(0)C30B:0/3:
IPC6
SECTION C - CHEMISTRY; METALLURGY
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF...
C30B
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C 30

CRYSTAL GROWTH (separation by crystallisation in general B 01 D 9/00) [3]

C 30 B

SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B 01 J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C 22 B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B 22 D; working of plastics B 29; modifying the physical structure of metals or alloys C 21 D, C 22 F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H 01 L); APPARATUS THEREFOR [3]
 

Notes

(1)

In this subclass, the following expressions are used with the meaning indicated:
 

-

"single crystal" includes also twin crystals and a predominantly single crystal product; [3]
 

-

"homogeneous polycrystalline material" means a material with crystal particles, all of which have the same chemical composition; [5]
 

-

"defined structure" means the structure of a material with grains which are oriented in a preferential way or have larger dimensions than normally obtained. [5]

(2)

In this subclass:
 

-

the preparation of single crystals or a homogeneous polycrystalline material with defined structure of particular materials or shapes is classified in the group for the process as well as in group C 30 B 29/00; [3]
 

-

an apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group C 30 B 35/00. [3]

 

 

 

Single-crystal growth from solids or gels [3]

 

1
/ 00 Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C 30 B 3/00; under a protective fluid C 30 B 27/00) [3]

1
/ 02 by thermal treatment, e.g. strain annealing (C 30 B 1/12 takes precedence) [3]  

1
/ 04 Isothermal recrystallisation [3]  

1
/ 06 Recrystallisation under a temperature gradient [3]  

1
/ 08 Zone recrystallisation [3]  

1
/ 10 by solid state reactions or multi-phase diffusion [3]  

1
/ 12 by pressure treatment during the growth [3]  
 

3
/ 00 Unidirectional demixing of eutectoid materials [3]
 

5
/ 00 Single-crystal growth from gels (under a protective fluid C 30 B 27/00) [3]

5
/ 02 with addition of doping materials [3]  

Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [3]

 

7
/ 00 Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C 30 B 9/00; by normal or gradient freezing C 30 B 11/00; under a protective fluid C 30 B 27/00) [3]

7
/ 02 by evaporation of the solvent [3]  

7
/ 04 using aqueous solvents [3]  

7
/ 06 using non-aqueous solvents [3]  

7
/ 08 by cooling of the solution [3]  

7
/ 10 by application of pressure, e.g. hydrothermal processes [3]  

7
/ 12 by electrolysis [3]  

7
/ 14 the crystallising materials being formed by chemical reactions in the solution [3]  
 

9
/ 00 Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C 30 B 11/00; by zone-melting C 30 B 13/00; by crystal pulling C 30 B 15/00 ; on immersed seed crystal C 30 B 17/00; by liquid phase epitaxial growth C 30 B 19/00; under a protective fluid C 30 B 27/00) [3]

9
/ 02 by evaporation of the molten solvent [3]  

9
/ 04 by cooling of the solution [3]  

9
/ 06 using as solvent a component of the crystal composition [3]  

9
/ 08 using other solvents [3]  

9
/ 10 Metal solvents [3]  

9
/ 12 Salt solvents, e.g. flux growth [3]  

9
/ 14 by electrolysis [3]  

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