•
•
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction (in general G 11 C 5/00 to G 11 C 8/00) [5]
11
/
414
•
•
•
•
•
•
for memory cells of the bipolar type [5]
11
/
415
•
•
•
•
•
•
•
Address circuits [5]
11
/
416
•
•
•
•
•
•
•
Read-write circuits [5]
11
/
417
•
•
•
•
•
•
for memory cells of the field-effect type [5]
11
/
418
•
•
•
•
•
•
•
Address circuits [5]
11
/
419
•
•
•
•
•
•
•
Read-write circuits [5]
11
/
42
•
•
using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
11
/
44
•
•
using super-conductive elements, e.g. cryotron [2]
11
/
46
•
using thermoplastic elements
11
/
48
•
using displaceable coupling elements, e.g. ferromagnetic cores, to produce change between different states of mutual or self-inductance
11
/
50
•
using actuation of electric contacts to store the information (mechanical stores
G 11 C 23/00; switches providing a selected number of consecutive operations of the contacts by a single manual actuation of the operating part H 01 H 41/00)
11
/
52
•
•
using electromagnetic relays
11
/
54
•
using elements simulating biological cells, e.g. neuron
11
/
56
•
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency (counting arrangements comprising multi-stable elements of this type H 03 K 25/00, H 03 K 29/00) [2]
